VRRM
IF
=
=
6500 V
50 A
Fast-Diode Die
5SLX 12M6500
x
Die size: 13.6 13.6 mm
Doc. No. 5SYA1666-01 July 07
· Fast and soft reverse recovery
· Low losses
· Large SOA
· Passivation: SIPOS and Silicon Nitride plus Polyimide
1)
Maximum rated values
Parameter
Symbol Conditions
min max Unit
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
VRRM
IF
6500
50
V
A
Tvj ³ 25 °C
IFRM
Tvj
Limited by Tvjmax
100
125
A
-40
°C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
2)
Diode characteristic values
Parameter
Symbol Conditions
min
typ max Unit
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
3.2
3.4
20
V
V
Continuous forward voltage
VF
IR
IF = 50 A
µA
mA
A
Continuous reverse current
Peak reverse recovery current
Recovered charge
VR = 6500 V
3
6
70
Irr
80
A
IF = 50 A,
65
µC
µC
ns
ns
mJ
mJ
VR = 3600 V,
di/dt = 230 A/µs,
Ls = 3400 nH,
Inductive load,
Switch:
Qrr
trr
100
1700
2250
100
180
Reverse recovery time
2x 5SMX12M6500
Reverse recovery energy
Erec
2)
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
