VRRM
IF
=
=
1700 V
150 A
Fast-Diode Die
5SLX 12K1711
x
Die size: 11.9 11.9 mm
Doc. No. 5SYA1662-01 Feb. 05
· Fast and soft reverse-recovery
· Low losses
· High SOA
· Passivation: SIPOS Nitride plus Polyimide
1)
Maximum rated values
Parameter
Symbol Conditions
min max Unit
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
VRRM
IF
1700
150
300
125
V
A
IFRM
Tvj
Limited by Tvjmax
A
-40
°C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
2)
Diode characteristic values
Parameter
Symbol Conditions
min
Tvj = 25 °C 1.4
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
typ max Unit
1.65 2.0
1.7
V
V
Continuous forward voltage
VF
IR
IF = 150 A
100
3
µA
mA
A
Continuous reverse current
Peak reverse recovery current
Recovered charge
VR = 1700 V
118
146
43
Irr
A
IF = 150 A,
µC
µC
ns
ns
mJ
mJ
VR = 900 V,
Qrr
trr
di/dt = 800 A/µs,
Ls = 800 nH,
Inductive load,
Switch:
73
460
660
32
Reverse recovery time
2x 5SMX12K1701
Reverse recovery energy
Erec
53
2)
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
