VRRM
IF
=
=
2500 V
100 A
Fast-Diode Die
5SLX 12L2510
x
Die size: 12.4 12.4 mm
Doc. No. 5SYA1664-02 Feb. 05
· Fast and soft reverse-recovery
· Low losses
· High SOA
· Passivation: SIPOS Nitride plus Polyimide
1)
Maximum rated values
Parameter
Symbol Conditions
min max Unit
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
VRRM
IF
2500
100
200
125
V
A
IFRM
Tvj
Limited by Tvjmax
A
-40
°C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
2)
Diode characteristic values
Parameter
Symbol Conditions
min
Tvj = 25 °C 1.4
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
typ max Unit
1.75 2.0
1.8
V
V
Continuous forward voltage
VF
IR
IF = 100 A
1.5
µA
mA
A
Continuous reverse current
Peak reverse recovery current
Recovered charge
VR = 2500 V
2.5
92
7
Irr
115
57
A
IF = 100 A,
µC
µC
ns
ns
mJ
mJ
VR = 1250 V,
di/dt = 440 A/µs,
Ls = 1200 nH,
Inductive load,
Switch:
Qrr
trr
98
900
1150
54
Reverse recovery time
2x 5SMX12L2510
Reverse recovery energy
Erec
92
2)
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
