Advanced Technical Information
IC25
VCES
= 18 A
= 1200 V
IGBT Module
Sixpack in ECO-PAC 2
VWI 15-12P1
VCE(sat)typ. = 2.3 V
S9
N 9
R 5
L9
N 5
X18
W 14
A5
D 5
H 5
A1
F 3
C 1
K10
G 1
Features
IGBTs
• NPT IGBT's
Symbol
VCES
Conditions
Maximum Ratings
- positive temperature coefficient of
saturation voltage
- fast switching
TVJ = 25°C to 150°C
1200
V
V
±
VGES
20
• FRED diodes
- fast reverse recovery
- low forward voltage
IC25
IC80
TC = 25°C
TC = 80°C
18
14
A
A
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
ICM
VCEK
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
20
VCES
A
µs
W
tSC
(SCSOA)
VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
non-repetitive
10
TypicalApplications
Ptot
TC = 25°C
90
• AC drives
• power supplies with power factor
correction
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VCE(sat)
IC = 10 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.3
2.7
2.7
V
V
VGE(th)
ICES
IC = 0.4 mA; VGE = VCE
4.5
6.5
V
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.5 mA
mA
0.8
±
IGES
VCE = 0 V; VGE
=
20 V
200 nA
td(on)
tr
td(off)
tf
Eon
Eoff
50
40
290
60
1.2
1.1
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 10 A
600
45
pF
nC
RthJC
RthJH
(per IGBT)
(per IGBT) with heatsink compound
1.4 K/W
K/W
2.7
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
1 - 2
IXYS Semiconductor GmbH
IXYS Corporation
www.ixys.net
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
