VWI 20-06P1
IC25
VCES
= 19 A
= 600 V
IGBT Module
Sixpack in ECO-PAC 2
VCE(sat)typ. = 1.9 V
S9
K12
Preliminary data
N 9
X18
NTC
J13
L9
N 5
R 5
W 14
A5
D 5
H 5
C 1
K10
A1
Pinarangementseeoutlines
F 3
G 1
Features
IGBTs
• NPT IGBT's
Symbol
VCES
Conditions
Maximum Ratings
- positive temperature coefficient of
saturation voltage
- fast switching
TVJ = 25°C to 150°C
600
V
V
±
VGES
20
• FRED diodes
- fast reverse recovery
- low forward voltage
IC25
IC80
TC = 25°C
TC = 80°C
19
14
A
A
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
ICM
VCEK
VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
20
VCES
A
µs
W
tSC
(SCSOA)
VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C
non-repetitive
10
73
TypicalApplications
Ptot
TC = 25°C
• AC drives
• power supplies with power factor
correction
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VCE(sat)
IC = 10 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
1.9
2.2
2.4
V
V
VGE(th)
ICES
IC = 0.35 mA; VGE = VCE
4.5
6.5
V
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.6 mA
mA
2.7
±
IGES
VCE = 0 V; VGE
=
20 V
100 nA
td(on)
tr
td(off)
tf
Eon
Eoff
35
35
230
30
0.4
0.3
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 10 A
VGE = ±15 V; RG = 82 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 10 A
600
39
pF
nC
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
1.7 K/W
K/W
3.4
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
1 - 5
IXYS Semiconductor GmbH
IXYS Corporation
www.ixys.net
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
