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PXAC201602FC

型号:

PXAC201602FC

品牌:

CREE[ CREE, INC ]

页数:

9 页

PDF大小:

529 K

PXAC201602FC  
Thermally-Enhanced High Power RF LDMOS FET  
140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz  
Description  
The PXAC201602FC is a 140-watt LDMOS FET for use in multi-  
standard cellular power amplifier applications in the 1880 to 1920  
MHz and 2010 to 2025 MHz frequency bands. It features input and  
output matching, and a thermally-enhanced package with earless  
flange.Manufactured withWolfspeed's advanced LDMOS process, this  
device provides excellent thermal performance and superior reliability.  
PXAC201602FC  
Package H-37248-4  
Features  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz  
•ꢀ Asymmetric Doherty design  
3GPP WCDMA signal:  
10 dB PAR, 3.84 MHz BW  
- Main: 55 W Typ (P  
- Peak: 85 W Typ (P  
)
)
1dB  
1dB  
24  
20  
16  
12  
8
60  
40  
20  
0
•ꢀ Broadband internal matching  
•ꢀ Pulsed CW performance, 1960 MHz, 28 V  
Efficiency  
- Output power at P  
- Gain = 18 dB  
= 100 W  
1dB  
Gain  
- Efficiency = 55%  
•ꢀ Capable of handling 10:1 VSWR @ 28 V, 140 W  
(CW) output power  
PAR @ 0.01% CCDF  
-20  
-40  
-60  
•ꢀ Integrated ESD protection  
•ꢀ Human Body Model Class 1C (per JESD22-A114)  
•ꢀ Low thermal resistance  
4
c201602fc-gr1a  
•ꢀ Pb-free and RoHS compliant  
0
25  
30  
35  
40  
45  
50  
•ꢀ Can be operated with I  
of up to 700 mA  
DQ  
(not to exceed maximum ratings limits)  
Average Output Power (dBm)  
RF Specifications  
Single-carrier WCDMA Characteristics (tested in Wolfspeed Doherty test fixture)  
= 28 V, V = 1.4 V, I = 360 mA, P = 22.5 W average, ƒ = 2025 MHz, 3GPP WCDMA signal, channel band-  
V
DD  
GS(PEAꢀ)  
DQ  
OUT  
width = 3.84 MHz, 10 dB PAR @0.01% CCDF.  
Characteristic  
Symbol  
Min  
16.5  
41  
Typ  
17.7  
44  
Max  
Unit  
dB  
Gain  
G
ps  
Drain Efficiency  
hD  
%
Adjacent Channel Power Ratio  
ACPR  
OPAR  
OPAR  
–28  
–26  
dBc  
dB  
Output PAR @ 0.01% CCDF 1880 MHz  
Output PAR @ 0.01% CCDF 2025 MHz  
7.0  
7.8  
dB  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Rev. 05, 2018-07-02  
4600 Silicon Drive  
|
Durham, NC 27703  
|
www.wolfspeed.com  
PXAC201602FC  
2
DC Characteristics  
Characteristic  
Conditions  
Symbol  
Min  
65  
Typ  
Max  
Unit  
V
Drain-source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V
(BR)DSS  
DS  
V
V
= 28 V, V = 0 V  
I
I
1.0  
10.0  
1.0  
µA  
µA  
µA  
W
DS  
DS  
GS  
DSS  
DSS  
GSS  
= 63 V, V = 0 V  
GS  
Gate Leakage Current  
V
GS  
= 10 V, V = 0 V  
DS  
I
On-state Resistance  
(main)  
(peak)  
V
GS  
= 10 V, V = 0.1 V  
DS  
R
0.175  
0.175  
2.71  
1.2  
DS(on)  
DS(on)  
V
GS  
= 10 V, V = 0.1 V  
DS  
R
W
Operating Gate Voltage (main)  
(peak)  
V
DS  
= 28 V, I  
= 360 mA  
= 0 A  
V
GS  
2.5  
0.9  
2.8  
1.5  
V
DQ  
V
= 1.2 V, I  
V
GS  
V
DS  
DQ  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
Operating Voltage  
V
DSS  
V
–6 to +10  
0 to +32  
225  
V
GS  
DD  
V
V
Junction Temperature  
Storage Temperature Range  
T
J
°C  
T
STG  
–65 to +150  
0.48  
°C  
Thermal Resistance (Doherty, T  
= 70°C, 100 W CW)  
R
°C/W  
CASE  
JC  
q
Ordering Information  
Type and Version  
Order Code  
Package Description  
Shipping  
PXAC201602FC V1 R0  
PXAC201602FC-V1-R0  
H-37248-4, ceramic open-cavity, earless Tape & Reel, 50 pcs  
H-37248-4, ceramic open-cavity, earless Tape & Reel, 250 pcs  
PXAC201602FC V1 R250 PXAC201602FC-V1-R250  
Rev. 05, 2018-07-02  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
PXAC201602FC  
3
Typical Performance (data taken in a reference test fixture)  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 360 mA, ƒ = 2025 MHz  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz and  
2025 MHz. 3GPP WCDMA signal,  
10 dB PAR, 3.84 MHz BW  
3GPP WCDMA signal:  
10 dB PAR, 3.84 MHz BW  
24  
20  
16  
12  
8
60  
40  
20  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
60  
50  
40  
30  
20  
10  
0
Efficiency  
ACP Up  
ACP Low  
Gain  
PAR @ 0.01% CCDF  
-20  
-40  
1880 MHz  
2025 MHz  
4
Efficiency  
35  
0
c201602fc-gr1b -60  
c201602fc-gr2  
25  
30  
35  
40  
45  
50  
25  
30  
40  
45  
50  
Average Output Power (dBm)  
Average Output Power (dBm)  
Single-carrier WCDMA Broadband  
Performance  
VDD = 28 V, IDQ = 360 mA, POUT = 43.5 dBm,  
3GPP WCDMA signal, 10 dB PAR  
Single-carrier WCDMA Broadband  
Performance  
VDD = 28 V, IDQ = 360 mA, POUT = 43.5 dBm,  
3GPP WCDMA signal, 10 dB PAR  
20  
18  
16  
14  
12  
70  
60  
50  
40  
30  
-15  
-20  
-25  
-30  
-5  
-10  
-15  
-20  
-25  
-30  
-35  
Return Loss  
ACP Up  
Gain  
Efficiency  
c201602fc-gr3  
c201602fc-gr4  
1650  
1750  
1850  
1950  
2050  
2150  
1650  
1750  
1850  
1950  
2050  
2150  
Frequency (MHz)  
Frequency (MHz)  
Rev. 05, 2018-07-02  
4600 Silicon Drive  
|
Durham, NC 27703 | www.wolfspeed.com  
PXAC201602FC  
4
Typical Performance (cont.)  
CW Performance  
VDD = 28 V, IDQ = 360 mA  
CW Performance at selected VDD  
IDQ = 360 mA, ƒ = 1880 MHz  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
35  
70  
60  
50  
40  
30  
20  
10  
0
Efficiency  
Efficiency  
30  
25  
20  
15  
10  
5
Gain  
Gain  
24 V  
28 V  
32 V  
1880 MHz  
2025 MHz  
c201602fc-gr5  
0
0
c201602fc-gr6a  
25  
30  
35  
40  
45  
50  
55  
25  
30  
35  
40  
45  
50  
55  
Output Power (dBm)  
Output Power (dBm)  
CW Performance at selected VDD  
Small Signal CW Performance  
IDQ = 360 mA, ƒ = 2025 MHz  
VDD = 28 V, IDQ = 360 mA  
35  
70  
22  
20  
18  
16  
14  
12  
10  
0
30  
25  
20  
15  
10  
5
60  
50  
40  
30  
20  
10  
0
IRL  
Efficiency  
-5  
-10  
-15  
-20  
-25  
-30  
Gain  
Gain  
24 V  
28 V  
32 V  
c201602fc-gr6b  
0
c201602fc-gr7  
25  
30  
35  
40  
45  
50  
55  
1750  
1850  
1950  
2050  
2150  
Frequency (MHz)  
Output Power (dBm)  
Rev. 05, 2018-07-02  
4600 Silicon Drive  
|
Durham, NC 27703  
|
www.wolfspeed.com  
PXAC201602FC  
5
Load Pull Performance  
Z Source  
Z Load  
D1  
S
G1  
G2  
D2  
Main side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 360 mA  
P
1dB  
Class AB  
Max Output Power  
Max PAE  
Freq  
[MHz]  
Zs  
[W]  
Zl  
[W]  
Gain  
[dB]  
P
[dBm]  
P
[W]  
PAE  
[%]  
Zl  
[W]  
Gain  
[dB]  
P
[dBm]  
P
OUT  
[W]  
PAE  
[%]  
OUT  
OUT  
OUT  
1880  
1900  
1920  
3.88 – j12.84  
5.30 – j12.89  
5.84 – j14.94  
3.96 – j4.18  
4.14 – j4.36  
4.13 – j4.48  
3.84 – j4.53  
3.99 – j4.73  
20.01  
20.21  
20.33  
20.31  
20.4  
48.39  
48.1  
69.02  
64.57  
67.92  
68.55  
65.16  
54.18  
53.31  
55.15  
55.74  
54.0.3  
7.54 – j1.33  
7.70 – j1.56  
7.03 – j0.76  
5.79 – j0.62  
5.26 – j0.81  
22.43  
22.38  
22.6  
46.72  
46.36  
46.41  
46.22  
46.17  
46.99  
43.25  
43.75  
41.88  
41.40  
65.35  
61.53  
63.54  
64.2  
48.32  
48.36  
48.14  
2010  
2025  
11.80 – j17.15  
12.09 – j16.26  
22.76  
22.7  
62.49  
Peak side pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 540 mA  
P
1dB  
Class AB  
Max Output Power  
Max PAE  
Freq  
[MHz]  
Zs  
[W]  
Zl  
[W]  
Gain  
[dB]  
P
P
[W]  
PAE  
[%]  
Zl  
[W]  
Gain  
[dB]  
P
P
OUT  
[W]  
PAE  
[%]  
OUT  
OUT  
OUT  
[dBm]  
50.31  
49.97  
50.07  
50.19  
50.09  
[dBm]  
48.15  
48.47  
48.54  
48.61  
48.26  
1880  
1900  
1920  
2010  
2025  
4.62 – j9.02  
5.10 – j8.97  
6.65 – j8.28  
10.61 – j5.85  
12.35 – j5.04  
2.53 – j4.95  
2.65 – j4.91  
2.587 – j5.03  
2.48 – j5.17  
2.48 – j5.64  
19.44  
19.87  
19.82  
20.19  
20.34  
107.40  
99.31  
54.66  
53.40  
53.76  
53.45  
52.31  
5.39 – j2.83  
4.50 – j3.28  
4.31 – j3.12  
3.80 – j3.47  
3.83 – j3.38  
22.15  
21.90  
21.93  
22.46  
22.70  
65.31  
70.31  
71.45  
72.61  
66.99  
64.38  
61.18  
62.86  
63.49  
61.23  
101.62  
104.47  
102.09  
Reference Circuit, tuned for 1800 – 2200 MHz  
DUT  
Reference Circuit Part No. LTA/PXAC201602FC V1  
PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, ε = 3.66  
Find Gerber files for this reference fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF)  
PXAC201602FC V1  
r
Rev. 05, 2018-07-02  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
PXAC201602FC  
6
Reference Circuit (cont.)  
RO4350, .020 (60)  
RO43
(61)  
C218  
C110  
VGG  
C104  
VDD  
C214 C219  
C215  
C108  
C101  
C216  
C213  
R101  
C102  
C103  
C207  
C217  
C211  
C206  
C205  
C105  
RF_IN  
RF_OUT  
S1  
C210  
C208  
C209  
R102  
C107  
R103  
VDD  
C106  
VGG  
C109  
C204  
C201  
C212  
C202  
C203  
PXAC201602FC_OUT_01  
PXAC201602FC_IN_01  
b
2 0 1 6 0 2 f c _ c d _ 2 0 1 4 - 0 3 - 1 1  
Reference circuit assembly diagram (not to scale)  
Assembly Information  
Component  
Description  
Suggested Manufacturer  
P/N  
Input  
C101, C104, C106, C107  
Chip capacitor, 18 pF  
Chip capacitor, 0.4 pF  
Chip capacitor, 1.6 pF  
Chip capacitor, 2.4 pF  
Chip capacitor, 0.3 pF  
Capacitor, 10 µF  
ATC  
ATC800A180JT250T  
ATC600F0R4BT  
ATC600F1R6BT  
ATC800A2R4BT250T  
ATC600F0R3BT  
UMꢀ325C7106MM-T  
ERJ-3GEYJ100V  
C16A50Z4  
C102  
ATC  
C103  
ATC  
C105  
ATC  
C108  
ATC  
C109, C110  
R101, R102  
R103  
Taiyo Yuden  
Resistor, 10 Ohm  
Panasonic Electronic Components  
Resistor, 50 Ohm  
Anaren  
Anaren  
S1  
Directional coupler  
X3C21P1-04S  
Rev. 05, 2018-07-02  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
PXAC201602FC  
7
Reference Circuit (cont.)  
Assembly Information (cont.)  
Component  
Output  
Description  
Suggested Manufacturer  
P/N  
C201, C202, C204, C206,  
C208, C214, C216, C219  
Capacitor, 10 µF  
Taiyo Yuden  
UMꢀ325C7106MM-T  
C203, C218  
Capacitor, 220 µF, 50 V  
Chip capacitor, 18 pF  
Cornell Dubilier Electronics (CDE)  
ATC  
Sꢀ221M050ST  
C205, C210, C211, C212,  
C215  
ATC800A180JT250T  
C207  
C209  
C213  
C217  
Chip capacitor, 1.5 pF  
Chip capacitor, 2.4 pF  
Chip capacitor, 1.2 pF  
Chip capacitor, 2.2 pF  
ATC  
ATC  
ATC  
ATC  
ATC600F1R5BT  
ATC800A2R4BT250T  
ATC600F1R2BT  
ATC800A2R2BT250T  
Pinout Diagram (top view)  
S
Main  
Peak  
Pin  
D1  
D2  
G1  
G2  
S
Description  
D1  
D2  
Drain device 1 (main)  
Drain device 2 (peak)  
Gate device 1 (main)  
Gate device 2 (peak)  
Source (flange)  
H-37248-4_pd_10-10-2012  
G1  
G2  
Rev. 05, 2018-07-02  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
PXAC201602FC  
8
Package Outline Specifications  
Package H-37248-4  
(8.89  
[.350])  
(5.08  
[.200])  
2X 45° X 2.72  
[45° X .107]  
C
L
+0.13  
-0.38  
4X R0.76  
2X 4.83±0.51  
[.190±0.020]  
D1  
D2  
+0.005  
-0.015  
R.030  
[
]
FLANGE 9.78  
[.385]  
LID 9.40  
[.370]  
19.43±0.51  
[.765±0.020]  
C
L
G1  
G2  
4X 3.81  
[.150]  
2X 12.70  
[.500]  
SPH 1.57  
[.062]  
19.81±0.20  
[.780±0.008]  
1.02  
[.040]  
H-37248-4_po_02_01-09-2013  
3.76±0.25  
[.148±0.010]  
C
L
20.57  
[.810]  
S
Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances 0.127 [.005].  
4. Pins: D1, D2 – drain, S (flange) – source, G1, G2 – gate.  
5. Lead thickness: 0.10 +0.076/–0.025 [.004 +.003/–.001].  
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].  
Rev. 05, 2018-07-02  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
PXAC201602FC  
9
Revision History  
01  
2014-02-21  
Advance  
Advance  
All  
2
New product, proposed only  
01.1  
2014-02-25  
Added thermal resistance information  
Data Sheet now represents production-released product specificaitons, including reference  
circuit and performance information  
02  
2014-03-14  
Production  
All  
03  
2015-05-13  
2015-05-31  
2016-07-19  
2018-07-02  
Porduction  
Production  
Production  
Production  
1
Change to RF Test Specfications  
04  
1, 2  
1
Revised condition for RF test specfications, updated ordering code  
Added features information  
04.1  
05  
All  
Converted to Wolfspeed Data Sheet  
For more information, please contact:  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
www.wolfspeed.com/RF  
Sales Contact  
RFSales@wolfspeed.com  
RF Product Marketing Contact  
RFMarketing@wolfspeed.com  
919.407.7816  
Notes  
Disclaimer  
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet  
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights  
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-  
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for  
information purposes only. These values can and do vary in different applications and actual performance can vary over  
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products  
are not designed, intended or authorized for use as components in applications intended for surgical implant into the  
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or  
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.  
Rev. 05, 2018-07-02  
www.wolfspeed.com  
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