PXAC201602FC
Thermally-Enhanced High Power RF LDMOS FET
140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz
Description
The PXAC201602FC is a 140-watt LDMOS FET for use in multi-
standard cellular power amplifier applications in the 1880 to 1920
MHz and 2010 to 2025 MHz frequency bands. It features input and
output matching, and a thermally-enhanced package with earless
flange.Manufactured withWolfspeed's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PXAC201602FC
Package H-37248-4
Features
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz
•ꢀ Asymmetric Doherty design
3GPP WCDMA signal:
10 dB PAR, 3.84 MHz BW
- Main: 55 W Typ (P
- Peak: 85 W Typ (P
)
)
1dB
1dB
24
20
16
12
8
60
40
20
0
•ꢀ Broadband internal matching
•ꢀ Pulsed CW performance, 1960 MHz, 28 V
Efficiency
- Output power at P
- Gain = 18 dB
= 100 W
1dB
Gain
- Efficiency = 55%
•ꢀ Capable of handling 10:1 VSWR @ 28 V, 140 W
(CW) output power
PAR @ 0.01% CCDF
-20
-40
-60
•ꢀ Integrated ESD protection
•ꢀ Human Body Model Class 1C (per JESD22-A114)
•ꢀ Low thermal resistance
4
c201602fc-gr1a
•ꢀ Pb-free and RoHS compliant
0
25
30
35
40
45
50
•ꢀ Can be operated with I
of up to 700 mA
DQ
(not to exceed maximum ratings limits)
Average Output Power (dBm)
RF Specifications
Single-carrier WCDMA Characteristics (tested in Wolfspeed Doherty test fixture)
= 28 V, V = 1.4 V, I = 360 mA, P = 22.5 W average, ƒ = 2025 MHz, 3GPP WCDMA signal, channel band-
V
DD
GS(PEAꢀ)
DQ
OUT
width = 3.84 MHz, 10 dB PAR @0.01% CCDF.
Characteristic
Symbol
Min
16.5
41
Typ
17.7
44
Max
—
Unit
dB
Gain
G
ps
Drain Efficiency
hD
—
%
Adjacent Channel Power Ratio
ACPR
OPAR
OPAR
—
–28
—
–26
—
dBc
dB
Output PAR @ 0.01% CCDF 1880 MHz
Output PAR @ 0.01% CCDF 2025 MHz
7.0
7.8
—
—
dB
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 05, 2018-07-02
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com