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PXAC180602MD

型号：

PXAC180602MD

品牌：

INFINEON[ Infineon ]

页数：

10 页

PDF大小：

1270 K

下载PDF手册
PXAC180602MD  
Thermally-Enhanced High Power RF LDMOS FET  
60 W, 28 V, 1805 – 1880 MHz  
Description  
The PXAC180602MD is a 60-watt LDMOS FET with an asym-  
metrical design intended for use in multi-standard cellular power  
amplifier applications in the 1805 to 1880 MHz frequency band.  
Features include dual-path design, input matching, high gain and  
thermally-enhanced package with earless flanges. Manufactured  
with Infineon's advanced LDMOS process, this device provides  
excellent thermal performance and superior reliability.  
PXAC180602MD  
Package PG-HB1DSO-4-1  
Features  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz  
3GPP WCDMA signal,  
•ꢀ Broadband internal input and output matching  
•ꢀ Asymmetric Doherty design  
- Main : P1dB = 20 W Typ  
- Peak : P1dB = 40 W Typ  
PAR = 10 dB, 3.84 MHz BW  
24  
20  
16  
12  
8
75  
50  
25  
0
•ꢀ Typical Pulsed CW performance, 1880 MHz,  
28 V, 160 µs pulse width, 10% duty cycle, class AB,  
Doherty Configuration  
Efficiency  
- Output power at P  
- Efficiency = 58%  
- Gain at P  
= 10 W  
1dB  
Gain  
= 19 dB  
3dB  
•ꢀ Integrated ESD protection  
•ꢀ Human Body Model, Class 1B (per ANSI/ESDA/  
-25  
-50  
-75  
PAR @ 0.01% CCDF  
JEDEC JS-001)  
4
•ꢀ Low thermal resistance  
•ꢀ Pb-free and RoHS compliant  
0
pxac180602md_g1  
27  
31  
35  
39  
43  
47  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon production Doherty test fixture)  
= 28 V, I = 80 mA, P = 8.9 W avg, V = 160 mA–1.3 V, ƒ = 1840 MHz, 3GPP signal, channel bandwidth = 3.84  
V
DD  
DQ  
OUT  
GSPK  
1
MHz, peak/average = 10 dB @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
16.5  
51.0  
—
Typ  
17.7  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
Adjacent Channel Power Ratio  
hD  
54.5  
—
%
ACPR  
–27.6  
–25  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 10  
Rev. 02.1, 2015-06-18  
PXAC180602MD  
DC Characteristics (each side)  
Characteristic  
Conditions  
Symbol  
Min  
65  
—
Typ  
—
Max  
—
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V(  
BR)DSS  
DS  
V
= 28 V, V = 0 V  
I
I
—
1
µA  
µA  
W
DS  
DS  
GS  
DSS  
V
= 63 V, V = 0 V  
—
—
10  
—
GS  
DSS  
On-State Resistance (main)  
On-State Resistance (peak)  
Operating Gate Voltage (main)  
Operating Gate Voltage (peak)  
Gate Leakage Current  
V
GS  
= 10 V, V = 0.1 V  
R
R
—
0.76  
0.36  
2.6  
1.4  
—
DS  
DS(on)  
DS(on)  
V
GS  
= 10 V, V = 0.1 V  
—
—
W
DS  
V
= 26 V, I  
= 26 V, I  
= 80 mA  
= 0 mA  
V
GS  
2.3  
0.8  
—
3.0  
1.8  
1
V
DS  
DS  
DQ  
DQ  
V
V
GS  
V
V
GS  
= 10 V, V = 0 V  
I
GSS  
µA  
DS  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Operating Voltage  
V
DSS  
V
–6 to +10  
0 to +32  
225  
V
GS  
DD  
V
V
Junction Temperature  
Storage Temperature Range  
T
°C  
J
T
STG  
–65 to +150  
2.4  
°C  
Thermal Resistance (Doherty, T  
= 70°C, 55 W CW)  
R
qJC  
°C/W  
CASE  
Ordering Information  
Type and Version  
Order Code  
Package Description  
Shipping  
PXAC180602MD V1 R500  
PXAC180602MDV1R500XUMA1  
PG-HB1DSO-4-1  
Tape & Reel, 500 pcs  
Data Sheet  
2 of 10  
Rev. 02.1, 2015-06-18  
PXAC180602MD  
Typical Performance (data taken in a production Doherty test fixture)  
Single-carrier WCDMA Broadband  
Performance  
Single-carrier WCDMA Broadband  
Performance  
VDD = 28 V, IDQ = 80 mA, POUT = 39.5dBm,  
3GPP WCDMA signal, PAR = 10 dB  
VDD = 28 V, IDQ = 80 mA, POUT = 39.5dBm,  
3GPP WCDMA signal, PAR = 10 dB  
20  
19  
18  
17  
16  
15  
60  
55  
50  
45  
40  
35  
-10  
-15  
-20  
-25  
-30  
-35  
-5  
IRL  
Efficiency  
-10  
-15  
-20  
-25  
-30  
Gain  
ACP Up  
pxac180602md_g3  
pxac180602md_g4  
1700 1750 1800 1850 1900 1950 2000  
1700 1750 1800 1850 1900 1950 2000  
Frequency (MHz)  
Frequency (MHz)  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz,  
3GPP WCDMA signal, PAR = 10 dB,  
BW = 3.84 MHz  
CW Performance  
VDD = 28 V, IDQ = 80mA  
-10  
70  
60  
50  
40  
30  
20  
10  
22  
70  
60  
50  
40  
30  
20  
10  
Efficiency  
-20  
-30  
-40  
-50  
-60  
-70  
20  
18  
16  
14  
12  
10  
ACP Up  
Gain  
ACP Low  
1805 Gain  
1842.5 Gain  
1880 Gain  
1805 Eff  
Efficiency  
1842.5 Eff  
1880 Eff  
pxac180602md_g5  
pxac180602md_g2  
29  
33  
37  
41  
45  
49  
27  
31  
35  
39  
43  
47  
Output Power (dBm)  
Average Output Power (dBm)  
Data Sheet  
3 of 10  
Rev. 02.1, 2015-06-18  
PXAC180602MD  
Typical Performance (cont.)  
Small Signal CW  
CW Performance  
at various VDD  
IDQ = 80 mA, ƒ = 1880 MHz  
Gain & Input Return Loss  
VDD = 28 V, IDQ = 80 mA  
20  
18  
16  
14  
12  
-2  
22  
20  
18  
16  
14  
12  
10  
70  
60  
50  
40  
30  
20  
10  
Gain  
IRL  
Gain  
-6  
-10  
-14  
-18  
V
V
V
= 24 V  
DD
= 28 V  
DD
DD = 32 V  
Efficiency  
35  
pxac180602md_g7  
pxac180602md_g6  
27  
31  
39  
43 47  
51  
1700 1750 1800 1850 1900 1950 2000  
Frequency (MHz)  
Output Power (dBm)  
Data Sheet  
4 of 10  
Rev. 02.1, 2015-06-18  
PXAC180602MD  
Load Pull Performance – P  
1dB  
Main Side Load Pull Performance – CW signal: V  
= 28 V, I  
= 85 mA, Class AB  
DD  
DQ  
P
1dB  
Max Output Power  
Max PAE  
Zs  
[W]  
Freq  
[MHz]  
Zl  
[W]  
Gain  
[dB]  
P
P
[W]  
PAE  
[%]  
Zl  
[W]  
Gain  
[dB]  
P
P
OUT  
[W]  
PAE  
[%]  
OUT  
OUT  
OUT  
[dBm]  
43.62  
43.29  
43.30  
[dBm]  
41.73  
42.10  
41.87  
1805  
1843  
1880  
7.3-j16.9  
6.6-j18.9  
8.3-j21.5  
8.8-j10.33  
8.4-j10.4  
7.5-j9.3  
20.55  
20.71  
20.67  
23  
63.4  
60.8  
63.4  
12.8-j1.9  
11.8-j4.4  
9.3-j3.9  
21.86  
22.12  
21.86  
14.89  
16.22  
15.38  
70.8  
69.6  
69.4  
21.33  
21.38  
Peak Side Load Pull Performance – CW signal: V  
= 28 V, V  
= 1.4 V  
DD  
GSPK  
P
1dB  
Max Output Power  
Max PAE  
Zs  
[W]  
Freq  
[MHz]  
Zl  
[W]  
Gain  
[dB]  
P
P
[W]  
PAE  
Zl  
[W]  
Gain  
[dB]  
P
P
OUT  
[W]  
PAE  
[%]  
OUT  
OUT  
OUT  
[dBm]  
46.35  
46.43  
46.42  
[%]  
63.8  
63.3  
62.8  
[dBm]  
45.09  
45.14  
44.99  
1805  
1842  
1880  
13.5 – j0.7  
7.7 – j0.2  
4.8 – j0.2  
5.2 – j8.4  
4.7 – j8.4  
4.4 – j8.5  
16.92  
16.8  
16.7  
43.15  
43.95  
43.85  
9.9 – j8.0  
9.0 – j7.1  
8.6 – j6.8  
17.51  
17.47  
17.36  
32.28  
32.66  
31.55  
72.3  
72.7  
72.4  
Load Pull Performance – P  
3dB  
Main Side Load Pull Performance – CW signal: V  
= 28 V, I  
= 85 mA, Class AB  
DQ  
DD  
P
3dB  
Max Output Power  
Max PAE  
Zs  
[W]  
Freq  
[MHz]  
Zl  
[W]  
Gain  
[dB]  
P
P
PAE  
[%]  
Zl  
[W]  
Gain  
[dB]  
P
P
OUT  
[W]  
PAE  
[%]  
OUT  
OUT  
OUT  
[dBm]  
44.30  
43.98  
43.89  
[W]  
26.92  
25  
[dBm]  
43.28  
42.94  
42.91  
1805  
1843  
1880  
7.3-j16.9  
6.6-j18.9  
8.3-j21.5  
9.0-j11.7  
9.0-j11.7  
8.9-j11.9  
18.65  
19  
63.8  
62.0  
61.7  
13.1-j7.1  
11.5-j5.9  
11.1-j6.4  
19.78  
20  
21.28  
19.68  
19.54  
70.8  
69.5  
69.0  
19.26  
24.5  
20.2  
Peak Side Load Pull Performance – CW signal: V  
= 28 V, V  
= 1.4 V  
DD  
GSPK  
P
3dB  
Max Output Power  
Max PAE  
Zs  
[W]  
Freq  
[MHz]  
Zl  
[W]  
Gain  
[dB]  
P
P
PAE  
Zl  
[W]  
Gain  
[dB]  
P
P
OUT  
PAE  
[%]  
OUT  
OUT  
OUT  
[dBm]  
47.00  
47.00  
47.00  
[W]  
50.12  
50.1  
50.1  
[%]  
64.4  
64.6  
63.3  
[dBm]  
45.58  
45.67  
45.74  
[W]  
36.14  
36.9  
37.5  
1805  
1842  
1880  
13.5 – j0.7  
7.7 – j0.2  
4.8 – j0.2  
5.1 – j9.2  
5.0 – j9.2  
4.6 – j9.35  
14.94  
14.9  
10.0 – j8.3  
9.3 – j7.7  
8.1 – j7.2  
15.52  
15.45  
15.37  
71.6  
72.0  
71.6  
14.72  
Data Sheet  
5 of 10  
Rev. 02.1, 2015-06-18  
PXAC180602MD  
Reference Circuit , 1805 – 1880 MHz  
C801  
R801  
C802  
RO4350, 0.508  
(201)  
VGSPEAK  
VDD  
S1  
S3  
R802  
R803  
C109  
C110  
C111  
C112  
C101  
C102  
R102  
C105  
C113  
C103  
R101  
C104  
RF_IN  
RF_OUT  
C114  
C106  
R105  
C115  
R103  
R104  
C107  
C116  
C117  
VDD  
C108  
VGSMAIN  
C118  
C805 R806  
C804  
C803  
R805  
R804  
S2  
S5  
S4  
PXAC180602MD-06  
p
x a c 1 8 0 6 0 2 m d _ C D _ 0 2 - 1 8 - 2 0 1 5  
Reference circuit assembly diagram (not to scale)  
Data Sheet  
6 of 10  
Rev. 02.1, 2015-06-18  
PXAC180602MD  
Reference Circuit (cont.)  
Reference Circuit Assembly  
DUT  
PXAC180602MD V1  
Test Fixture Part No.  
PCB  
LTA/PXAC180602MD V1  
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1805 – 1880 MHz  
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower  
Components Information  
Component  
Input  
Description  
Suggested Manufacturer  
P/N  
C101, C107  
Capacitor, 10 µF  
Capacitor, 24 pF  
Taiyo Yuden  
ATC  
UMK325C7106MM-T  
ATC100A240JW150XB  
C102, C103, C106,  
C108  
C104  
C105  
Capacitor, 2.4 pF  
Capacitor, 15 pF  
Capacitor, 1000 pF  
ATC  
ATC100A2R4CW150XB  
ATC100A150JW150XB  
ECJ-1VB1H102K  
ATC  
C801, C802, C803,  
C804, C805  
Panasonic Electronic Components  
R101, R103  
R102, R104  
R105  
Resistor, 10 W  
Resistor, 0.0 W  
Resistor, 50 W  
Resistor, 100 W  
Resistor, 10 W  
Resistor, 1.3k  
Potentiometer, 2k W  
Voltage Regulator  
Transistor  
Panasonic Electronic Components  
Panasonic Electronic Components  
Anaren  
ERJ-3GEYJ100V  
ERJ-8GEY0R00V  
C16A50Z4  
R801, R805  
R802, R803, R804  
R806  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Bourns Inc.  
ERJ-8GEYJ101V  
ERJ-8GEYJ100V  
ERJ-3GEYJ132V  
3224W-1-202E  
LM78L05ACM  
BCP56  
S1, S2  
S3, S4  
Texas Instruments  
S5  
Infineon Technologies  
Output  
C109, C110, C116,  
C117  
Capacitor, 10 µF  
Capacitor, 24 pF  
Capacitor, 100 µF  
Taiyo Yuden  
UMK325C7106MM-T  
ATC100A240JW150XB  
EEE-FP1V101AP  
C112, C113, C114,  
C115  
ATC  
C111, C118  
Panasonic Electronic Components  
Pinout Diagram (top view)  
Peak  
D1  
Main  
D2  
S
PG_HB1DSO-  
4_gw_pd_02-18-2015  
Pin  
D1  
D2  
G1  
G2  
S
Description  
Drain device 1 (Peak)  
Drain device 2 (Main)  
Gate device 1 (Peak)  
Gate device 2 (Main)  
Source (flange)  
G1  
G2  
Lead connections for PXAC180602MD  
Data Sheet  
7 of 10  
Rev. 02.1, 2015-06-18  
PXAC180602MD  
Package Outline Specifications  
Package PG-HB1DSO-4 with Formed Leads  
1.  
19.44  
4X 4.90  
2X 6.55  
3.28  
4X 3.99  
2.62  
4X 1.02  
2X 1.65  
0.10 MAX.  
D2  
D1  
Y
2X 0.35  
G1  
G2  
1.86  
1.27  
14.94 ± 0.15  
0...0.1  
PG-HB1DSO-4_01_02-13-2015  
Diagram Notes–unless otherwise specified:  
1. Mold/Dam Bar/Metal protusion of 0.30mm max per side not included.  
2. Metal protrusion are connected to source and shall not exceed 0.10mm max.  
3. Fillets and radii: all radii are 0.3 mm max.  
4.Interpret dimensions and tolerances per ISO 8015.  
5. Dimensions are mm.  
6. Exposed metal surface pre-plated, may not be covered by mold compound.  
7. All tolerances 0.1mm unless specified otherwise.  
8. All metal surfaces pre-plated, except area of cut.  
9. Lead thickness: 0.25 mm.  
10. Gold plating thickness: 0.25 micron [10 microinch] max.  
11. Pins: D1, D2 – drain; G1, G2 – gate; S – source.  
Data Sheet  
8 of 10  
Rev. 02.1, 2015-06-18  
PXAC180602MD  
Package Outline Specifications (cont.)  
Package PG-HB1DSO-4 with Formed Leads (bottom side)  
VIEWÊY  
2X 0.50  
D2  
G2  
D1  
G1  
S
2.  
2.  
16.26  
18.44  
Diagram Notes–unless otherwise specified:  
1. Mold/Dam Bar/Metal protusion of 0.30mm max per side not included.  
2. Metal protrusion are connected to source and shall not exceed 0.10mm max.  
3. Fillets and radii: all radii are 0.3 mm max.  
4.Interpret dimensions and tolerances per ISO 8015.  
5. Dimensions are mm.  
6. Exposed metal surface pre-plated, may not be covered by mold compound.  
7. All tolerances 0.1mm unless specified otherwise.  
8. All metal surfaces pre-plated, except area of cut.  
9. Lead thickness: 0.25 mm.  
10. Gold plating thickness: 0.25 micron [10 microinch] max.  
11. Pins: D1, D2 – drain; G1, G2 – gate; S – source.  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
9 of 10  
Rev. 02.1, 2015-06-18  
PXAC180602MD V1  
Revision History  
Revision  
Date  
Data Sheet Type  
Advance  
Page  
Subjects (major changes since last revision)  
01  
2013-11-12  
2014-04-15  
All  
Data Sheet reflects advance specification for product development  
01.1  
Advance  
1
3
Added package, updated package identification  
updated package identification  
02  
2015-02-13  
2015-06-18  
Production  
Production  
All  
Data Sheet reflects released product specification - updated features, RF & DC characteristics,  
Maximum Ratings, Ordering Information, added graphs,loadpull information and reference  
circuit, updated package outline  
02.1  
7
Corrected test fix part no. to LTA  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
(highpowerRF@infineon.com)  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2015-06-18  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2014 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-  
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device  
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
10 of 10  
Rev. 02.1, 2015-06-18  
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 		PXA210 英特尔-R PXA250和PXA210应用处理器[ Intel-R PXA250 and PXA210 Applications Processors ] 46 页

INTEL

 		PXA250 英特尔-R PXA250和PXA210应用处理器[ Intel-R PXA250 and PXA210 Applications Processors ] 46 页

INTEL

 		PXA255 PXA255处理器[ PXA255 Processor ] 40 页

INTEL

 		PXA270 电气，机械和热规格[ Electrical, Mechanical, and Thermal Specification ] 126 页

ACTEL

 		PXA270 为PXA270平台的存储解决方案[ Storage solution for PXA270 platform ] 2 页

ACTEL

 		PXA300 为Marvell公司的PXA300 / 310平台存储解决方案[ Storage Solution for Marvell’s PXA300/310 Platform ] 2 页

MARVELL

 		PXA300 可扩展性能高达624兆赫的高性价比和高能效的智能手机，嵌入式解决方案，以及手持设备[ Scalable Performance up to 624 MHz for Cost-Effective and Power-Efficient Smartphones, Embedded Solutions, and Handheld Devices ] 4 页

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