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PXAC182002FC_15

型号：

PXAC182002FC_15

品牌：

INFINEON[ Infineon ]

页数：

8 页

PDF大小：

1179 K

下载PDF手册
PXAC182002FC  
Thermally-Enhanced High Power RF LDMOS FET  
180 W, 28 V, 1805 – 1880 MHz  
Description  
PXAC182002FC  
Package H-37248-4  
The PXAC182002FC is a 180-watt LDMOS FET with an asymmetri-  
cal design intended for use in multi-standard cellular power amplifier  
applications in the 1805 to 1880 MHz frequency band. Features  
include dual-path design, input and output matching, high gain and  
thermally-enhanced package with earless flanges. Manufactured  
with Infineon's advanced LDMOS process, this device provides  
excellent thermal performance and superior reliability.  
Features  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz,  
3GPP WCDMA signal,  
•ꢀ Broadband internal input and output matching  
•ꢀ Asymmetrical Doherty design  
- Main: 70 W Typ (P  
)
1dB  
PAR = 10 dB, 3.84 MHz BW  
- Peak: 110 W Typ (P  
)
1dB  
24  
20  
16  
12  
8
60  
40  
20  
0
•ꢀ Typical pulsed CW performance, 1880 MHz, 28 V,  
Efficiency  
combined outputs  
- Output power at P  
- Efficiency = 64%  
- Gain = 14 dB  
= 194 W  
3dB  
Gain  
•ꢀ Capable of handling 10:1 VSWR @28 V, 110 W  
(CW) output power  
•ꢀ Integrated ESD protection  
•ꢀ Low thermal resistance  
-20  
-40  
-60  
PAR @ 0.01% CCDF  
•ꢀ Pb-free and RoHS compliant  
4
0
c182002fc_g1  
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)  
= 28 V, I = 400 mA, V = 1.1 V, P = 28.2 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84  
V
DD  
DQ  
GSPEAK  
OUT  
MHz, peak/average = 10 dB @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
15.5  
48.5  
—
Typ  
16.5  
51  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
—
%
Adjancent Channel Power Ratio  
ACPR  
–30  
–26  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 8  
Rev. 02.2, 2015-06-05  
PXAC182002FC  
DC Characteristics (each side)  
Characteristic  
Conditions  
Symbol  
Min  
65  
Typ  
—
Max  
—
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V(  
BR)DSS  
DS  
V
= 28 V, V = 0 V  
I
I
—
—
0.1  
1.0  
—
µA  
µA  
W
DS  
DS  
GS  
DSS  
V
= 63 V, V = 0 V  
—
—
GS  
DSS  
On-State Resistance (main)  
(peak)  
V
GS  
= 10 V, V = 0.1 V  
R
R
—
0.18  
0.135  
2.65  
1.2  
DS  
DS(on)  
DS(on)  
V
GS  
= 10 V, V = 0.1 V  
—
—
W
DS  
Operating Gate Voltage (main)  
(peak)  
V
= 28 V, I  
= 28 V, I  
= 400 mA  
= 0 A  
V
GS  
2.55  
0.9  
—
2.75  
1.3  
0.1  
V
DS  
DS  
DQ  
DQ  
V
V
GS  
V
Gate Leakage Current  
V
GS  
= 10 V, V = 0 V  
I
GSS  
—
µA  
DS  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Operating Voltage  
V
DSS  
V
–6 to +10  
0 to +32  
225  
V
GS  
DD  
V
V
Junction Temperature  
Storage Temperature Range  
T
°C  
J
T
STG  
–65 to +150  
1.088  
°C  
Thermal Resistance (main, T  
(peak, T  
= 70°C, 28 W CW)  
= 70°C, 100 W CW)  
R
°C/W  
°C/W  
CASE  
qJC  
qJC  
R
0.587  
CASE  
Ordering Information  
Type and Version  
PXAC182002FC V1  
Order Code  
Package Description  
H-37248-4, earless flange  
H-37248-4, earless flange  
Shipping  
PXAC182002FCV1XWSA1  
PXAC182002FCV1R250XTMA1  
Tray  
PXAC182002FC V1 R250  
Tape & Reel, 250 pcs  
Data Sheet  
2 of 8  
Rev. 02.2, 2015-06-05  
PXAC182002FC  
Typical Performance (data taken in a production test fixture)  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz,  
3GPP WCDMA signal, PAR = 10 dB,  
BW = 3.84 MHz  
Single-carrier WCDMA 3GPP Drive-up  
VDD = 28 V, IDQ = 400 mA, ƒ = 1805-1880 MHz,  
3GPP WCDMA signal, PAR = 10 dB,  
BW = 3.84 MHz  
1880 ACPL  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
60  
50  
40  
30  
20  
10  
0
-20  
1880 ACPU  
1842.5 ACPL  
1842.5 ACPU  
1805 ACPL  
1805 ACPU  
-25  
-30  
-35  
-40  
-45  
-50  
ACP Up  
ACP Low  
Efficiency  
37  
c182002fc_g2  
c182002fc_g3  
27  
32  
42  
47  
52  
27  
32  
37  
42  
47  
52  
Average Output Power (dBm)  
Average Output Power (dBm)  
CW Performance  
at various VDD  
CW Performance  
VDD = 28 V, IDQ = 400mA  
IDQ = 400 mA, ƒ = 1880 MHz  
1842.5 Gain  
1805 Gain  
1880 Gain  
1880 Eff  
1842.5 Eff  
1805 Eff  
25  
20  
15  
10  
5
65  
50  
35  
20  
5
24  
20  
16  
12  
8
65  
55  
45  
35  
25  
15  
5
Efficiency  
Efficiency  
Gain  
Gain  
24V Gain  
28V Gain  
32V Gain  
24V Eff  
28V Eff  
32V Eff  
4
0
c182002fc_g4  
c182002fc_g5  
29  
33  
37  
41  
45  
49  
53  
57  
27  
35  
43  
51  
59  
Output Power (dBm)  
Output Power (dBm)  
Data Sheet  
3 of 8  
Rev. 02.2, 2015-06-05  
PXAC182002FC  
Typical Performance (cont.)  
CW Performance Small Signal  
Gain & Input Return Loss  
VDD = 28 V, IDQ = 400 mA  
18  
16  
14  
12  
10  
-10  
-15  
-20  
-25  
-30  
Gain  
IRL  
c182002fc_g6  
1700 1750 1800 1850 1900 1950 2000  
Frequency (MHz)  
Load Pull Performance  
Main Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, I  
= 405 mA  
DQ  
P
1dB  
Max Output Power  
Max Drain Efficiency  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
[dB]  
P
P
[W]  
Gain  
[dB]  
P
P
OUT  
[W]  
hD  
hD  
OUT  
OUT  
OUT  
[dBm]  
[dBm]  
[%]  
[%]  
1810 3.94 – j10.15 2.92 – j5.27  
1840 5.13 – j10.93 2.93 – j4.16  
1880 5.90 – j12.44 2.73 – j5.17  
19.2  
19.5  
19.2  
49.4  
86  
54.0  
57.6  
55.2  
6.49 – j2.19  
5.82 – j2.44  
4.53 – j2.29  
21.9  
21.7  
21.5  
47.2  
52  
66.6  
66.3  
67.9  
49.3  
85  
47.5  
56  
49.5  
89  
47.7  
59  
Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, I  
= 685 mA  
DQ  
P
1dB  
Max Output Power  
Max Drain Efficiency  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
[dB]  
P
P
Gain  
[dB]  
P
P
OUT  
[W]  
hD  
hD  
OUT  
OUT  
OUT  
[dBm]  
[W]  
123  
117  
116  
[dBm]  
[%]  
[%]  
1810 3.71 – j9.13 4.64 – j5.44  
1840 4.76 – j8.65 4.66 – j5.68  
1880 6.40 – j9.13 4.63 – j5.74  
20.5  
20.6  
20.8  
50.9  
55.5  
54.5  
54.3  
3.52 – j2.84  
3.39 – j3.01  
2.83 – j3.50  
22.7  
23.2  
23.1  
49.7  
94  
66.2  
64.1  
64.3  
50.7  
49.2  
84  
50.7  
49.2  
83  
Data Sheet  
4 of 8  
Rev. 02.2, 2015-06-05  
PXAC182002FC  
Reference Circuit , 1805 – 1880 MHz  
RO4350, .020  
(60)  
RO4350, .020  
(61)  
VGS  
VDD  
C217  
C209 C213  
C211  
R106  
C102  
C106  
C105  
C108  
R102  
C212 C210  
R104  
R101  
C218  
R103  
C203  
C201  
S1  
RF_IN  
RF_OUT  
C219  
C215  
C208  
C104  
C101  
C207  
R105  
C206  
C216  
C204 C202  
VDD  
C107  
C103  
C214  
VGSPK  
C205  
PXAC182002FC_IN_01  
PXAC182002FC_OUT_01  
c
1 8 2 0 0 2 f c _ C D _ 0 3 - 2 4 - 2 0 1 5  
Reference circuit assembly diagram (not to scale)  
Data Sheet  
5 of 8  
Rev. 02.2, 2015-06-05  
PXAC182002FC  
Reference Circuit (cont.)  
Reference Circuit Assembly  
DUT  
PXAC182002FC V1  
Test Fixture Part No.  
PCB  
LTA/PXAC182002FC V1  
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1805 – 1880 MHz  
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower  
Components Information  
Component  
Input  
Description  
Manufacturer  
P/N  
C101  
Capacitor, 1.2 pF  
Capacitor, 0.5 pF  
ATC  
ATC600F1R2CW250T  
ATC600F0R5CW250T  
ATC600F180JW250T  
UMK325C7106MM-T  
C8A50Z4A  
C102  
ATC  
C103, C104, C105, C106 Capacitor, 18 pF  
ATC  
C107, C108  
R101  
Capacitor, 10 µF  
Resistor, 50 W  
Resistor, 18 ohms  
Resistor, 301 W  
Resistor, 10 W  
Hybrid Coupler  
Taiyo Yuden  
Richardson  
R102  
Panasonic Electronic Components  
ERJ-8GEYJ180V  
CR0603-16W-3010FT  
ERJ-3GEYJ100V  
X3C19P1-03S  
R103, R104  
R105, R106  
S1  
Venkel  
Panasonic Electronic Components  
Anaren  
Output  
C201, C207, C215,  
C218, C219  
Capacitor, 18 pF  
ATC  
ATC600F180JW250T  
C202  
Capacitor, 0.8 pF  
Capacitor, 5.1 pF  
Capacitor, 1.6 pF  
Capacitor, 220 µF  
Capacitor, 10 µF  
ATC  
ATC600F0R8AW250T  
ATC600F5R1AW250T  
ATC600F1R6AW250T  
SK221M050ST  
C203  
ATC  
C204  
ATC  
C205, C217  
Cornell Dubilier Electronics  
Taiyo Yuden  
C206, C208, C209,  
UMK325C7106MM-T  
C211, C213, C214, C216  
C210  
C212  
Capacitor, 0.5 pF  
Capacitor, 1.6 pF  
ATC  
ATC  
ATC600F0R5AW250T  
ATC600F1R6AW250T  
Pinout Diagram (top view)  
S
Main  
Peak  
Pin Description  
D1 Drain device 1 (Main)  
D1  
D2  
D2 Drain device 2 (Peak)  
G1 Gate device 1 (Main)  
G2 Gate device 2 (Peak)  
S Source (flange)  
H-37248-4_pd_10-10-2012  
G1  
G2  
Lead connections for PXAC182002FC  
Data Sheet  
6 of 8  
Rev. 02.2, 2015-06-05  
PXAC182002FC  
Package Outline Specifications  
Package H-37248-4  
(8.89  
[.350])  
(5.08  
[.200])  
2X 45° X 2.72  
[45° X .107]  
C
L
+0.13  
4X R0.76  
-0.38  
2X 4.83±0.51  
[.190±0.020]  
D1  
D2  
+0.005  
-0.015  
R.030  
[
]
FLANGE 9.78  
[.385]  
LID 9.40  
[.370]  
19.43±0.51  
[.765±0.020]  
C
L
G1  
G2  
4X 3.81  
[.150]  
2X 12.70  
[.500]  
SPH 1.57  
[.062]  
19.81±0.20  
[.780±0.008]  
1.02  
[.040]  
H-37248-4_po_02_01-09-2013  
1
3.76±0.25  
[.148±0.010]  
C
L
20.57  
[.810]  
S
Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances 0.127 [.005] unless specified otherwise.  
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.  
5. Lead thickness: 0.10 + 0.076/–0.025 mm [0.004+0.003/–0.001 inch].  
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
7 of 8  
Rev. 02.2, 2015-06-05  
PXAC182002FC V1  
Revision History  
Revision  
Date  
Data Sheet Type  
Advance  
Page  
Subjects (major changes since last revision)  
01  
02  
2014-09-23  
2015-03-24  
All  
Data Sheet reflects advance specification for product development  
Production  
All  
All  
Data Sheet reflects released product specification  
Revised all data and includes updated final specs, typical performance graphs, loadpull, refer-  
ence circuit, package outline  
02.1  
02.2  
2015-05-20  
2015-06-05  
Production  
Production  
1
1
Updated single-carrier WCDMA test spec  
Corrected I/O in description paragraph, removed f from single-carrier WCDMA test spec condi-  
1
tion  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
(highpowerRF@infineon.com)  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2015-06-05  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2014 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-  
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device  
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
8 of 8  
Rev. 02.2, 2015-06-05  
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