请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

PXAC182908FV

型号：

PXAC182908FV

品牌：

INFINEON[ Infineon ]

页数：

9 页

PDF大小：

1215 K

下载PDF手册
PXAC182908FV  
Thermally-Enhanced High Power RF LDMOS FET  
240 W, 28 V, 1805 – 1880 MHz  
Description  
PXAC182908FV  
Package H-37275G-6/2  
The PXAC182908FV is a 240-watt LDMOS FET with an asymmetri-  
cal design intended for use in multi-standard cellular power amplifier  
applications in the 1805 to 1880 MHz frequency band. Features  
include dual-path design, input and output matching, high gain and  
thermally-enhanced package with earless flanges. Manufactured  
with Infineon's advanced LDMOS process, this device provides  
excellent thermal performance and superior reliability.  
Features  
Single-carrier WCDMA Drive-up  
•ꢀ Broadband internal input and output matching  
•ꢀ Asymmetrical Doherty design  
VDD = 28 V, IDQ = 600 mA, ƒ = 1880 MHz,  
3GPP WCDMA signal,  
PAR = 10 dB, 3.84 MHz BW  
- Main : P  
- Peak : P  
= 120 W Typ  
= 220 W Typ  
1dB  
1dB  
24  
20  
16  
12  
8
60  
40  
20  
0
•ꢀ Typical Pulsed CW performance, 1842.5 MHz, 28 V,  
combined outputs  
Efficiency  
- Output power at P  
= 240 W  
1dB  
- Efficiency = 52.6%  
- Gain = 14.5 dB  
•ꢀ Capable of handling 10:1 VSWR @28 V, 240 W  
Gain  
(CW) output power  
•ꢀ Human Body Model Class 2 (per ANSI/ESDA/  
JEDEC JS-001)  
-20  
-40  
-60  
PAR @ 0.01% CCDF  
•ꢀ Integrated ESD protection  
•ꢀ Low thermal resistance  
4
•ꢀ Pb-free and RoHS compliant  
0
pxac182908fc_g1  
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)  
= 28 V, I = 600 mA, V = 0.70 V, P = 70 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,  
V
DD  
DQ  
GSPEAK  
OUT  
1
peak/average = 10 dB @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
14  
Typ  
15  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
hD  
49.5  
—
51  
—
%
Adjancent Channel Power Ratio  
ACPR  
–27.5  
–25  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 9  
Rev. 02.1, 2015-07-29  
PXAC182908FV  
DC Characteristics (each side)  
Characteristic  
Conditions  
Symbol  
Min  
65  
Typ  
—
Max  
—
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V(  
BR)DSS  
DS  
V
= 28 V, V = 0 V  
I
I
—
—
1
µA  
µA  
W
DS  
DS  
GS  
DSS  
V
= 60 V, V = 0 V  
—
—
10  
GS  
DSS  
On-State Resistance (main)  
On-State Resistance (peak)  
Operating Gate Voltage (main)  
(peak)  
V
GS  
= 10 V, V = 0.1 V  
R
R
—
0.11  
0.06  
2.70  
0.60  
—
—
DS  
DS(on)  
DS(on)  
V
GS  
= 10 V, V = 0.1 V  
—
—
W
DS  
V
= 28 V, I  
= 28 V, I  
= 600 mA  
= 0 A  
V
GS  
2.45  
0.45  
—
2.95  
0.80  
1
V
DS  
DS  
DQ  
DQ  
V
V
GS  
V
Gate Leakage Current  
V
GS  
= 10 V, V = 0 V  
I
GSS  
µA  
DS  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Operating Voltage  
V
DSS  
V
–6 to +10  
0 to +32  
225  
V
GS  
DD  
V
V
Junction Temperature  
Storage Temperature Range  
T
°C  
J
T
STG  
–65 to +150  
0.56  
°C  
Thermal Resistance (main, T  
(peak, T  
= 70°C, 56 W CW)  
= 70°C, 200 W CW)  
R
°C/W  
°C/W  
CASE  
qJC  
qJC  
R
0.29  
CASE  
Ordering Information  
Type and Version  
Order Code  
Package Description  
Shipping  
PXAC182908FV V1 R0  
PXAC182908FV V1 R250  
PXAC182908FVV1R0XTMA1  
PXAC182908FVV1R250XTMA1  
H-37275G-6/2, earless flange  
H-37275G-6/2, earless flange  
Tape & Reel, 50 pcs  
Tape & Reel, 250 pcs  
Data Sheet  
2 of 9  
Rev. 02.1, 2015-07-29  
PXAC182908FV  
Typical Performance (data taken in a production test fixture)  
Single-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 600 mA, ƒ = 1880 MHz,  
3GPP WCDMA signal, PAR = 10 dB,  
BW = 3.84 MHz  
Single-carrier WCDMA Broadband  
Performance  
VDD = 28 V, IDQ = 600 mA, POUT = 48.45 dBm,  
3GPP WCDMA signal, PAR = 10 dB  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
60  
50  
40  
30  
20  
10  
0
20  
55  
45  
35  
25  
15  
5
Efficiency  
18  
16  
14  
12  
10  
Gain  
ACPU  
ACPL  
Eff  
pxac182908fc_g2  
pxac182908fc_g4  
1650  
1750  
1850  
1950  
2050  
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
Frequency (MHz)  
Single-carrier WCDMA 3GPP Drive-up  
CW Performance  
VDD = 28 V, IDQ = 600 mA, ƒ = 1805-1880 MHz,  
3GPP WCDMA signal, PAR = 10 dB,  
BW = 3.84 MHz  
VDD = 28 V, IDQ = 600 mA  
1880 Gain  
1842.5 Gain  
1805 Gain  
1880 Eff  
1842.5 Eff  
1805 Eff  
1805 ACPU  
1842.5 ACPU  
-10  
60  
20  
18  
16  
14  
12  
10  
8
60  
50  
40  
30  
20  
10  
0
1880 ACPU  
1805 ACPL  
1842.5 ACPL  
1880 ACPL  
1805 EFF  
Efficiency  
-20  
-30  
-40  
-50  
-60  
-70  
50  
40  
30  
20  
10  
0
1842.5 EFF  
1880 EFF  
Gain  
pxac182908fc_g5  
pxac182908fc_g3  
25  
30  
35  
40  
45  
50  
55  
29  
33  
37  
41  
45  
49  
53  
57  
Output Power (dBm)  
Average Output Power (dBm)  
Data Sheet  
3 of 9  
Rev. 02.1, 2015-07-29  
PXAC182908FV  
Typical Performance (cont.)  
CW Performance  
at various VDD  
IDQ = 600 mA, ƒ = 1880 MHz  
Small Signal CW  
Gain & Input Return Loss  
VDD = 28 V, IDQ = 600 mA  
20  
60  
50  
40  
30  
20  
10  
0
18  
16  
14  
12  
10  
-2  
Gain  
-6  
Gain  
15  
-10  
-14  
-18  
24V Gain  
10  
5
28V Gain  
32V Gain  
24V Eff  
28V Eff  
32V Eff  
IRL  
Efficiency  
35  
pxac182908fc_g6  
pxac182908fc_g7  
27  
43  
51  
59  
1700 1750 1800 1850 1900 1950 2000 2050  
Output Power (dBm)  
Frequency (MHz)  
Load Pull Performance  
Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, I  
= 720 mA  
DQ  
P
1dB  
Max Output Power  
Max PAE  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
[dB]  
P
P
Gain  
[dB]  
P
P
OUT  
[W]  
hD  
hD  
OUT  
OUT  
OUT  
[dBm]  
[W]  
133  
136  
132  
[dBm]  
[%]  
[%]  
1805  
1842.5  
1880  
4.98+j9.12  
2.98+j7.93  
1.98+j6.60  
2.04–j3.48  
2.19–j3.56  
2.18–j3.52  
19.6  
19.0  
20.0  
51.3  
55.3  
55.9  
55.7  
3.50–j2.06  
3.48–j1.96  
3.36–j1.89  
21.4  
20.9  
21.9  
50.0  
99  
63.6  
64.0  
64.0  
51.3  
49.9  
99  
51.2  
49.8  
95  
Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, I  
= 100 mA  
DQ  
P
1dB  
Max Output Power  
Max PAE  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
[dB]  
P
P
Gain  
[dB]  
P
P
hD  
hD  
OUT  
OUT  
OUT  
OUT  
[dBm]  
[W]  
261  
258  
249  
[dBm]  
[W]  
176  
192  
192  
[%]  
[%]  
1805  
1842.5  
1880  
0.68–j3.85  
0.60–j4.14  
0.87–j4.71  
4.06–j3.83  
4.50–j3.68  
5.12–j3.69  
18.6  
18.9  
18.8  
54.2  
55.4  
55.3  
54.0  
3.01–j0.87  
3.02–j1.36  
3.01–j1.52  
20.4  
20.6  
20.5  
52.5  
64.1  
64.3  
64.6  
54.1  
52.8  
54.0  
52.8  
Data Sheet  
4 of 9  
Rev. 02.1, 2015-07-29  
PXAC182908FV  
Reference Circuit , 1805 – 1880 MHz  
VGSMAIN  
RO4350, .020  
(61)  
RO4350, .020  
(194)  
R805  
C801  
R801  
C802  
C208 C209  
C204  
C203  
C210  
C803  
VDD  
S3  
S2  
S1  
R802  
C229  
C230  
C205  
C220  
C206  
C207  
R803  
C202  
C201  
C102 C101  
R102  
R101  
C221  
C103  
C104  
C110  
C105  
C222  
RF  
OUT  
RF  
IN  
C223  
U1  
C228  
C224  
C106  
R105  
C109  
C107  
C108  
C225  
C216C217  
R103  
C218  
C219  
R104  
C112 C111  
C226  
C215  
VDD  
C211  
C212  
VGSPEAK  
C227  
S4  
C231  
C223  
C213  
C214  
R804  
PXAC182908FV_OUT_02_D  
PXAC182908FV_IN_02A  
p
x a c 1 8 2 9 0 8 f v _ C D _ 0 7 - 0 6 - 2 0 1 5  
Reference circuit assembly diagram (not to scale)  
Data Sheet  
5 of 9  
Rev. 02.1, 2015-07-29  
PXAC182908FV  
Reference Circuit (cont.)  
Reference Circuit Assembly  
DUT  
PXAC182908FV V1  
Test Fixture Part No.  
PCB  
LTA/PXAC182908FV V1  
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1805 – 1880 MHz  
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower  
Components Information  
Component  
Description  
Manufacturer  
P/N  
Input  
C101, C105, C110, C111  
Capacitor, 18 pF  
Capacitor, 10 µF  
Capacitor, 1.5 pF  
Capacitor, 3.0 pF  
Capacitor, 0.4 pF  
Capacitor, 1.0 pF  
Capacitor, 0.7 pF  
Capacitor, 0.5 pF  
Capacitor, 1000 pF  
Resistor, 5.1 W  
Resistor, 1K W  
ATC  
ATC100A180JW150XB  
LLL31BC70G106MA01L  
ATC100A1R5CW150XB  
ATC100A3R0CW150XB  
ATC100A0R4CW150XB  
ATC100A1R0CW150XB  
ATC100A0R7CW150XB  
ATC100A0R5CW150XB  
ECJ-1VB1H102K  
ERJ-8GEYJ5R1V  
ERJ-8GEYJ102V  
RICHARDSON  
C102, C112  
C103  
Murata  
ATC  
C104  
ATC  
C106  
ATC  
C107  
ATC  
C108  
ATC  
C109  
ATC  
C801, C802, C803  
R101, R103  
R102, R104  
R105  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Richardson  
Resistor, 50 W  
R801  
Resistor, 1.3K W  
Resistor 1.2K W  
Resistor, 50 W  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Infineon Technologies  
Texas Instruments  
ERJ-3GEYJ132V  
ERJ-3GEYJ122V  
ERJ-8GEYJ510V  
BCP56  
R802  
R803, R804, R805  
S1  
Transistor  
S2  
Voltage regualtor  
Potentiometer, 2k W  
Hybrid coupler  
LM78L05ACM  
S3, S4  
Bourns Inc.  
3224W-1-202E  
U1  
Anaren  
X3C19P1-05S  
Output  
C201, C202, C203, C204,  
C205, C206, C207, C208,  
C209, C210, C211, C212,  
C213, C214, C215, C216,  
C217, C218, C219  
Capacitor, 10 µF  
Taiyo Yuden  
UMK325C7106MM-T  
C220, C226, C227, C228  
Capacitor, 18 pF  
Capacitor, 2.2 pF  
Capacitor, 0.3 pF  
Capacitor, 1.2 pF  
Capacitor, 0.4 pF  
Capacitor, 1.1 pF  
Capacitor, 220 µF  
ATC  
ATC100A180JW150XB  
ATC100A2R2CW150XB  
ATC100A0R3CW150XB  
ATC100A1R2CW150XB  
ATC100A0R4CW150XB  
ATC100A1R1CW150XB  
EEE-FP1V221AP  
C221  
ATC  
C222  
ATC  
C223  
ATC  
C224  
ATC  
C225  
ATC  
C229, C230, C231, C232  
Panasonic Electronic Components  
Data Sheet  
6 of 9  
Rev. 02.1, 2015-07-29  
PXAC182908FV  
Pinout Diagram (top view)  
Main  
Peak  
V1  
V2  
Pin  
D1  
D2  
G1  
G2  
S
Description  
D1  
D2  
Drain device 1 (Main)  
Drain device 2 (Peak)  
Gate device 1 (Main)  
Gate device 2 (Peak)  
Source (flange)  
S
G1  
G2  
H-34275G-6-2_pd_10-10-2012  
Lead connections for PXAC182908FV  
Data Sheet  
7 of 9  
Rev. 02.1, 2015-07-29  
PXAC182908FV  
Package Outline Specifications  
Package H-37275G-6/2  
30.61  
[1.205]  
(13.72  
[.540])  
2X 2.22  
[.087]  
D
2X 45° x .64  
[.025]  
2X (1.27  
[.050])  
2X 2.29  
[.090]  
2X 30°  
C
L
6X 4.04±0.51  
[.159±.020]  
D1  
G1  
D2  
V1  
V2  
10.16  
[.400]  
9.14  
[.360]  
(18.24  
[.718])  
C
L
G2  
+.38  
4X R0.51  
-.13  
C
C
L
L
+.015  
R.020  
[
]
-.005  
4X 12.45  
[.490]  
2X 26.16  
[1.030]  
+0.25  
-0.13  
4.58  
+.010  
.180  
[
]
-.005  
31.24±0.28  
[1.230±.011]  
SPH 2.134  
[.084]  
C
L
(1.63  
[0.064])  
H-37275G-6/2_sl_po_03_07-25-2013  
32.26  
[1.270]  
S
Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances 0.127 [.005] unless specified otherwise.  
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – VDD.  
5. Lead thickness: 0.13 + 0.051/–0.025 mm [0.005+0.002/–0.001 inch].  
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
8 of 9  
Rev. 02.1, 2015-07-29  
PXAC182908FV V1  
Revision History  
Revision  
Date  
Data Sheet Type  
Advance  
Page  
All  
Subjects (major changes since last revision)  
Data Sheet reflects advance specification for product development  
Updated thermal resistance  
01  
2015-01-08  
2015-01-29  
2015-07-07  
01.1  
02  
Advance  
2
Production  
All  
All  
Data Sheet reflects released product specification  
Revised all data and includes updated final specs, typical performance graphs, loadpull, refer-  
ence circuit, package outline  
02.1  
2015-07-29  
Production  
4
Corrected Drain Eff to PAE in Load Pull tablehead  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
(highpowerRF@infineon.com)  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2015-07-29  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2015 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-  
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device  
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
9 of 9  
Rev. 02.1, 2015-07-29  
厂商 型号 描述 页数 下载

ETC

 		PXA.M0.5GG.NB [ CONN RCPT FMALE 5POS GOLD SOLDER ] 76 页

MARVELL

 		PXA1088 WCDMA / TD -SCDMA通信处理器[ WCDMA/TD-SCDMA Communication Processor ] 2 页

MARVELL

 		PXA168 高性能，高集成度处理器可扩展到1.2 GHz的对成本敏感的，智能消费类和嵌入式设备[ High Performance, Highly Integrated Processor Scalable to 1.2 GHz for Cost-Sensitive, Intelligent Consumer and Embedded Devices ] 2 页

INTEL

 		PXA210 英特尔-R PXA250和PXA210应用处理器[ Intel-R PXA250 and PXA210 Applications Processors ] 46 页

INTEL

 		PXA250 英特尔-R PXA250和PXA210应用处理器[ Intel-R PXA250 and PXA210 Applications Processors ] 46 页

INTEL

 		PXA255 PXA255处理器[ PXA255 Processor ] 40 页

INTEL

 		PXA270 电气，机械和热规格[ Electrical, Mechanical, and Thermal Specification ] 126 页

ACTEL

 		PXA270 为PXA270平台的存储解决方案[ Storage solution for PXA270 platform ] 2 页

ACTEL

 		PXA300 为Marvell公司的PXA300 / 310平台存储解决方案[ Storage Solution for Marvell’s PXA300/310 Platform ] 2 页

MARVELL

 		PXA300 可扩展性能高达624兆赫的高性价比和高能效的智能手机，嵌入式解决方案，以及手持设备[ Scalable Performance up to 624 MHz for Cost-Effective and Power-Efficient Smartphones, Embedded Solutions, and Handheld Devices ] 4 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.192601s