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PXAC192908FVV1R0XTMA1

型号：

PXAC192908FVV1R0XTMA1

品牌：

INFINEON[ Infineon ]

页数：

9 页

PDF大小：

1060 K

下载PDF手册
PXAC192908FV  
Thermally-Enhanced High Power RF LDMOS FET  
240 W, 28 V, 1930 – 1995 MHz  
Description  
PXAC192908FV  
Package H-37275G-6/2  
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetri-  
cal design intended for use in multi-standard cellular power amplifier  
applications in the 1930 to 1995 MHz frequency band. Features  
include dual-path design, high gain and thermally-enhanced package  
with earless flanges. Manufactured with Infineon's advanced LDMOS  
process, this device provides excellent thermal performance and  
superior reliability.  
Features  
Single-carrier WCDMA Drive-up  
•
•
Broadband internal input and output matching  
Asymmetric Doherty design  
VDD = 28 V, IDQ = 600 mA, ƒ = 1990 MHz,  
3GPP WCDMA signal, PAR = 10 dB,  
3.84 MHz BW  
- Main: P  
- Peak: P  
= 120 W Typ  
= 220 W Typ  
1dB  
1dB  
24  
20  
16  
12  
8
60  
40  
20  
0
•
Typical Pulsed CW performance, 1990 MHz, 28 V,  
combined outputs  
Efficiency  
- Output power at P  
- Efficiency = 54%  
- Gain = 14 dB  
= 240 W  
1dB  
Gain  
•
Capable of handling 10:1 VSWR @28 V, 240 W  
(CW) output power  
-20  
-40  
-60  
•
•
Integrated ESD protection  
PAR @ 0.01% CCDF  
Human Body Model, Class 2 (per ANSI/ESDA/  
JEDEC JS-001)  
4
•
•
Low thermal resistance  
0
c192908fc_g1  
Pb-free and RoHS compliant  
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)  
= 28 V, I = 0.6 A, V = 0.55 V, P = 70 W avg, ƒ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,  
V
DD  
DQ  
GS(PEAK)  
OUT  
1
peak/average = 10 dB @ 0.01% CCDF  
Characteristic  
Gain  
Symbol  
Min  
13  
Typ  
14  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
Adjacent Channel Power Ratio  
hD  
45  
49  
—
%
ACPR  
—
–28  
–25  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 9  
Rev. 02.3, 2016-06-17  
PXAC192908FV  
DC Characteristics (each side)  
Characteristic  
Conditions  
Symbol  
Min  
65  
Typ  
—
Max  
—
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V(  
BR)DSS  
DS  
V
= 28 V, V = 0 V  
I
I
—
—
1
µA  
µA  
W
DS  
DS  
GS  
DSS  
V
= 63 V, V = 0 V  
—
—
10  
GS  
DSS  
On-State Resistance (main)  
(peak)  
V
GS  
= 10 V, V = 0.1 V  
R
R
—
0.11  
0.06  
2.65  
0.55  
—
—
DS  
DS(on)  
DS(on)  
V
GS  
= 10 V, V = 0.1 V  
—
—
W
DS  
Operating Gate Voltage (main)  
(peak)  
V
= 28 V, I  
= 28 V, I  
= 0.6 A  
= 0 A  
V
GS  
2.5  
0.45  
—
2.75  
0.75  
1
V
DS  
DS  
DQ  
DQ  
V
V
GS  
V
Gate Leakage Current  
V
GS  
= 10 V, V = 0 V  
I
GSS  
µA  
DS  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Operating Voltage  
V
DSS  
V
–6 to +10  
0 to +32  
225  
V
GS  
DD  
V
V
Junction Temperature  
Storage Temperature Range  
T
°C  
J
T
STG  
–65 to +150  
0.32  
°C  
Thermal Resistance (Doherty, T  
= 70°C, 200 W CW, 1960 MHz,  
R
qJC  
°C/W  
CASE  
28V, I  
= 600 mA, V  
= 0.55 V)  
DQ (main)  
GS (peak)  
Ordering Information  
Type and Version  
Order Code  
Package Description  
Shipping  
PXAC192908FV V1 R0  
PXAC192908FV V1 R250  
PXAC192908FVV1R0XTMA1  
PXAC192908FVV1R250XTMA1  
H-37275G-6/2, earless flange  
H-37275G-6/2, earless flange  
Tape & Reel, 50 pcs  
Tape & Reel, 250 pcs  
Data Sheet  
2 of 9  
Rev. 02.3, 2016-06-17  
PXAC192908FV  
Typical Performance (data taken in a production Doherty test fixture)  
Single-carrier WCDMA  
Broadband Performance  
VDD = 28 V, IDQ = 600 mA, POUT = 48.45dBm,  
3GPP WCDMA signal, PAR = 10 dB  
Single-carrier WCDMA  
Broadband Performance  
VDD = 28 V, IDQ = 600 mA, POUT = 48.45dBm,  
3GPP WCDMA signal, PAR = 10 dB  
20  
18  
16  
14  
12  
10  
55  
45  
35  
25  
15  
5
-10  
-5  
-15  
-20  
-25  
-30  
-35  
-40  
-10  
-15  
-20  
-25  
-30  
-35  
Return Loss  
Efficiency  
Gain  
ACP Up  
c192908fc_g2  
c192908fc_g3  
1750  
1850  
1950  
2050  
2150  
1750  
1850  
1950  
2050  
2150  
Frequency (MHz)  
Frequency (MHz)  
Pulsed CW Performance  
VDD = 28 V, IDQ = 600mA  
Single-carrier WCDMA 3GPP Drive-up  
VDD = 28 V, IDQ = 600 mA,  
3GPP WCDMA signal, PAR = 10 dB,  
10 MHz carrier spacing, BW = 3.84 MHz  
1930 MHz  
1960 MHz  
1990 MHz  
20  
60  
40  
20  
0
-20  
-30  
-40  
-50  
-60  
15  
10  
5
Gain  
Efficiency  
1930 ACPL  
1930 ACPU  
1960 ACPL  
1960 ACPU  
1990 ACPL  
1990 ACPU  
c192908fc_g4  
c192908fc_g5  
25  
30  
35  
40  
45  
50  
55  
28 32 36 40 44 48 52 56 60  
Output Power (dBm)  
Average Output Power (dBm)  
Data Sheet  
3 of 9  
Rev. 02.3, 2016-06-17  
PXAC192908FV  
Typical Performance (cont.)  
Pulsed CW Performance  
at various VDD  
IDQ = 600 mA, ƒ = 1990 MHz  
Small Signal CW Performance  
Gain & Input Return Loss  
VDD = 28 V, IDQ = 750 mA  
20  
15  
10  
5
60  
40  
20  
0
20  
18  
16  
14  
12  
-2  
Efficiency  
IRL  
-6  
-10  
-14  
-18  
Gain  
VDD = 24 V  
VDD = 28 V  
Gain  
V
DD = 32 V  
c192908fc_g6  
c192908fc_g7  
1750 1800 1850 1900 1950 2000 2050  
28  
36  
44  
52  
60  
Output Power (dBm)  
Frequency (MHz)  
Load Pull Performance  
Main Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, V  
= 28 V, I  
= 600 mA  
DQ  
DD  
P
1dB  
Max Output Power  
Max PAE  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
[dB]  
P
P
[W]  
PAE  
[%]  
Gain  
[dB]  
P
P
OUT  
PAE  
[%]  
OUT  
OUT  
OUT  
[dBm]  
51.10  
51.10  
50.91  
[dBm]  
50.12  
50.08  
49.78  
[W]  
102.8  
101.9  
95.1  
1930  
8.0 – j11.0  
2.1 – j4.7  
2.1 – j4.7  
2.1 – j4.8  
18.0  
18.2  
18.3  
128.8  
128.8  
123.3  
50.4  
51.0  
49.7  
3.6 – j2.7  
3.6 – j2.9  
3.63 – j2.6  
20.2  
20.2  
20.5  
62.5  
61.6  
61.3  
1960 11.9 – j11.9  
1990 18.0 – j10.4  
Peak Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, V  
=28 V, I  
= 90 mA  
DQ  
DD  
P
1dB  
Max Output Power  
Max PAE  
Zs  
[W]  
Zl  
[W]  
Zl  
[W]  
Freq  
[MHz]  
Gain  
[dB]  
P
P
[W]  
PAE  
[%]  
Gain  
[dB]  
P
P
OUT  
[W]  
PAE  
[%]  
OUT  
OUT  
OUT  
[dBm]  
54.24  
54.16  
54.08  
[dBm]  
53.04  
52.90  
52.88  
1930  
1960  
1990  
1.7 – j5.3  
2.0 – j5.8  
3.2 – j6.9  
5.3 – j3.8  
5.3 – j3.7  
6.3 – j2.8  
18.0  
18.4  
18.7  
265.5  
260.6  
255.9  
55.6  
55.7  
54.7  
2.9 – j2.0  
2.9 – j2.2  
2.9 – j2.2  
19.6  
20.1  
20.3  
201.4  
195.0  
194.1  
66.3  
66.0  
65.0  
Data Sheet  
4 of 9  
Rev. 02.3, 2016-06-17  
PXAC192908FV  
Reference Circuit , 1930 – 1990 MHz  
PXAC192908FV_IN_04_D  
PXAC192908FV_OUT_04_D  
R801  
C801  
R803  
C803 C802  
C205 C206 C207  
C208  
S3  
C204  
C203  
S1  
S2  
R103  
C217  
C102 C101  
C230  
C229  
C202  
C201  
R102  
R101  
C218  
C219  
C220 C221  
C103  
C222  
C104  
C105  
RF  
IN  
RF  
OUT  
U1  
C227  
C107 C106  
C225  
C223  
C110  
R107  
C224  
C226  
R104  
C109 C108  
C209  
C210  
R105  
C232  
C231  
C211  
C212  
S4  
C228  
C213 C214 C215  
C216  
R106  
RO4350_0 .508  
(61)  
RO4350_0 .508  
(194)  
x a c 1 9 2 9 0 8 f v _ C D _ 1 2 - 0 9 - 2 0 1 4  
p
Reference circuit assembly diagram (not to scale)  
Data Sheet  
5 of 9  
Rev. 02.3, 2016-06-17  
PXAC192908FV  
Reference Circuit (cont.)  
Reference Circuit Assembly  
DUT  
PXAC192908FV V1  
Test Fixture Part No.  
LTA/PXAC192908FV V1  
PCB  
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1930 – 1990 MHz  
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower  
Components Information  
Component  
Input  
Description  
Suggested Manufacturer  
P/N  
C101, C108, C105  
C102, C109  
C103  
Capacitor, 18 pF  
Capacitor, 10 µF  
Capacitor, 1 pF  
Capacitor, 1.2 pF  
Capacitor, 0.5 pF  
Capacitor, 1.1 pF  
Capacitor, 1000 pF  
Resistor, 5600 W  
Resistor, 1000 W  
Resistor, 5.1 W  
Resistor, 50 W  
ATC  
ATC600F180JT250X  
LLL31BC70G106MA01L  
ATC600F1R0CT250X  
ATC600A1R2CT250X  
ATC600F0R5CT250X  
ATC600F1R1CT250X  
ECJ-1VB1H102K  
ERJ-8RQJ5R6V  
ERJ-8GEYJ102V  
ERJ-8GEYJ5R1V  
C16A50Z4  
Murata  
ATC  
C104  
ATC  
C106  
ATC  
C107  
ATC  
C801, C802, C803  
R101, R104  
R102, R105  
R103, R106  
R107  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Richardson  
R801  
Resistor, 1300 W  
Resistor, 1200 W  
Resistor, 5100 W  
Voltage Regulator  
Transistor  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Texas Instruments  
ERJ-3GEYJ132V  
ERJ-3GEYJ122V  
ERJ-8GEYJ512V  
LM78L05ACM  
R802  
R803  
S1  
S2  
Infineon Technologies  
Bourns Inc.  
BCP56  
S3, S4  
Potentiometer, 2k W  
Hybrid coupler  
3224W-1-202E  
U1  
Anaren  
X3C19P1-04S  
Output  
C201, C202, C203, C204, Capacitor, 10 µF  
C205, C206, C207, C208,  
C209, C210, C211, C212,  
Taiyo Yuden  
ATC  
UMK325C7106MM-T  
C213, C214, C215, C216  
C217, C224, C225, C227, Capacitor, 18 pF  
C228  
ATC600F180JT250X  
C218  
Capacitor, 0.5 pF  
Capacitor, 1.8 pF  
Capacitor, 0.8 pF  
Capacitor, 0.4 pF  
Capacitor, 0.2 pF  
Capacitor, 1.0 pF  
Capacitor, 220 µF  
ATC  
ATC600F0R5CT250X  
ATC600F1R8CT250X  
ATC600F0R8CT250X  
ATC600F0R4CT250X  
ATC600F0R2CT250X  
ATC600F1R0CT250X  
EEE-FP1V221AP  
C219  
ATC  
C220  
ATC  
C221  
ATC  
C222, C226  
C223  
ATC  
ATC  
C229, C230, C231, 232  
Panasonic Electronic Components  
Data Sheet  
6 of 9  
Rev. 02.3, 2016-06-17  
PXAC192908FV  
Pinout Diagram (top view)  
Main  
Peak  
V1  
V2  
D1  
D2  
Pin  
D1  
D2  
G1  
G2  
S
Description  
Drain device 1 (Main)  
Drain device 2 (Peak)  
Gate device 1 (Main)  
Gate device 2 (Peak)  
Source (flange)  
S
G1  
G2  
H-34275G-6-2_pd_10-10-2012  
Lead connections for PXAC192908FV  
Data Sheet  
7 of 9  
Rev. 02.3, 2016-06-17  
PXAC192908FV  
Package Outline Specifications  
Package H-37275G-6/2  
30.61  
[1.205]  
(13.72  
[.540])  
2X 2.22  
[.087]  
D
2X 45° x .64  
[.025]  
2X (1.27  
[.050])  
2X 2.29  
[.090]  
2X 30°  
C
L
6X 4.04±0.51  
[.159±.020]  
D1  
G1  
D2  
V1  
V2  
10.16  
[.400]  
9.14  
[.360]  
(18.24  
[.718])  
C
L
G2  
+.38  
4X R0.51  
-.13  
C
C
L
L
+.015  
R.020  
[
]
-.005  
4X 12.45  
[.490]  
2X 26.16  
[1.030]  
+0.25  
-0.13  
4.58  
+.010  
.180  
[
]
-.005  
31.24±0.28  
[1.230±.011]  
SPH 2.134  
[.084]  
C
L
(1.63  
[0.064])  
H-37275G-6/2_sl_po_03_07-25-2013  
32.26  
[1.270]  
S
Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances 0.127 [.005] unless specified otherwise.  
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source; V1, V2 – VDD.  
5. Lead thickness: 0.13 + 0.051/–0.025 mm [0.005+0.002/–0.001 inch].  
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
8 of 9  
Rev. 02.3, 2016-06-17  
PXAC192908FV V1  
Revision History  
Revision  
Date  
Data Sheet Type  
Advance  
Page  
All  
2
Subjects (major changes since last revision)  
Data Sheet reflects advance specification for product development  
Updated main and peak side of pinout diagram, added thermal resistance  
Updated thermal resistance  
01  
2014-06-24  
2014-08-27  
2014-09-24  
2014-12-08  
2015-01-13  
2015-07-14  
2016-06-17  
01.1  
01.2  
02  
Advance  
Advance  
2
Production  
Production  
Production  
Production  
All  
4
Data Sheet reflects released product specification  
Revised IDQ on main side of Load Pull Performance  
Updated P1dB main & peak in Features  
02.1  
02.2  
02.3  
1
2
Updated ordering information to include R0  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
highpowerRF@infineon.com  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2016-06-17  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2014 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-  
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device  
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
9 of 9  
Rev. 02.3, 2016-06-17  
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