IXYS
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VWM200-01P
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[ Power Field-Effect Transistor, 210A I(D), 100V, 0.0052ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-24 ] |
2 页
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IXYS
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VWM270-0075X2
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[ Power Field-Effect Transistor, 270A I(D), 75V, 0.0021ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-24 ] |
6 页
|
|
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IXYS
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VWM350-0075P
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三相带沟槽MOSFET的全桥[ Three phase full bridge with Trench MOSFETs ] |
2 页
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