VWM 350-0075P
VDSS = 75 V
RDSon = 2.3 mΩ
ID25 = 340 A
Three phase full bridge
with Trench MOSFETs
L+
Preliminary data
T1
T2
T3
G1
G3
S3
G5
S5
S1
L1
L2
L3
T4
T5
T6
G2
G4
S4
G6
S6
S2
L-
MOSFETs T1 - T6
Applications
AC drives
Symbol
VDSS
Conditions
Maximum Ratings
• in automobiles
-electric power steering
-starter generator
TVJ = 25°C to 150°C
75
V
V
VGS
±20
-etc...
ID25
ID80
TC = 25°C
TC = 80°C
340
250
A
A
• in industrial vehicles
-propulsion drives
-fork lift drives
ID25
ID80
TC = 25°C (diode)
TC = 80°C (diode)
340
250
A
A
• in battery supplied equipment
Features
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
• MOSFETs in trench technology:
-low RDSon
min.
typ. max.
RDSon
VGSth
IDSS
VGS = 10 V;ID = ID80
2.3
3.3 mΩ
-optimized intrinsic reverse diode
• package:
VDS = 20 V;ID = 2 mA
2
4
V
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
with optimized heat transfer
VDS = 75V;VGS = 0 V; TVJ = 25°C
TVJ = 125°C
0.02 mA
mA
0.25
IGSS
VGS = ±20 V; VDS = 0 V
0.2 µA
Qg
Qgs
Qgd
450
60
170
nC
nC
nC
VGS= 10 V; VDS = 0.5 • VDSS; ID = 175A
td(on)
tr
td(off)
tf
60
170
320
200
ns
ns
ns
ns
VGS= 10 V; VDS = 0.5 • VDSS
ID = 175 A; RG = 2.2 Ω
;
VF
trr
(diode) IF = 175 A; VGS= 0 V
1.1
90
1.6
V
(diode) IF = 40 A; -di/dt = 200 A/µs; VDS= 30 V
ns
RthJC
RthJH
0.26 K/W
K/W
with heat transfer paste
0.51
Ratings and characteristic values are per individual MOSFET
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
1 - 2
IXYS Semiconductor GmbH
IXYS Corporation
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
