Advanced Technical Information
VWM 200-01P
VDSS = 100 V
RDSon = 3.6 mΩ
ID25 = 210 A
Three phase full bridge
with Trench MOSFETs
L+
G3
S3
G5
S5
G1
S1
L1
L2
L3
G4
S4
G6
S6
G2
S2
L-
MOSFETs
Applications
AC drives
Symbol
VDSS
Conditions
Maximum Ratings
• in automobiles and trucks
-electric power steering
-starter generator
TVJ = 25°C to 150°C
100
20
V
V
VGS
-etc...
ID25
ID80
TC = 25°C
TC = 80°C
210
170
A
A
• in industrial vehicles
-propulsion drives
-fork lift drives
ID25
ID80
TC = 25°C (diode)
TC = 80°C (diode)
210
170
A
A
• in battery supplied equipment
Features
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
• MOSFETs in trench technology:
-low RDSon
min.
typ. max.
RDSon
VGSth
IDSS
VGS = 10 V;ID = 100 A
VDS = 20 V;ID = 2 mA
3.6
5.2 mΩ
-optimized intrinsic reverse diode
• package:
2
4
V
-high level of integration
-solder terminals for PCB mounting
VDS = 100 V;VGS = 0 V; TVJ = 25°C
TVJ = 125°C
0.02 mA
mA
0.25
-isolated DCB ceramic base plate
with optimized heat transfer
IGSS
VGS = 20 V; VDS = 0 V
0.2 µA
Qg
Qgs
Qgd
430
90
180
nC
nC
nC
VGS= 10 V; VDS = 80 V; ID = 200 A
td(on)
tr
td(off)
tf
40
100
260
100
ns
ns
ns
ns
VGS= 10 V; VDS = 50 V;
ID = 50 A; RG = 2.7 Ω
VF
trr
(diode) IF = 100 A; VGS= 0 V
1.0
1.5
V
(diode) IF = 40 A; -di/dt = 200 A/µs; VDS= 30 V
100
ns
RthJC
RthJH
0.26 K/W
K/W
with heat transfer paste
0.51
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
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