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VWM270-0075X2

型号：

VWM270-0075X2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

238 K

下载PDF手册
VWM 270-0075X2  
VDSS = 75V  
ID25 = 270A  
RDS(on) = 2.1mΩ  
Three phase full bridge  
with Trench MOSFETs  
L+  
G5  
S5  
G3  
S3  
T1  
T3  
T5  
G1  
S1  
L1  
L2  
L3  
G4  
S4  
G6  
S6  
T2  
T6  
T4  
G2  
S2  
L-  
Aplications  
MOSFET T1 - T6  
AC dves  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
•
•
•
in automobiles  
- electric power steering  
- starter generator  
in industrial vehicles  
- propulsion drives  
- fork lift drives  
TVJ = 25°C to 150°C  
75  
20  
V
VGS  
V
ID25  
ID80  
TC = 25°C  
TC = 80°C  
270  
5  
A
A
IF25  
IF80  
TC = 25°C (diode)  
TC = 80°C (diode)  
280  
180  
A
A
in battery supplied equipment  
Features  
Symbol  
Conditions  
Chacteristic Values  
min. typ. max.  
•
MOSFETs in trench technology:  
- low RDSon  
(TVJ = 25°C, unless otherwise specified)  
1)  
- optimized intrinsic reverse diode  
package:  
- high level of integration  
- solder terminals for PCB mounting  
- isolated DCB ceramic base plate  
with optimized heat transfer  
RDSon  
VGS = 10 V; ID = 100 A; on chip level  
VDS = 20 V; ID = 0.5 mA  
2.1  
4
mW  
V
•
VGS(th)  
2
VDS = 75 V; VGS = 0 V  
TVJ = 25°
TVJ = 125°C  
10  
300  
µA  
µA  
IDSS  
IGSS  
VGS 20 V; VDS = 0 V  
=
0.4  
µA  
Qg  
Qgs  
Qgd  
360  
105  
80  
nC  
nC  
nC  
VGS = 10 V; VDS = ½VDSS; ID = 230 A  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
Erec  
140  
225  
380  
265  
0.23  
3.49  
0.04  
ns  
ns  
ns  
inductive load  
VGS = 10 V; VDS = 37 V  
ID = 230 A; RG = 10 Ω  
RG = RG ext + Rout driver  
ns  
TVJ = 25°C  
mJ  
mJ  
mJ  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
Erec  
145  
240  
410  
230  
0.3  
ns  
ns  
ns  
inductive load  
VGS = 10 V; VDS = 37 V  
ID = 230 A; RG = 10 Ω  
RG = RG ext + Rout driver  
ns  
TVJ = 125°C  
mJ  
mJ  
mJ  
2.95  
0.06  
RthJC  
RthJH  
1)  
0.44 K/W  
K/W  
with heat transfer paste (IXYS test setup)  
= ID·(RDS(on) + 2RPin to Chip)  
0.66  
V
DS  
20110321a  
© 2011 IXYS All rights reserved  
1 - 6  
VWM 270-0075X2  
Source-Drain Diode  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
VSD  
IF = 100 A; VGS = 0 V  
1.1  
V
trr  
QRM  
IRM  
85  
2.2  
38  
ns  
µC  
A
IF = 230 A; VR = 37 V  
-diF /dt = 820 A/µs: RG = 10 Ω  
Module  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-40...+175  
-40...+125  
°C  
°C  
VISOL  
Md  
IISOL < 1 mA, 50/60 Hz; t = 1 min  
Mounting torque (M5)  
500  
V~  
2 - 2.5  
Nm  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
1)  
Rpin to chip  
0.7  
W  
Weight  
80  
1)  
V
= ID·(RDS(on) + 2RPin to Chip)  
DS  
20110321a  
© 2011 IXYS All rights reserved  
2 - 6  
VWM 270-0075X2  
Dimensions in mm (1 mm = 0.0394“)  
65  
93  
38  
40.4+0.3  
Detail Y  
M 5:1  
dX2  
4x45°  
Ø1.5 (DIN 46 431)  
dX1  
¨0.5 0.2  
X
0.8  
R1  
1
2
3
1
2
3
4
5
6
7
4
5
6
7
8
9
10  
8
9
10  
Detail Z  
M 2:1  
Ø 6.1  
Ø 2.5  
40 0.15  
78.5 0.3  
80 0.3  
0.5  
Ø 2.1  
20110321a  
© 2011 IXYS All rights reserved  
3 - 6  
VWM 270-0075X2  
500  
400  
300  
200  
100  
0
500  
400  
300  
200  
100  
0
8 V  
VGS  
=
8 V  
VGS = 15/10/9 V  
15/10/9 V  
7 V  
7 V  
T
= 25°C  
J
ID  
ID  
T
= 25°C  
J
[A]  
[A]  
6 V  
5 V  
6 V  
5 V  
0.0  
0.5  
1.0  
1.5  
2.0  
0
1
2
3
4
VDS  
VDS [V]  
[V]  
Fig. 1 Typ. Output Characteristics  
Fig. 2 Typ. Extended Output Characteristics  
500  
400  
300  
200  
100  
0
2.6  
2.4  
2.2  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10 V  
VGS = 15/10/9 V  
8 V  
T
= 150°C  
J
ID = 460 A  
7 V  
ID  
RDSon  
ID = 230 A  
[A]  
norm.  
6 V  
5 V  
0.0  
0.5  
1.0  
1.5  
2.0  
-50 -25  
0
25 50 75 100 125 150 175  
VDS [V]  
TJ [°C]  
Fig. 3 Typ. Output Characistic
Fig. 4 RDS(on) Normalized to ID = 230 A  
Value vs. Junction Temperature  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
VDS = 38 V  
ID = 230 A  
IG = 10 mA  
ID  
VGS  
TJ = 150°C  
[A]  
[V]  
25°C  
-40°C  
0
3.5  
0
100  
200  
300  
400  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS  
[V]  
QG [nC]  
Fig. 5  
Typ. Transfer Characteristics  
Fig. 6  
Typ. Turn-on Gate Charge  
20110321a  
© 2011 IXYS All rights reserved  
4 - 6  
VWM 270-0075X2  
1.2  
1.1  
1.0  
0.9  
0.8  
120  
60  
50  
40  
30  
20  
10  
0
IDSS = 0.5 mA  
100  
trr  
80  
VDS  
Irr  
trr  
47 Ω  
22 Ω  
10 Ω  
4.7 Ω  
60  
40  
20  
0
[V]  
[A]  
[ns]  
Irr  
normalized  
-50 -25  
0
25  
50  
75 100 125 150  
300 400 500 600 700 800 900 1000  
TVJ [°C]  
diF /dt [A/µs]  
Fig. 7  
Typ. Drain source breakdown voltage  
VDSS versus junction temperature  
Fig. 8  
Typ. Reverse recovery time and current  
of the body diode versus diF /dt  
12  
10  
8
600  
500  
500  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
t
r
RG  
VDS  
=
=
10 Ω  
37 V  
400  
300  
200  
100  
0
VGS = 10/0 V  
t
d(off)  
TVJ = 125°C  
400  
300  
200  
100  
0
RG  
DS  
=
=
10 Ω  
37 V  
Eon  
Eoff  
t
t
f
t
E
rec(off)  
x10  
VGS = 10/0 V  
TVJ = 125°C  
[ns]  
t
d(on)  
[mJ]  
[ns]  
[mJ]  
4
2
E
on  
E
off  
0
0
100  
200  
300  
ID [A]  
400  
500  
0
100  
200  
300  
ID [A]  
400  
5
Fig. 9  
Typ. turn-on energy & switchinmes  
vs. drain current, inductive switching  
Fig. 10 Typ. turn-off energy & switching times  
vs. drain current, inductive switching  
1000  
10  
8
500  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
ID = 230 A  
VDS 37 V  
ID = 230 A  
V7 V  
=
t
=
d(off)  
VGS = 0/10 V  
TVJ = 125°C  
800  
600  
400  
200  
0
400  
300  
VGS 0/10 V  
TVJ = 5°C  
10x E  
rec (off)  
t
r
Eon  
,
6
t
Eoff  
t
d(on)  
Erec  
t
[ns]  
200  
[ns]  
4
[mJ]  
E
[mJ]  
off  
t
f
2
100  
0
E
on  
0
0
5
10  
RG [Ω]  
15  
20  
25  
4
8
12  
RG [Ω]  
16  
20  
24  
Fig. 11 Typ. turn-on energy & switching times  
vs. gate resistor, inductive switching  
Fig. 12 Typ. turn-off energy & switching times  
vs. gate resistor, inductive switching  
20110321a  
© 2011 IXYS All rights reserved  
5 - 6  
VWM 270-0075X2  
100000  
10000  
500  
400  
300  
200  
100  
0
f = 1 MHz  
Ciss  
TJ = 150°C  
125°C  
25°C  
IS  
C
Coss  
[A]  
[pF]  
1000  
100  
Crss  
0
10  
20  
30  
40  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VDS [V]  
VSD [V]  
Fig. 14Typ. Forward Voltage Drop of Intrinsic Diode  
Fig. 13 Typ. Capacitances  
0.5  
0.4  
0.3  
Zth  
[K/W]  
0.2  
0.1  
0.0  
1
10  
100  
1000  
10000  
t [ms]  
Fig. 15 Typ. TransieThermal Resistance per MOSFET  
20110321a  
© 2011 IXYS All rights reserved  
6 - 6  
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