WTD772
WTD882
PNP/NPN Epitaxial Planar Transistors
TO-252/D-PAK
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-B ase Voltage
Emitter-B ase Voltage
Collector Current (DC)
Symbol
PNP/WTD772
Unit
Vdc
Vdc
Vdc
Adc
NPN/WTD882
V
30
40
5.0
3.0
-30
-40
CEO
V
CB O
V
-5.0
-3.0
EB O
I
C(DC)
Collector Current (Pulse) (1)
(Pulse)
-7.0
-0.6
Adc
Adc
I
C
7.0
0.6
I
(Pulse)
B ase Current
B
Total Device Dissipation Tc=25°C
10
P
D
j
W
1.25
T =25°C
A
T
Junction Temperature
S torage, Temperature
150
C
C
Tstg
-55 to +150
Device Marking
WTD772=B 772
,
WTD882=D882
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
-
Collector-Emitter B reakdown Voltage (I = -10/ 10 mAdc, I =0)
V
V
-30/ 30
Vdc
C
B
(B R)CEO
-
-
-40/ 40
Vdc
Collector-B ase B reakdown Voltage (I = -100/ 100 µAdc, I =0)
C
E
(B R)CB O
Vdc
V
-5.0/ 5.0
Emitter-B ase B reakdown Voltage (I = -100/ 100 µAdc, I =0)
(B R)EB O
E
C
uAdc
I
I
I
CE0
CB O
EB O
-1.0/ 1.0
-1.0/ 1.0
-1.0/ 1.0
Collector Cutoff Current (V = -30/ 30 Vdc, I =0)
-
-
CE
B
uAdc
uAdc
Collector Cutoff Current (V = -40/ 40 Vdc, I =0)
CB
E
-
d
Emitter Cutoff Current (V = -6.0/ 6.0V c, I =0)
EB
C
NOTE: 1.PW 350us, duty cycle 2%
WEITRON
http://www.weitron.com.tw
