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WTD1386

型号:

WTD1386

描述:

PNP外延平面晶体管[ PNP EPITAXIAL PLANAR TRANSISTOR ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

4 页

PDF大小:

179 K

WTD1386  
PNP EPITAXIAL PLANAR TRANSISTOR  
P b  
Lead(Pb)-Free  
1.BASE  
3
2.COLLECTOR  
3.EMITTER  
2
1
Features:  
* Low V  
= -0.55(Typ.) (I /I =-4A/-0.1A)  
C B  
CE(sat)  
D-PAK(TO-252)  
* Excellent DC Current Gain Characteristics  
Mechanical Data:  
* Case : Molded Plastic  
* Weight : 0.925 grams  
ABSOLUTE MAXIMUM RATINGS(T =25ºC)  
A
Rating  
Symbol  
Value  
Unit  
V
-30  
V
V
V
Collector to Base Voltage  
CBO  
V
-20  
-6  
CEO  
Collector to Emitter Voltage  
Collector to Base Voltage  
V
EBO  
I (DC)  
-5  
C
A
Collector Current  
I (Pulse)  
C
-10  
T = 25°C  
C
P
Total Device Disspation  
Junction Temperature  
Storage Temperature  
20  
W
˚C  
˚C  
D
+150  
Tj  
-55 to +150  
Tstg  
Device Marking  
WTD1386 = 1386  
WEITRON  
http://www.weitron.com.tw  
1/4  
09-Sep-05  
WTD1386  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min  
Typ  
Max  
Unit  
Collector-Base Breakdown Voltage  
BV  
-30  
-
-
V
CBO  
I =-50µA, I =0  
C
E
Collector-Emitter Breakdown Voltage  
I =-1mA, I =0  
BV  
BV  
-20  
-6  
-
-
-
-
V
V
CEO  
C
B
Emitter-Base Breakdown Voltage  
I =-50µA, I =0  
EBO  
E
C
Collector Cut-Off Current  
=-20V, I =0  
I
-
-
-
-
-500  
-500  
nA  
nA  
CBO  
V
CB  
E
Emitter-Cut-Off Current  
V =-5V, I =0  
I
EBO  
EB  
C
ON CHARACTERISTICS1  
DC Current Gain  
h
82  
-
-
-
580  
-1.0  
-
FE  
V
CE  
=-2V, I =-0.5A  
C
Collector-Emitter Saturation Voltage  
I =-4A, I =-0.1A  
V
V
CE(sat)  
C
B
Note 1.Pulse Test : Pulse width ≤ 380µs, Duty cycle ≤ 2%.  
DYNAMIC CHARACTERISTICS  
Transition Frequency  
f
-
-
120  
60  
-
-
MHz  
pF  
T
V
CE  
=-6V, I =50mA, f=30MHz  
E
Output Capacitance  
=-20V, I =0, f=1MHz  
C
ob  
V
CB  
E
CLASSIFICATION OF h  
FE  
Rank  
P
Q
R
E
Range  
82 - 180  
120 - 270  
180 - 390  
370 - 580  
WEITRON  
http://www.weitron.com.tw  
2/4  
09-Sep-05  
WTD1386  
1000  
1000  
100  
VCE(sat)@IC=20IB  
hFE@VCE=2V  
VCE(sat)@IC=40IB  
10  
1
100  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
Collector Current-IC (mA)  
Collector Current-IC (mA)  
Fig.2 Saturation Voltage & Collector Current  
Fig.1 Current Gain & Collector Current  
10000  
1000  
1000  
100  
Cob  
VBE(sat)@IC=20IB  
1
1
1
10  
100  
1000  
10000  
0.1  
1
10  
100  
Collector Current-IC (mA)  
Reverse Biased Voltage (V)  
Fig.3 Saturation Voltage & Collector Current  
Fig.4 Capacitance & Reverse-Biased Voltage  
10  
25  
20  
15  
PT=1mS  
1
PT=100mS  
PT=1S  
10  
5
0.1  
0.01  
0
1
10  
100  
0
20  
40  
60  
80  
100  
120 140 160  
Forward Voltage (V)  
Power Derating  
Fig.6 Safe Operating Area  
Fig.5 T (˚C), Ambient Temperature  
C
WEITRON  
http://www.weitron.com.tw  
3/4  
09-Sep-05  
WTD1386  
TO-252 Outline Dimensions  
unit:mm  
E
TO-252  
G
A
Min  
6.40  
9.00  
0.50  
-
2.20  
0.45  
1.00  
5.40  
0.30  
0.70  
0.90  
Max  
6.80  
10.00  
0.80  
2.30  
2.50  
0.55  
1.60  
5.80  
0.64  
1.70  
1.50  
Dim  
A
B
C
D
E
G
H
J
H
4
J
B
1
2
3
M
K
D
K
L
M
C
L
WEITRON  
http://www.weitron.com.tw  
4/4  
09-Sep-05  
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