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WTD4A60S

型号:

WTD4A60S

描述:

敏感GATE TRIAC[ Sensitive Gate Triac ]

品牌:

WINSEMI[ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]

页数:

5 页

PDF大小:

501 K

WTD4A60S  
Sensitive Gate Triac  
Features  
Repetitive Peak off -State Voltage:600V  
R.M.S On-State Current(IT(RMS)=4A)  
Low On-State Voltage (1.6V(Max.)@ITM  
High Commutation dv/dt  
Sensitive Gate Triggering 4 Mode  
General Description  
Sensitive gate triggering Triac is suitable for direct couplingto  
TTL , CMOS and application such as various logic Functions, low  
power AC switching applications,such as fanspeed,small light  
controllers and home appliance equipment.  
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)  
symbol  
VDRM  
Parameter  
condition  
Ratings  
600  
Units  
Repetitive Peak Off-State Voltage  
V
IT(RMS)  
R.M.S On-State Current  
Tc=109℃  
4.0  
A
One Cycle, 50Hz/60Hz,  
Peak,Non-Repetitive  
ITSM  
Surge On-State Current  
30/33  
A
I2t  
PGM  
PG(AV)  
IGM  
I2t  
4.5  
1.5  
A2s  
W
W
A
Peak Gate Power Dissipation  
Average Gate Power dissipation  
Peak Gate Current  
0.1  
1.0  
VGM  
TJ  
Peak Gate Voltage  
7.0  
V
Operating Junction Temperature  
Storage Temperature  
-40~125  
-40~150  
TSTG  
Thermal Characteristics  
Symbol  
Parameter  
Value  
2.6  
Units  
RӨJC  
Thermal Resistance Junction to case(DC)  
℃/W  
RӨJA  
Thermal resistance Junction to Ambient(DC)  
100  
℃/W  
Rev.A Aug.2010  
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.  
WTD4A60S  
Electrical Characteristics(Tc=25unless otherwise noted)  
Ratin  
Unit  
Symbol  
Items  
conditions  
Min Typ Max  
Repetitive Peak Off-State  
VD=VDRM,Single Phase, Half  
Wave TJ=125℃  
IDRM  
VTM  
-
-
1.0  
mA  
V
Current  
Peak On-State Voltage  
IT=6A,Inst.Measurement  
-
-
1.6  
5
I+  
-
-
-
GT1  
I-  
I-  
-
5
mA  
Gate Trigger Current  
VD=6V,RL=10Ω  
-
-
5
I+  
-
8
-
12  
1.4  
1.4  
1.4  
2.0  
-
GT3  
V+  
-
GT1  
V-GT1  
V-GT3  
-
-
-
V
Gate Trigger Voltage  
VD=6V,RL=10Ω  
-
V+  
-
1.6  
-
GT3  
VGD  
(dv/dt)c  
IH  
Non-Trigger Gate Voltage  
TJ=125℃,VD=1/2VDRM  
0.2  
V
Critical Rate of Rise Off-State TJ=125℃,[di/dt]c=-2.0A/ms,  
5
-
-
-
-
V/µs  
mA  
Voltage at Commutation  
Holding Current  
VD=2/3VDRM  
10  
2/5  
Steady, all for your advance  
WTD4A60S  
Fig1.Gate Characteristics  
Fig.2 On-State Voltage  
Fig.4 On State Current vs.Allowable  
Case Temperature  
Fig.3 On State Current vs.Maximum  
Power Dissipation  
Fig.5 surge On-State Current Rating  
(Non-Repetitive)  
Fig.6 Gate Trigger Voltage vs.  
Junction Temperature  
3/5  
Steady, all for your advance  
WTD4A60S  
Fig.7 Gate Trigger Current vs.  
Junction Temperature  
Fig.8 Transient Thermal Impedance  
Fig.9 Gate Trigger Characteristics Test Circuit  
4/5  
Steady, all for your advance  
WTD4A60S  
TO-252 Package Dimension  
Unit:mm  
5/5  
Steady, all for your advance  
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