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VUE50

型号:

VUE50

描述:

三相整流桥[ Three Phase Rectifier Bridge ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

77 K

VUE 50  
VRRM = 1200 V  
IdAV = 50 A  
Three Phase  
Rectifier Bridge  
trr  
= 40 ns  
5
4
1/2  
4/5  
VRSM  
V
VRRM  
V
Type  
2
1
10  
8
6
1200  
1200  
VUE 50-12NO1  
10  
8
6
Symbol  
IdAV  
Test Conditions  
Maximum Ratings  
Features  
Package with DCB ceramic base plate  
Isolation voltage 3600 V~  
Planar passivated chips  
Leads suitable for PC board soldering  
Creeping and creepage-distance  
fulfils UL 508/CSA 22.2NO14 and  
VDE 0160 requirements  
TK = 85°C, module  
50  
A
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
200  
210  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
185  
195  
A
A
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
200  
180  
A2s  
A2s  
Epoxy meet UL94V-O  
UL registered E72873  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
170  
160  
A2s  
A2s  
Applications  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Output filter for PWM inverter  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Advantages  
IISOL £ 1 mA  
Reduced EMI/RFI  
Easy to mount with two screws  
Space and weight savings  
Md  
Mounting torque  
(M5)  
(10-32UNF)  
2 - 2.5  
18-22  
Nm  
lb.in.  
Weight  
typ.  
35  
g
Improved temperature and power  
cycling  
Dimensions in mm (1 mm = 0.0394")  
Symbol  
IR  
Test Conditions  
Characteristic Values  
typ.  
max  
VR = VRRM  
VR = 0.8 VRRM  
TVJ = 25°C  
TVJ = 125°C  
0.75  
7
mA  
mA  
4
VF  
IF = 30 A;  
TVJ = 25°C  
2.55  
V
VT0  
rT  
For power-loss calculations only  
1.65  
18.2  
V
mW  
RthJS  
per diode,  
per module,  
120° rect.  
120° rect.  
1.5  
0.25  
K/W  
K/W  
IRM  
trr  
IF = 30 A, -diF/dt = 240 A/ms  
VR = 540 V, L £ 0.05 mH, TVJ = 100°C  
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V, TVJ = 25°C  
16  
40  
18  
60  
A
ns  
dS  
dA  
a
Creeping distance on surface  
Creepage distance in air  
Max. allowable acceleration  
12.7  
9.4  
50  
mm  
mm  
m/s2  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
Use output terminals in parallel connections  
© 2000 IXYS All rights reserved  
1 - 2  
VUE 50  
70  
A
60  
A
50  
A
TVJ=100°C  
VR= 540V  
60  
50  
40  
max.  
IF=30A  
IF=60A  
IF=30A  
IF=15A  
50  
40  
30  
20  
10  
0
40  
IRM  
IF  
IdAVM  
TVJ= 25°C  
TVJ=150°C  
30  
20  
10  
0
30  
20  
10  
0
typ.  
V
°C  
75 100 150  
A/ s  
600  
0
1
2
3
4
0
25  
50  
TS  
0
200  
-diF/dt  
400  
VF  
Fig. 1 Forward current  
versus voltage drop per diode.  
Fig. 2 Maximum forward current at  
heatsink temperature TS.  
Fig. 3 Typical peak reverse current  
versus -diF/dt.  
1.4  
1.2  
1.0  
1.2  
100  
V
3000  
TVJ=100°C  
ns  
µs  
VR=540 V  
1.0  
80  
2400  
VFR  
IF=30A  
0.8  
0.6  
0.4  
0.2  
0.0  
VFR  
trr  
max.  
IRM  
IF=60A  
IF=30A  
IF=15A  
K
f 0.8  
60  
40  
20  
0
1800  
1200  
600  
0
tfr  
0.6  
trr  
tfr  
0.4  
TVJ=125°C  
IF=30A  
0.2  
0.0  
typ.  
A/ s  
°C  
A/ s  
600  
0
40  
80  
120  
160  
0
200  
-diF/dt  
400  
600  
0
200  
-
400  
TVJ  
diF/dt  
Fig. 4 Dynamic parameters versus  
junction temperature.  
Fig. 5 Typical recovery time  
versus -diF/dt.  
Fig. 6 Typical peak forward voltage and  
forward recovery time versus -diF/dt.  
2.0  
300  
W
RthSA (K/W)  
0.2  
K/W  
0.5  
250  
1.0  
1.5  
2.0  
1.5  
200  
ZthJS  
1.0  
4.0  
6.0  
RthJSi ti  
150  
0.05 0.04  
0.2  
0.75 0.13  
0.5  
0.2  
0.07  
100  
50  
0
0.5  
0.0  
0.001  
s
°C  
10 20 30 40 50 A 0 25 50 75 100 150  
0.01  
0.1  
1
10  
0
IdAVM  
t
TA  
Fig. 7 Transient thermal impedance junction to heatsink  
Fig. 8 Power dissipation versus direct output current  
and ambient temperature  
© 2000 IXYS All rights reserved  
2 - 2  
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