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WTPA16A60CW

型号:

WTPA16A60CW

描述:

双向晶闸管[ Bi-Directional Triode Thyristor ]

品牌:

WINSEMI[ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]

页数:

5 页

PDF大小:

359 K

WTPA16A60CW  
Bi-Directional Triode Thyristor  
Features  
■ Repetitive Peak off-State Voltage: 600V  
■ R.M.S On-State Current(IT(RMS)=16A  
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=22.5A  
■ High Commutation dV/dt.  
Tab  
General Description  
General purpose swithhing and phase control applications. These  
devices are intended to be interfaced directly to micro-controllers,  
logic integrated circuits and other low power gate trigger circuits  
such as fan speed and temperature modulation control, lighting  
control and static switching relay.  
The -W series are specially recommended for use on inductive loads,  
thanks to their high commutation performances. By using an internal  
ceramic pad, the WTPA series provides voltage insulated tab (rated  
at 2500V RMS). complying with UL standards (file ref.:E347423)  
TO220ISO  
Absolute Maximum Ratings (TJ=25unless otherwise specified)  
Symbol  
VDRM/VPRM  
IT(RMS)  
Parameter  
Value  
Units  
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)  
600  
V
Forward Current RMS (All Conduction Angles, TJ=58)  
16  
A
ITSM  
I2t  
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)  
Circuit Fusing Considerations (tp= 10 ms)  
160/168  
A
A2s  
W
144  
5
PGM  
PG(AV)  
Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)  
Average Gate Power — Forward, (Over any 20ms period)  
1
W
Critical rate of rise of on-state current  
TJ=125℃  
dI/dt  
50  
A/μs  
ITM = 20A; IG = 200mA; dIG/dt = 200mA/µs  
IFGM  
VRGM  
TJ,  
Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS)  
Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS)  
Junction Temperature  
4
A
V
10  
-40~125  
-40~150  
Tstg  
Storage Temperature  
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may  
swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.  
Thermal Characteristics  
Value  
Typ  
Symbol  
Parameter  
Units  
Min  
Max  
RQJC  
RQJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
-
-
1.6  
/W  
/W  
-
-
60  
Rev. A Sep.2010  
T03-3  
Copyright @ WinSemi Microelectronics Co., Ltd., All rights reserved.  
WTPA16A60CW  
Electrical Characteristics (TJ = 25°C unless otherwise specified)  
Typ  
Characteristics  
Symbol  
Min  
Max Unit  
.
-
TJ=25℃  
Peak Forward or Reverse Blocking Current  
-
-
5
1
μA  
IDRM//IRRM  
(VDRM=VRRM,  
)
TJ=125℃  
-
-
mA  
Forward “On” Voltage (Note2) (ITM = 22.5A tp=380μs)  
VTM  
-
1.55  
V
T2+G+  
-
-
-
-
-
-
-
-
-
-
-
-
35  
35  
Gate Trigger Current (Continuous dc)  
IGT  
T2+G-  
mA  
(VD = 12 Vdc, RL = 33 Ω)  
T2-G-  
35  
T2+G+  
1.2  
1.2  
1.2  
Gate Trigger Voltage (Continuous dc)  
(VD =12 Vdc, RL = 33 Ω)  
VGT  
T2+G-  
V
T2-G-  
VGD  
dV/dt  
IH  
Gate threshold voltage( VD= VDRM,RL = 3.3 KΩ,TJ=125,)  
0.2  
40  
-
-
-
-
-
-
V
Critical rate of rise of commutation Voltage (VD=0.67VDRM  
Holding Current (IT= 100 mA)  
)
V/μs  
mA  
15  
T2+G+  
T2+G-  
T2-G-  
-
-
-
-
-
-
25  
30  
25  
Latching current  
IL  
mA  
mΩ  
(VD =12 Vdc,IGT=0.1A)  
Dynamic resistance  
Rd  
-
-
25  
Note 2. Forward current applied for 1 ms maximum duration, duty cycle  
2/5  
Steady, keep you advance  
WTPA16A60CW  
Fig.1  
Fig.2  
Fig.3  
Fig.4  
Fig.6  
Fig.5  
3/5  
Steady, keep you advance  
WTPA16A60CW  
Fig.7  
Fig.8  
Fig.9  
Fig.10 Gate Trigger Characteristics Test Circuit  
4/5  
Steady, keep you advance  
WTPA16A60CW  
TO-220ISO Package Dimension  
Unit: mm  
5/5  
Steady, keep you advance  
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