WTPB4A60SW
Bi-Directional Triode Thyristor
Features
◆
◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM
High Commutation dv/dt
)
◆
High Junction temperature(TJ=150℃)
General Description
Standard gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
Ratings Units
V
Repetitive Peak Off-State Voltage
R.M.S On-State Current
600
V
A
DRM/VRRM
IT(RMS)
TJ = 110 °C
4.0
30
31
One cycle, Peak value, non-
50Hz
60Hz
ITSM
Surge On-State Current
A
repetitive full cycle
I2t
PGM
PG(AV)
IGM
2
2
5.1
I t
A s
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
5
1
W
W
A
TJ = 125 °C
TJ = 125 °C
4.0
VGM
TJ
Peak Gate Voltage
7.0
V
Operating Junction Temperature
Storage Temperature
-40~+150
-40~+150
℃
℃
TSTG
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
RθJA
Thermal Resistance Junction to Case(DC)
Thermal Resistance Junction to Ambient(DC)
2.6
60
℃/W
℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1
