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IXBH10N170

型号：

IXBH10N170

描述：

高电压，高增益BIMOSFET单片双极型晶体管MOS[ High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

597 K

下载PDF手册
VCES = 1700 V  
IC25 20 A  
VCE(sat) = 3.8 V  
HighVoltage,HighGain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
IXBH 10N170  
IXBT 10N170  
=
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXBT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1700  
1700  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
(TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
20  
10  
40  
A
A
A
TO-247AD(IXBH)  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 33 Ω  
ICM  
=
=
20  
A
V
TAB)  
(RBSOA)  
Clamped inductive load  
VCES  
1350  
G
C
E
PC  
TC = 25°C  
140  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate,  
C = Collector,  
E=Emitter,  
TAB = Collector  
Features  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
High Blocking Voltage  
JEDEC TO-268 surface and  
JEDEC TO-247 AD  
z
Maximum Tab temperature for soldering SMD devices for 10 s  
260  
°C  
z
Low conduction losses  
Md  
Mounting torque (M3) (TO-247)  
1.13/10Nm/lb.in.  
z
z
High current handling capability  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
MOS Gate turn-on  
- drive simplicity  
z
Molding epoxies meet UL 94 V-0  
flammability classification  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
z
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
Temperature Coefficent  
IC = 250 µA, VCE = VGE  
Temperature Coefficent  
1700  
3.0  
V
%/K  
V
AC motor speed control  
z
0.10  
Uninterruptible power supplies (UPS)  
5.0  
z
Switched-mode and resonant-mode  
power supplies  
Capacitor discharge circuits  
- 0.24  
%/K  
z
ICES  
VCE = 0.8 VCES  
VGE = 0 V  
T = 25°C  
TJJ = 125°C  
10 µA  
100 µA  
Advantages  
z
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100 nA  
High power density  
z
Suitable for surface mounting  
VCE(sat)  
3.4  
4.1  
3.8  
V
V
z
Easy to mount with 1 screw,  
TJ = 125°C  
(isolated mounting screw hole)  
DS99048(05/03)  
© 2003 IXYS All rights reserved  
IXBH 10N170  
IXBT 10N170  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC90; V = 10 V,  
4.0  
6.5  
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
700  
40  
12  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Inductive load, TJ = 25°C  
Qg  
Qge  
Qgc  
30  
6
10  
nC  
nC  
nC  
e
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
A12  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
A
td(on)  
tri  
td(off)  
tfi  
35  
28  
500  
1000  
6
ns  
ns  
ns  
ns  
mJ  
b
b12  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
b
IC = IC90, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 56 Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
e
5.20  
5.72 0.205 0.225  
td(on)  
tri  
Eon  
td(off)  
tfi  
35  
28  
0.7  
600  
1200  
ns  
ns  
mJ  
ns  
ns  
L
19.81 20.32  
4.50  
.780 .800  
.177  
L1  
∅P 3.55  
Q
R
S
3.65  
.140 .144  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 56 Ω  
5.89  
4.32  
6.15 BSC  
6.40 0.232 0.252  
5.49  
.170 .216  
242 BSC  
Eoff  
8
mJ  
TO-268 Outline  
RthJC  
RthCK  
0.89 K/W  
K/W  
(TO-247)  
0.25  
ReverseDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
I
= IC90, V = 0 V, Pulse test,  
3.0  
V
tF < 300 uGsE, duty cycle d < 2%  
IRM  
trr  
IF = IC90, V = 0 V, -diF/dt = 50 A/us  
vR = 100 VGE  
10  
360  
A
ns  
Min Recommended Footprint  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXBH 10N170  
IXBT 10N170  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
@ 25 deg. C  
70  
60  
50  
40  
30  
20  
10  
20  
18  
16  
14  
12  
10  
8
VG E = 17V  
15V  
VGE = 17V  
15V  
13V  
11V  
9V  
13V  
1 1 V  
7V  
5
6
9V  
7V  
4
2
0
0
1
2
3
4
6
0
-50  
4
2
4
6
8
10  
12  
14  
16  
150  
9
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Temperature Dependence of VCE(sat)  
20  
18  
16  
14  
12  
10  
8
1. 8  
1. 6  
1. 4  
1. 2  
VGE = 17V  
15V  
VG E = 15V  
13V  
11V  
I C= 32A  
9V  
7V  
I C= 16A  
1
6
4
0.8  
0.6  
I C= 8A  
2
0
-25  
0
25  
50  
75  
100  
125  
1
2
3
4
5
6
7
8
VC E - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter voltage  
Fig. 6. Input Admittance  
10  
9
8
7
6
5
4
3
2
20  
17 . 5  
15  
TJ = 25 C  
º
12 . 5  
10  
I C = 20A  
1 0 A  
7.5  
5
TJ = 125  
25  
º
C
º
C
º
-40 C  
2.5  
0
5A  
6
7
8
9
10  
11  
12  
13  
14  
15  
5
6
7
8
VG E - Volts  
VG E - Volts  
© 2003 IXYS All rights reserved  
IXBH 10N170  
IXBT 10N170  
Fig. 8. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 7. Transconductance  
9
8
7
6
5
4
3
2
30  
25  
20  
15  
10  
5
TJ = -40  
25  
125  
º
C
º
C
º
TJ= 25 C  
º
C
º
TJ = 125 C  
1
0
0
0
2 . 5  
5
7 . 5  
10  
12 . 5  
15  
17 . 5  
2 0  
0.5  
1
1.5  
2
2.5  
3
I C - Amperes  
VF - Volts  
Fig. 9. Dependence of Eoff on RG  
Fig. 10. Dependence of Eoff on IC  
15  
14  
13  
12  
11  
10  
9
15  
TJ = 125 C  
º
14  
13  
12  
V
GE = 15V  
I C =20A  
VCE = 1360V  
R G = 100 Ohms  
º
TJ = 125 C  
11  
10  
9
VGE = 15V  
V
CE = 1360V  
R G= 10 Ohms  
I C = 10A  
8
8
7
7
10  
12  
14  
16  
18  
2 0  
0
20  
40  
60  
80  
100  
I C - Amperes  
R G - Ohms  
Fig. 11. Dependence of Eoff on Temperature  
Fig. 12. Gate Charge  
17  
15  
13  
11  
9
15  
12  
9
Solid lines - R G = 100 Ohms  
Dashed lines - R G = 10 Ohms  
VCE = 600V  
I C = 10A  
I G = 10mA  
I C = 20A  
6
VGE = 15V  
VCE = 1360V  
3
7
I C = 10A  
0
5
0
5
10  
15  
2 0  
2 5  
3 0  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXBH 10N170  
IXBT 10N170  
Fig. 13. Maximum Transient Thermal  
Resistance  
Fig. 12. Capacitance  
10 0 0  
10 0  
10  
1
0.9  
C
i es  
f = 1MHz  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
C
oes  
res  
C
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VC E - Volts  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
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