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IXBD4411

型号:

IXBD4411

描述:

ISOSMART半桥驱动器芯片组[ ISOSMART Half Bridge Driver Chipset ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

11 页

PDF大小:

705 K

IXBD4410  
IXBD4411  
ISOSMARTTM Half Bridge Driver Chipset  
Type  
Description  
Package  
Temperature Range  
IXBD4410PI Full-Feature Low-Side Driver 16-Pin P-DIP  
IXBD4411PI Full-Feature High-Side Driver 16-Pin P-DIP  
-40 to +85°C  
-40 to +85°C  
IXBD4410SI Full-Feature Low-Side Driver 16-Pin SO  
IXBD4411SI Full-Feature High-Side Driver 16-Pin SO  
-40 to +85°C  
-40 to +85°C  
The IXBD4410/IXBD4411 ISOSMART  
chipset is designed to control the gates  
of two Power MOSFETs or Power  
IGBTs that are connected in a half-  
bridge (phase-leg) configuration for  
driving multiple-phase motors, or used  
in applications that require half-bridge  
power circuits. The IXBD4410/  
IXBD4411 is a full-feature chipset  
consisting of two 16-Pin DIP or SO  
devices interfaced and isolated by two  
small-signal ferrite pulse transformers.  
The small-signal transformers provide  
greater than 1200 V isolation.  
reference IXBD4411. They incorporate  
undervoltage VDD or VEE lockout and  
overcurrent or desaturation shutdown  
to protect the IGBT or Power MOSFET  
devices from damage.  
Features  
z
z
z
z
z
1200 V or greater low-to-high side  
isolation.  
Drives Power Systems Operating on  
up to 575 V AC mains  
dv/dt immunity of greater than  
50V/ns  
The chipset provides the necessary  
gate drive signals to fully control the  
grounded-source low-side power  
device as well as the floating-source  
high-side power device. Additionally,  
the IXBD4410/4411 chipset provides a  
negative-going, off-state gate drive  
signal for improved turn-off of IGBTs or  
Power MOSFETs and a system logic-  
compatible status fault output FLT to  
indicate overcurrent or desaturation,  
and undervoltage V or VEE. During a  
status fault, both chDipDset keep their  
respective gate drive outputs off; at  
VEE.  
Proprietary low-to-high side level  
translation and communication  
On-chip negative gate-drive supply  
to ensure Power MOSFET or IGBT  
turn-off and to prevent gate noise  
interference  
z
z
5 V logic compatible HCMOS inputs  
with hysteresis  
Available in either the 16-Pin DIP or  
the 16-Pin wide-body, small-outline  
plastic package  
20 ns switching time with 1000 pF  
load; 100 ns switching time with  
10,000 pF load  
Even with commutating noise ambients  
greaterthan 50V/nsandupto1200V  
potentials, this chipset establishes  
error-free two-way communications  
between the system ground-reference  
IXBD4410 and the inverter output-  
z
z
z
z
100 ns propagation delay time  
2 A peak output drive capability  
Self shut-down of output in response  
to over-current or short-circuit  
Under-voltage and over-voltage VDD  
lockout protection  
z
z
z
Protection from cross conduction of  
the half bridge  
Logic compatible fault indication  
from both low and high-side driver  
Applications  
540 V-  
z 1- or 3-Phase Motor Controls  
z Switch Mode Power Supplies  
(SMPS)  
z Uninterruptible Power Supplies  
(UPS)  
z Induction Heating and Welding  
Systems  
z Switching Amplifiers  
z General Power Conversion Circuits  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
1
IXBD4410  
IXBD4411  
Symbol  
Definition  
Maximum Ratings  
Dimensions in inch (1" = 25.4 mm)  
16-Pin SOIC  
VDD/VEE  
Vin  
Supply Voltage  
Input Voltage (INH, INL)  
-0.5 ... 24  
V
V
-0.5...VDD +0.5  
Iin  
Io (rev)  
Input Current (INL, INH, IM)  
Peak Reverse Output Current (OUT)  
10  
2
A
A
PD  
PD  
Maximum Power Dissipation (TA = 25° C)  
TC = 25° C (16-Pin SOIC)  
600  
10  
mW  
W
TA  
Operating Ambient Temperature  
Maximum Junction Temperature  
Storage Temperature Range  
-40 ... 85  
150  
-55 ... 150  
300  
°C  
°C  
°C  
°C  
TJM  
Tstg  
TL  
Lead Soldering Temperature for 10 s  
RthJA  
RthJC  
1.67  
10  
K/W  
K/W  
Die substrate  
connected to tab  
(16-Pin SOIC)  
Recommended Operating Conditions  
VDD/VEE  
VDD/LG  
LGh/LGl  
Supply Voltage  
10 ... 20  
V
V
V/ns  
10 ... 16.5  
Maximum Common Mode dv/dt  
50  
Symbol  
Definition/Condition  
Characteristic Values  
(TA = 25°C, VDD = 15 V, unless otherwise specified)  
min.  
typ.  
max.  
INL, INH Inputs (referred to LG)  
Vt+  
Vt-  
Vih  
Iin  
Positive-Going Threshold  
Negative-Going Threshold  
Input Hysteresis  
Input Leakage Current/Vin=VDD or LG  
Input Capacitance  
3.65  
-1  
V
V
V
µA  
pF  
1
1
1
16-Pin Plastic DIP  
Cin  
10  
Open Drain Fault Output (referred to LG)  
Voh  
Vol  
HI Output/Rpu = 10 kto VDD  
LO Output/Io = 4 mA  
VDD-0.05  
V
V
0.3  
0.5  
OUT Output (referred to LG)  
Voh  
Vol  
Ro  
Ro  
Ipk  
HI Output/Io = -5 mA  
LO Output/Io = 5 mA  
Output HI Res./Io = -0.1 A  
Output LO Res./Io = 0.1 A  
Peak Output Current/CL = 10 nF  
VDD-0.05  
1.5  
V
V
A
VEE+0.05  
3
3
2
5
4
IM Input (referred to KG)  
End view  
Vt+  
Cin  
Rs  
Positive-Going Threshold  
Input Capacitance  
Shorting Device Output Resistance  
0.24  
50  
0.3  
10  
75  
0.45  
100  
V
pF  
VEE Supply (referred to LG)  
VEE  
Iout  
finv  
Output Voltage/Io = 1 mA, Co = 1 µF  
Output Current/Vout = 0.70 • VEE  
Inverting Frequency  
-5  
-20  
-6.5  
-25  
600  
-7.5  
-4.8  
V
mA  
kHz  
V
VEEF  
Undervoltage Fault Indication  
-3  
© 2004 IXYS All rights reserved  
IXBD4410  
IXBD4411  
Symbol  
Definition/Condition  
Characteristic Values  
(TA = 25°C, VDD = 15 V, unless otherwise specified)  
min.  
typ.  
max.  
VDD Undervoltage Lockout  
Vuv  
Vuh  
Drop Out  
Hysteresis  
9.5  
0.1  
10.5  
0.15  
11.5  
0.3  
V
V
Quiescent Power Supply Current  
IDD  
VDD Current/Vin=VDD or LG, Io = 0  
20  
mA  
ns  
INL and INH Inputs (Fig. 1a - 1c)  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time;  
4410  
CL =1nF  
110  
175  
Rise time;  
C =10 nF  
CLL =1 nF  
70  
15  
100  
20  
ns  
ns  
Turn-off delay time  
4410  
CL =1nF  
70  
150  
ns  
Fall time  
C =10nF  
CLL =1nF  
70  
15  
150  
20  
ns  
ns  
tdlh(off)  
4410/4412  
Turn-on delay time vs.  
4411  
CL =1nF  
CL =1nF  
60  
60  
150  
150  
ns  
ns  
Turn-off delay time  
tdlh(on)  
4410  
Turn-on delay time vs.  
4411  
Turn-off delay time  
Fault Output Delay for any Fault Conditions (4410/4411)  
tFLT FLT Delay/Rpu = 2 kCL = 20 pF  
200  
200  
300  
300  
ns  
ns  
Overcurrent Protection Delay  
toc Driver-Off delay time CL = 1 nF  
1N5817  
1N5817  
Fig. 1a: IXBD4410/4411 Switching time test circuit  
Fig. 1b: Output signal waveform  
© 2004 IXYS All rights reserved  
3
IXBD4410  
IXBD4411  
Chipset Overview  
This ISOSMARTTM chipset is a pair of  
integrated circuits providing isolated  
high- and low-side drivers for phase-  
leg motor controls, or any other  
application which utilizes a half bridge,  
2- or 3-phase drive configuration. They  
consist of two drive control inputs (INL  
and INH) for two Power-MOSFET/IGBT  
gate-drive outputs. Both inputs operate  
from a common ground and are  
activated by HCMOS compatible logic  
levels. The low-side output operates  
near input ground, while the high-side  
output operates from a floating ground  
that is nominally the source connection  
of the high-side phase-leg power  
device. Both outputs typically provide 2  
A of transient current drive for fast  
switching of the phase-leg power  
device.  
15  
14  
VDD  
UVDD  
UVEE  
13  
12  
VEE  
Fig. 2: IXBD4411, high-side driver block diagram  
IXBD4410/IXBD4411  
The full featured ISOSMARTTM driver  
chipset incorporates a IXBD4410 as  
the low-side driver (Fig. 3) and a  
IXBD4411 as the high-side driver (Fig.  
2). When input "INL" is set to a positive  
logic level, the low-side gate output  
goes high (turns on); when "INH" is set  
to a positive logic level, the high-side  
gate drive output goes high. The high-  
side IC is isolated from the low-side IC  
by a magnetic barrier, across which the  
turn on/off signal is transmitted to the  
high-side gate drive. The IXBD4411  
fault signal is also transmitted back to  
the IXBD4410 driver via these  
15  
14  
VDD  
UVDD  
UVEE  
13  
12  
VEE  
transformers. This isolation only  
depends on the low cost communica-  
tions transformer, which is designed to  
withstand 1200 V or more.  
Fig. 3: IXBD4410, low-side driver block diagram  
There are two magnetic transmission  
channels between the low- and high-  
side IC's for bi-directional communi-  
cation. One sends a signal from the  
low-side IXBD4410 IC up to the high-  
side IXBD4411 IC and the other sends  
a signal back from the high-side to the  
low-side IC. The signal that is sent up  
controls the IXBD4411 gate-drive  
output. The signal sent from the  
IXBD4411 back to the IXBD4410  
indicates a high-side fault has occurred  
(overcurrent, or under-voltage of the  
high-side +power supplies). This is  
detected at the IXBD4410 driver and  
sets "FLT" pin low, to indicate the high-  
side fault.  
Fig. 4: Logic representation of IXBD4410 FLT signal  
© 2004 IXYS All rights reserved  
The fault signal that is returned from  
IXBD4410  
IXBD4411  
the IXBD4411 is strictly for status only.  
Any gate-drive shutdown because of a  
high-side fault is done locally within the  
high-side IXBD4411. The IXBD4411  
gate-drive will turn-off the power device  
whenever an overcurrent or under  
voltage condition arises. The overcurrent  
sensing is active only while the gate  
driver output is "high" (on). The  
overcurrent fault condition is latched and  
is reset on the next INH gate input  
positive transition. The FLT (pin 8) of the  
IXBD4411 is not used and should be  
grounded.  
VDD is at +15 V, and at rated average  
currents of 25 mA. The charge pump  
requires two external capacitors, C7 and  
C11 in Fig. 6. The charge pump  
frequency is nominally 600 kHz. The  
charge pump clock is turned off  
whenever the difference between the V  
and V supplies exceed 20 V, to preveDnDt  
exceeEdEing the breakdown rating of the  
IC.  
Both the IXBD4410 and IXBD4411  
drivers possess two local grounds each,  
a common logic ground, and "Kelvin"  
ground. The Kelvin ground and logic  
grounds are first connected directly to  
each other, and then to the Kelvin-source  
of the power device for accurate over-  
current measurement in the presence of  
inductive transients on the power device  
source terminal.  
The low-side IXBD4410 driver provides  
an output pin 8 (FLT) to indicate a high-  
side (IXBD4411) or a low-side  
(IXBD4410) fault. This output pin is an  
"open-drain" output. The IXBD4410 low-  
side driver fault indications are similar to  
the IXBD4411 high-side driver indications  
as outlined above. A "graphic" logic  
diagram of the chipset's FLT function is  
presented in Fig.4. Note that this diagram  
presents the logic of this function at the  
"low-side" IXBD4410 driver and is not the  
actual circuit. It describes the combined  
logic of the "fault logic" and "hi-side fault  
sense" blocks in both the IXBD4410 and  
IXBD4411 as shown in Fig. 2 and 3.  
Power MOSFET or IGBT overcurrent  
sensing utilizes an on-chip comparator  
with a typical 300 mV threshold. In a  
typical application, the current mirror pin  
of the Power MOSFET or IGBT is con-  
nected to a grounded, low-value resistor,  
and to the overcurrent comparator input  
on the high- or low-side driver. The  
comparator will respond typically within  
150 ns to an overcurrent condition to  
shutdown the driver output. The power  
switches could be protected also by  
desa-turation detection (see Fig. 6, 7 and  
9).  
The most efficient method of providing  
power for the high-side driver is by  
bootstrapping. This method is illustrated  
in the functional drawing on page 4 and  
in the application example (Fig. 6 and 9)  
by diode D1 and capacitor C1. Using this  
method, the power is drawn through a  
high-voltage diode onto a reservoir  
capacitor whenever the floating high-side  
ground returns to near the real ground of  
the low-side driver. When the high-side  
gate is turned on and the floating ground  
moves towards a higher potential, the  
bootstrapping diode back-biases, and the  
high-side driver draws its power solely  
from the reservoir capacitor. Power may  
also be provided via any isolated power  
supply (usually an extra secondary on  
the system housekeeping supply  
To assure maximum protection for the  
phase-leg power devices, the chipset  
incorporates the following Power  
MOSFET and IGBT protection circuits:  
z
Power device overcurrent or desa-  
turation protection. The IXBD4410/  
4411will turn off the driven device  
within 150 ns of sensing an output  
overcurrent or desaturation condition.  
z
Gate-drive lockout circuitry to prevent  
cross conduction (simultaneous  
conduction of the low- and high-side  
phase-leg power devices), either  
under normal operating conditions or  
when a fault occurs.  
switching transformer).  
z
z
z
During power-up, the chipset's gate-  
drive outputs will be low (off), until the  
voltage reaches the under-voltage trip  
point.  
Under-voltage gate-drive lockout on  
the low- and/or high- side driver when-  
ever the respective positive power  
supply falls below 9.5 V typically.  
Under-voltage gate-drive lockout on  
the low- and high- side driver  
whenever the respective negative  
power supply rises above -3 V  
typically.  
Both the IXBD4410 and IXBD4411  
contain on-board negative charge pumps  
to provide negative gate drive, which  
ensures turn-off of the high- or low-side  
power device in the presence of currents  
induced by power device Miller capaci-  
tance or from inductive ground transients.  
These charge pumps provide -5 V  
relative to the local driver ground when  
© 2004 IXYS All rights reserved  
5
IXBD4410  
IXBD4411  
Pin Description  
Pin Description  
IXBD4411 (High-Side Driver)  
IXBD4410 (Low-Side Driver)  
VDD  
NC  
NC  
T-  
VDD  
OUT  
VEE  
CA  
T+  
CB  
R-  
LG  
R+  
NC  
KG  
IM  
Sym. Pin Description of IXBD 4410/4411  
Sym. Pin Description of IXBD 4410/4411  
VDD  
1
Positive power supply.  
FLT  
NC  
8
Low/high side fault output. In the  
IXBD4410, this output indicates  
a fault condition of either device  
of the chipset. A "high" indicates  
no fault, A "low" indicates that  
either overcurrent,V or V  
16  
INL  
NC  
2
Logic input signal referenced to  
LG (logic ground). In the  
IXBD4410. A "high" to this pin  
turns on its gate drive output and  
resets its fault logic. A "low" to  
this pin turns off the gate drive  
output. In the IXBD4411 this pin  
is not used and should be  
under-voltage occurDreDd. InEcEase  
of overcurrent, this output will  
remain active "low" until the next  
input cycle of the respective  
driver. In case of under-voltage,  
this output will remain "low" until  
the proper voltage is restored.  
The IXBD4411 does not have a  
FLT output,and its pin 8 should  
be tied to LG  
connected to its ground (LG).  
No Connection (IXBD 4411)  
INH  
NC  
3
Logic input signal referenced to  
LG (logic ground). In the  
IXBD4410, this signal is  
No Connection (IXBD 4411)  
transmitted to the IXBD4411  
"high-side" driver through pins 4  
and 5 (T- and T+). A "high" to  
this pin turns on the IXBD4411  
gate drive output and resets its  
fault logic. A "low" to this pin  
turns off the IXBD4411 gate  
drive output. In the IXBD4411  
this pin is not used and should  
be connected to its ground (LG).  
No Connection (IXBD 4411)  
IM  
9
Current sense or desaturation  
detection input. This input is  
active only while the OUT pin is  
"high" (on). When the OUT pin is  
"low" (off) this input is pulled to  
ground through a 70 resistor.  
Any voltage at this pin above the  
threshold of .3 V typical, will turn  
the output (pin 15) off. This pin is  
used for power device  
overcurrent protection.  
T-  
T+  
4
5
Transmitter output complemen-  
tary drive signals. Direct drive of  
the low signal transformer, which  
is connected to the receiver of  
the chipset's companion device.  
In the IXBD4410, this signal  
transmits the on/off command to  
its companion IXBD4411. In the  
IXBD4411, this signal transmits  
the fault indication to its  
KG 10 Kelvin ground. This ground is  
used as Kelvin connection for  
overcurrent or desaturation  
sensing.  
LG 11 Logic and power ground.  
CB 12 Capacitor terminals for negative  
charge pump (VEE); "+"  
CA 13 terminal is CB (pin 12).  
companion IXBD4410 driver.  
VEE 14 Negative supply terminal(substrate)  
R-  
R+  
6
7
Receiver input complementary  
signal. Directly connected to the  
low signal transformer, which is  
driven by the chipset's compa-  
nion device. In the IXBD4410,  
this input receives the fault  
indication from its companion  
IXBD4411 driver. In the  
OUT 15 Gate drive output. In the  
IXBD4410 this output responds  
to the INL signal. A "high" at INL  
will turn it on ("high"), a "low" will  
turn it off ("low"). In the  
IXBD4411, this output responds  
to the transmitted signal from the  
companion IXBD4410. A "high"  
at INH of the IXBD4410 drives  
will turn it on ("high"). A "low"  
will turn it off ("low"). This output  
will turn off ("low") also in  
IXBD4411, this input receives  
the on/off command from its  
companion IXBD4410 driver.  
T
A
B
Connected to  
Pin 14 (substrate)  
VEE  
response to any fault condition.  
© 2004 IXYS All rights reserved  
IXBD4410  
IXBD4411  
reduces the voltage required to create  
a failure, this problem is even more  
likely to occur. In an industrial module  
package (e.g.: a 150 A/1200 V IGBT  
phase-leg module), the series induc-  
tance contributed by the long gate  
leads and connectors further compli-  
cate the design.  
Application  
The IXBD4410/4411 chipset devices  
are specifically designed as MOS-  
gated transistor drivers in half-bridge  
power converters, 1- and 3-phase  
motor controls, and UPS applications.  
The phase-leg PWM command is  
normally generated by previous (user  
provided) circuitry. It must be  
decomposed into two separate logic  
signals, one for the high-side and one  
for the low-side power transistors, with  
appropriate deadtime for each state  
transition. The deadtime insures non-  
overlapping conduction even if the  
turn-on and turn-off delay times of the  
power devices are unequal. The  
minimum deadtime should be greater  
than tdlh. A separate circuit, or an IC  
device like the IXYS deadtime  
In a heavily snubbered converter, or in  
a power supply design with low  
transformer leakage inductance, the  
design problem is relatively simple and  
negative drive is seldom required.  
However, in a modern snubberless or  
lightly snubbered converter design, it is  
important to keep the gate drive  
impedance high enough during  
transistor turnoff to limit the reapplied  
dv/dt (the transistor is its own 'active'  
snubber). This is always important for  
EMI control, and in the case of IGBT  
may be required to achieve the  
generator IXDP630, can be used to  
perform this function. The  
ISOSMART™ chipset family of  
Fig. 5: Switching a clamped inductive  
load  
necessary RBSOA. At the same time, it  
is mandatory to keep the off-state gate  
drive impedance very low to assure the  
transistor remain off during induced  
dv/dt (including diode recovery dv/dt).  
In some instances, it is simply not  
possible to satisfy both criteria with 0 V  
applied in the off-state. In these cases  
the IXBD4410/4411 with VEE negative  
bias generator must be used.  
devices do not generate deadtime,  
although there is an internal lockout  
that prohibits one device form being  
commanded "on" before the other is  
commanded "off". This simplifies start-  
up and shutdown protection circuitry,  
preventing logic error during power-up  
from turning on both high-and low-side  
transistors simultaneously.  
terminal of the device. If this current  
pulse causes a high enough voltage  
drop across the output impedance of  
the gate drive circuit, Rout, Q1 will be  
turned on.  
The Q1 conduction in every instance  
Q2 is turned on (and vice versa), aside  
from degrading efficiency, can lead to  
catastrophic failure of both power  
transistors. At high temperature, where  
the -6 to -7 mV/°C temperature  
The internal VEE generator is a charge  
pump circuit. Referring to Fig. 6, an  
external charge pump capacitor is  
required between the CA and CB  
Negative VEE Charge Pump Circuit  
Design  
The on-chip VEE generator provided in  
the IXBD4410/4411 generates a nega-  
tive power supply, regulated at 20 V  
below the positive V rail. If VDD is +10  
V, VEE will be -10 V. DIfDVDD is +15 V, VEE  
will be -5 V. This negative drive  
coefficient of IGBT/MOSFET threshold  
potential in the off-state is either  
desirable or required in many in-  
stances. When switching a clamped  
inductive load (Fig. 5), the turn-on of  
Q2 will commutate the freewheeling  
diode around Q1. Whether this diode is  
intrinsic (as in a MOSFET) or extrinsic  
(IGBT or bipolar), its reverse recovery  
is critical to proper circuit operation.  
1N5817  
At high turn-on di/dt in Q2 and near its  
rated voltage, the recovery of D1 can  
get quite "snappy" (the di/dt in the  
second half of the recovery process,  
after the diode has begun to recover its  
blocking capability, can get very large),  
creating a very high dv/dt across Q1.  
This dv/dt is impressed across the  
Miller capacitance of Q1, forcing a  
large current to flow out the gate  
1N5817  
Fig. 6: IXBD4410/4411 Detailed one phase circuit with dead time generator IXDP 630  
7
© 2004 IXYS All rights reserved  
IXBD4410  
IXBD4411  
terminals (C7, C11), and an output  
reservoir capacitor between VEE and  
GND (C10, C14). A 0.1 µF charge  
pump capacitor (C7, C11) is recom-  
mended. The voltage regulation  
method used in the IXBD4410/4411  
allows a 1 to 2 V ripple frequency  
depends on the size of the VEE output  
reservoir capacitor (C10, C14) and the  
average load current. The minimum  
recommended output reservoir (C10,  
C14) is 4.7 µF tantalum, or 10 µF if  
aluminium electrolytic construction is  
chosen. Note that this reservoir  
a
b
c
IM  
IM  
IM  
Rs  
Rs  
Rs  
KG  
GND  
KG  
GND  
KG  
GND  
With Current Mirror  
With Standard  
MOSFET/IGBT  
Desaturation Detection  
with Standard  
MOSFET/IGBT  
Fig. 7: Alternative overcurrent protection circuits  
capacitor is in addition to a good  
quality high frequency bypass capaci-  
tor (0.1 µF) that should be placed from  
VEE to GND (C9, C13).  
unit area of the mirror cells is much  
larger that Coss per unit area of the bulk  
of the chip due to periphery effects.  
This causes a large transient current  
pulse at the mirror output whenever the  
transistor switches (C • dv/dt currents),  
which can cause false overcurrent  
trigger. The RC filter indicated in Fig.  
7a will eliminate this problem.  
normally a good idea. Usually, the RC  
time constant should be two to ten  
times longer than the suspected RL  
time constant.  
A small resistor in series with the  
charge pump capacitor, (R7, R8)  
reduces the peak charging currents of  
the charge pump. A value or 68 or  
greater is recommended, as illustrated  
in the applications example in Fig. 6.  
Desaturation detection as in Figure 7c  
is probably the most common method  
of short circuit protection in use today.  
While not strictly an "overcurrent"  
detector, if the power transistor gain,  
and consequently short circuit let-  
through current, is well controlled (as  
with modern MOSFET and IGBT) this  
methodology offers very effective  
protection.  
Standard three-terminal MOSFET and  
IGBT devices (in discrete as well as  
modern industrial single transistor and  
phase-leg modules) can also be  
Current Sense / Desaturation  
Detection Circuit  
All members of the ISOSMART™  
driver family provide a very flexible  
overcurrent/short circuit protection  
capability that works with both standard  
three-terminal power transistors, and  
with 4- and 5-terminal current sensing  
power devices. Overcurrent detection  
is accomplished as illustrated in Fig. 7a  
(for a current mirror power device) and  
Fig. 7b (for a standard three terminal  
power transistor). Desaturation  
detection is accomplished with the  
same internal circuits by measuring the  
voltage across the power transistor in  
the on-state with an external resistor  
divider (Fig. 7c).  
protected from short circuit with the  
ISOSMART™ driver family devices. In  
discrete device designs, where the  
source/emitter terminal is available,  
overcurrent protection with an external  
power resistor can be implemented.  
The resistor is placed in series with the  
device emitter, with the full device  
current flowing through it (Fig. 7b). The  
sense resistor is again selected to  
develop 300 mV at the desired peak  
transistor current, assuming a trip point  
of 30 A is desired:  
The IXBD4410/4411 half-bridge circuits  
in Fig. 6 uses desaturation detection. In  
Fig. 6, the voltage across the two  
power MOSFET devices (or IGBTs) are  
monitored by two sets of voltage-  
divider networks, R10 and R11 for the  
high-side gate driver, and R13 and R14  
for the low-side gate driver. The  
dividers are set to trip the IM input  
comparators when either Power  
MOSFET device VDS exceeds a  
reasonable value, perhaps 50 V  
Rs = 300 mV / 30 A = 10 mΩ  
(use 10 m, noninductive  
current sense resistor).  
(usually a value of 10 % of the nominal  
DC bus voltage works well). R10 or  
R13 are chosen to tolerate the applied  
steady state DC bus voltage at an  
acceptable power dissipation.  
The IM input trip point VTIM, typically  
300 mV, is referenced to the Kelvin  
ground pin KG.  
It is important to recognize that  
"noninductive" is a relative term,  
especially when applied to current  
sense resistor construction and  
characterization. There is always  
significant series inductance inserted  
with the sense resistor, and L • di/dt  
voltage transients can cause false  
overcurrent trigger.  
Dielectric withstand capability, power  
handling, temperature rise, and PC  
board creep and strike spacings, must  
all be carefully considered in the  
design of the voltage-divider networks.  
Current Mirror MOSFET and IGBT allow  
good control of peak let-through  
currents and excellent short circuit  
protection when combined with the  
ISOSMART™ driver family of devices.  
The sense resistor is chosen to  
develop 300 mV at the desired peak  
transistor current, assuming a mirror  
ration of 1400:1, and a trip point of 30  
A is desired:  
In the off-state, the voltage across the  
Power MOSFET device may go as high  
as the DC bus potential. To keep this  
normal condition from setting the  
internal fault flip-flop of the IXBD4410  
or the IXBD4411, an internal CMOS  
switch is turned on and placed across  
lM and KG pins shorting them together.  
This effectively discharges C8 or C12  
in Fig. 6 and maintains zero potential  
The RC filter indicated in Figure 7b will  
eliminate this problem. Choosing the  
RC pole at the current sense resistor  
RL zero should exactly compensate for  
series inductance. Because the exact  
value is not normally known (and can  
vary depending on PC layout and  
component lead dress) this is not  
Rs = 300 mV • 1400/30 A = 14 Ω  
(use 15 CC).  
It is important to realize that Coss per  
© 2004 IXYS All rights reserved  
IXBD4410  
IXBD4411  
with respect to KG at IM.  
When the command arrives to switch  
on the Power MOSFET device, the  
CMOS switch shorting IM to KG is  
turned off. The driven Power MOSFET  
device is switched on approximately  
100 ns to 1 µs later, and with typical  
load conditions, its drain-to-source  
potential, VDS, may take an additional  
10 µs of delay to collapse to the normal  
on-state voltage level. To prevent false  
triggering due to this, C8 or C12 in  
parallel combination with R10 and R11,  
or R13 and R14, delays the IM input  
signal. During this turn-on interval, the  
voltage across C8 or C12 will rise until  
the Power MOSFET device finally  
comes on and pulls the voltage across  
C8 or C12 back down. If the MOSFET  
device load circuit is shorted, its VDS  
voltage cannot collapse at turn-on. In  
this case, the voltage across C8 or C12  
rises rapidly until it reaches 300 mV,  
tripping the fault flip-flop and shutting  
down the driver output. At the same  
time, C8 or C12 must be kept small  
enough that the added delay does not  
slow down the detection of a short  
circuit event so much that the Power  
MOSFET device fails before the driver  
realizes that it is in trouble.  
Fig. 8: Typical 3-phase motor control system block diagram  
PCB Layout Considerations  
The current sense/desaturation detect  
input is noise sensitive. The 300 mV trip  
point is referred to the KG (Kelvin  
ground) pin, and the applied signal must  
be kept as clean as possible, A filter is  
recommended, preferably a monolithic  
ceramic capacitor placed as close to the  
IC as possible directly between IM and  
KG. To preserve maximum noise  
The IXBD4410/4411 is intended to be  
used in high voltage, high speed, high  
dv/dt applications.  
To ensure proper operation, great care  
must be taken in laying out the printed  
circuit board. The layout critical areas  
include the communication links, current  
sense, gate drive, and supply bypass-  
ing.  
immunity, the KG pin should first be  
connected directly to the LG pin, and the  
pair then sent directly to the power  
transistor source/emitter terminal, or (if a  
desaturation detection circuit is used) to  
the bottom of the divider resistor chain.  
The communication path should be as  
short as possible. Added inductance  
disturbs the frequency response of the  
signal path, and these distortions may  
cause false triggering in the receiver.  
The transformer should be placed  
between the two ICs with the orientation  
of one IC reversed (Fig. 9).  
Three Phase Motor Controls  
Fig. 8 is a block diagram of a typical 3-  
phase PWM voltage-source inverter  
All supply pins must be bypassed with a  
low impedance capacitor (preferably  
monolithic ceramic construction) with  
minimum lead length. The output driver  
stage draws 2 A (typical) currents during  
transitions at di/dt values in excess of  
100 A/µs. Supply line inductance will  
cause supply and ground bounce on the  
chip that can cause problems (logic  
oscillations and, in severe cases,  
possible latch-up failure) without proper  
bypassing. These bypass elements are  
in addition to the reservoir capacitors  
required for the negative Vee supply and  
the high-side bootstrapped supply if  
these features are used.  
motor control. The power circuit  
consists of six power switching transis-  
tors with freewheeling diodes around  
each of them. The control function may  
be performed digitally by a microproces-  
sor, microcontroller, DSP chip, or user  
custom IC; or it may be performed by a  
PC board full of random logic and  
analog circuits. In any of these cases,  
the PWM command for all six power  
transistors is generated in one circuit,  
and this circuit is usually referred to  
system ground potential - the bottom  
terminal of the power bridge.  
Capacitance between the high- and low-  
side should be minimized. No signal  
trace should run underneath the  
communication path, and high- and low-  
side traces should be separated on the  
PCB. The dv/dt of the high-side during  
power stage switching may cause false  
logic transitions in low-side circuits due  
to capacitive coupling.  
The low signal pulse transformer  
provides the isolation between high-and  
low-side circuits. For 460 V~ line  
Power Circuit Noise Considerations  
The ISOSMART™ family of drivers is  
the interface between the world of  
control logic and the world of power, 5 V  
input logic commands precisely control  
actions at high voltage and current  
(1200 V and 100 A in a typical applica-  
tion). Fig. 6 is a detailed schematic of  
one phase of three 3-phase motor  
control, showing the interconnection of  
the IXBD4410/4411 and its associated  
circuitry.  
operation, a spacing of 4 mm is recom-  
mended between low- and high-side  
circuits, and a transformer HIPOT  
specification of at least 1500 V~ is  
required. This creep spacing is usually  
adequate to control leakage currents on  
the PCB with up to 1200 V~ applied  
after 10 to 15 years of accumulated dust  
and particulates in a standard industrial  
environment. In other environments, or  
at other line voltages, this spacing  
should be appropriately modified.  
In a typical transistor inverter, the output  
MOSFET may switch on or off with di/dt  
>500 A/µs. Referring to Fig.10 and  
assuming that the MOSFET source  
terminal has a one inch path on the PCB  
to system ground, a voltage as high as  
V = 27 nH • 500 A/µs = 13.5 V can be  
developed.  
© 2004 IXYS All rights reserved  
9
IXBD4410  
IXBD4411  
drive output follows (after its propaga-  
tion delay) and the MOSFET starts to  
conduct. The voltage transient induced  
across LS1 (V = LS1 • di/dt) raises the  
local ground (point a) until it exceeds  
conversion equipment due to their very  
high common mode dv/dt rejection  
capabilities.  
If the MOSFET switched 25 A, the  
transient will last as long as (25/500) µs  
or 50 ns, which is more than the typical  
6 or 7 ns propagations or of a 74HC  
series gate.  
Transformer Considerations  
V
oh (630) - V and the driver (after its  
propagation idl elay) turns the MOSFET  
off. Now the MOSFET current falls,  
V(LS1) drops, point (a) drops to system  
ground (or slightly below), and the driver  
detects a "1" at its input. After its  
Fig. 10 illustrates an example layout  
problem. The power circuit consists of  
three power transistors (MOSFETs in  
this example). With the ISOSMART™  
gate driver chipset grounded as in  
option (b) in Fig. 10, the communication  
path from the IXDP630 will operate  
without errors. The PC trace induced  
voltages are not common with the digital  
The transformer is the communication  
link and isolation barrier between the  
high- and low-side ICs. The high-side  
gate and fault signals are transmitted  
through the transformer while main-  
taining the proper isolation. The  
propagation delay, it again turns the  
transmitter signal is in the form of a  
Fig. 9: Suggested IC Orientation  
path, so the input of the gate driver will  
not see or respond to them.  
Fig. 10: Potential layout problems that create functional problems  
Unfortunately, the MOSFET will not  
operate properly. The voltage induced  
across LS1 when Q1 is turned on, acts  
as source degeneration, modifying the  
turn-on behavior of the MOSFET. If  
LS1= 27 nH, and V is 15 V (assuming  
the gate plateau of CthC e MOSFET is 6V),  
the di/dt at turn-on will be regulated by  
the driver/MOSFET/LS1 loop to about  
200 A/µs; quite a surprise when your  
circuit requires 500 A/µs to operate  
correctly.  
MOSFET on, continuing the oscillation  
for one more cycle.  
square wave, but the receiver responds  
only to the logic edges. This allows for  
much smaller transformer designs,  
since a 10 kHz switching frequency  
does not require a 10 kHz pulse  
transformer.  
To eliminate this problem, a ground  
level transformation circuit must be  
added, that rejects this common mode  
transient. The simplest is a de-coupling  
circuit, also illustrated in Fig. 10. The  
capacitor voltage on C remains  
The recommended transformer for this  
ISOSMART™ driver chipset is  
fabricated using a very small ferrite  
shield bead (see Fig. 11), onto which a  
six-turn primary and a two-turn  
secondary winding of 36 AWG magnet  
wire are made. The two windings are  
segment wound to achieve primary-to-  
secondary isolation of up to 2500 V~.  
The six-turn primaries are connected to  
the respective IXBD4410/4411  
transmitter outputs and the two-turn  
secondaries are connected to their  
respective receiver inputs.  
constant while the trandsient voltage is  
dropped across Rd and the driver  
detects no input transition, eliminating  
the oscillation. This circuit does add  
significantly to turn-on and turn-off delay  
time, and cannot be used if the transient  
lasts longer than the allowable delays.  
Delay times must be considered in  
selection of system dead time.  
It is possible to make use of this  
behavior to create a turn-on or turn-off  
di/dt limiter (perhaps to snub the upper  
free wheeling diode reverse recovery).  
While possible, this is normally not  
desirable or practical where two or more  
transistors are controlled. Equalizing the  
parasitic impedances of three traces  
while positioning the transistors next to  
their heat sink and meeting UL/VDE  
voltage spacings is just too difficult.  
The most complex (and most effective)  
method of eliminating the effects of  
transients between grounds is isolation.  
Optocouplers and pulse transformers  
are the most commonly used isolation  
techniques, and work very well in this  
case. The IXDP630/631 has been  
specifically designed to directly drive a  
high speed optocoupler like the Hewlett  
Packard HCPL22XX family or the  
Grounding the gate driver as in option  
(a) in Fig. 10 solves the MOSFET turn  
on problem by eliminating LS1 from the  
source feedback loop. Now, unfor-  
tunately, the gate driver will oscillate  
every time it is turned on or off. As the  
IXDP630 output goes "high", the gate  
General Instrument 740L60XX optologic  
family. These optos are especially well  
suited to motor control and power  
© 2004 IXYS All rights reserved  
IXBD4410  
IXBD4411  
The nominal electrical specifications of  
the transformer are as follows:  
z
Open circuit inductance  
(100 kHz; 20 mV):  
3 µH  
z
z
z
z
Interwinding capacitance:  
2 pF  
Primary leakage inductance: 0.1 µH  
Turns ratio:  
6:2  
Primary-to-secondary isolation  
(1min):  
1500 V~  
125  
Fig. 11: Ferrite bead dimensions  
z
Core permeability (µi):  
over a wide common mode input range.  
To reduce noise pickup, the receiver  
has 250 mV of input hysteresis.  
The recommended ferrite bead is Fair  
Rite Products part number 2661000101,  
which is manufactured by:  
If the signal is being distorted at the  
transmitter, the transmitter is probably  
running into current limit. A decrease in  
the coupling capacitance or an increase  
in the damping resistance should solve  
this problem. The receiver operates  
over a wide input range. The minimum  
amplitude for one side of the receiver is  
about 1 V and a maximum of about 3 V.  
It is critical that there be no overshoot  
on the transformer secondary wave-  
form. Each signal should be slightly  
overdamped. If significant overshoot  
exists, the received signal may be  
Fair-Rite Products Corp.  
Wallkill, NY  
Phone: (800) 836-0427  
Web site: www.fair-rite.com  
As seen in the application drawings  
(Fig. 6, 9 and 12) a coupling capacitor  
(22 nF) and a damping resistor (22 )  
are added in series with the primary  
side of the transformer. The capacitor  
will control the small amount of energy  
needed to transfer the signal to the  
companion driver. The resistor will  
control the damping of the signal and  
limit the peak transmitter output current.  
The receiver is designed to operate  
logically inverted. An increase of the  
damping resistor will solve this problem.  
Fig. 12: Transmitter/Receiver Waveforms  
DS96528E(05/04)  
11  
© 2004 IXYS All rights reserved  
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