IXBA16N170AHV
IXBT16N170AHV
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-263HV Outline
Min.
Typ.
Max.
gfs
IC = 10A, VCE = 10V, Note 1
8.0
12.5
S
Cies
Coes
Cres
1400
90
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
31
Qg(on)
Qge
Qgc
65
13
22
nC
nC
nC
IC = 10A, VGE = 15V, VCE = 0.5 • VCES
PIN: 1 - Gate
2 - Emitter
td(on)
tri
td(off)
tfi
15
25
ns
ns
Inductive load, TJ = 25°C
3 - Collector
IC = 10A, VGE = 15V
160
50
250
100
2.5
ns
ns
VCE = 0.8 • VCES, RG = 10
Note 2
Eof
1.2
mJ
f
td(on)
tri
15
28
ns
ns
Inductive load, TJ = 125°C
IC = 10A, VGE = 15V
Eon
td(off)
tfi
2.0
220
150
2.6
mJ
ns
VCE = 0.8 • VCES, RG = 10
ns
Note 2
Eoff
mJ
RthJC
0.83 °C/W
TO-268HV Outline
Reverse Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
trr
IF = 10A, VGE = 0V
5.0
V
ns
A
PIN:
1 - Gate
2 - Emitter
3 - Collector
360
10
IF = 10A, VGE = 0V, -diF/dt = 50A/μs
VR = 100V, VGE = 0V
IRM
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
