IXBH 42N170
IXBT 42N170
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; V = 10 V,
20
30
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
∅ P
Cies
Coes
Cres
3500
195
45
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
147
40
70
nC
nC
nC
e
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A12
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
td(on)
tri
td(off)
tfi
45
35
365
465
9
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
A
IC = IC90, VGE = 15 V
b
VCE = 0.5 VCES, RG = Roff = 10 Ω
b
b12
Remarks: Switching times may
C
D
E
.4
.8
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
20.80 21.46
15.75 16.26
Eoff
e
5.20
19.81 20.32
4.50
5.72 0.205 0.225
td(on)
tri
Eon
td(off)
tfi
45
38
50
390
730
ns
ns
mJ
ns
ns
L
.780 .800
.177
.140 .144
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.5 VCES, RG = Roff = 10 Ω
L1
∅P 3.55
Q
R
S
3.65
5.89
4.32
6.15 BSC
6.40 0.232 0.252
5.49
.170 .216
242 BSC
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
,
higher TJ or increased RG
Eoff
12.8
mJ
TO-268 Outline
RthJC
RthCK
0.35 K/W
K/W
(TO-247)
0.25
ReverseDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
I
= IC90, V = 0 V, Pulse test,
3.0
V
tF < 300 uGsE, duty cycle d < 2%
IRM
trr
IF = 25A, VGE = 0 V, -diF/dt = 50 A/us
24
360
A
ns
vR = 100V
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
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4,850,072
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6,162,665
6,259,123B1
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6,404,065B1
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6,710,405B2
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6,759,692
