VUM 85-05A
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
MOSFET T 1
VGS(th)
IGSS
VDS = ±20 V, ID = 30 mA
VGS = ±20 V, VDS = 0 V
2
3
4
V
±1.5 µA
IDSS
VDS = VDSS
VDS = 0,8•VDSS,VGS = 0 V, TVJ = 125°C
,
VGS = 0 V
0.5
1
1.4 mA
7
mA
RDS(on)
ID = ½ ID25, VGS = 10 V, pulse test
36 mW
t £ 300 µs, d £ 2%
gfs
td(on)
tr
td(off)
tf
VDS = 10 V,
ID = ½ ID25, t = < 300 µs
75
145
S
16
33
65
30
25 ns
45 ns
80 ns
40 ns
VDS = ½ VDSS, ID = ½ ID25, VGS = 15 V
RG = 1 W, L = 100 µH, TVJ = 125°C
Ciss
Coss
Crss
30
3
1
nF
nF
nF
VDS = 25 V, f = 1 MHz, VGS = 0 V
Qg
Qgs
Qg
945 1120 nC
195
435
280 nC
595 nC
VDS = ½ VDSS, ID = ½ ID25, VGS = 15 V
RthJC
RthCH
0.09 K/W
K/W
0.05
Single Phase Bridge Th1, D2, D3, D4
IF, IT = 45 A, TVJ = 25°C
TVJ =125°C
VF, VT
1.50
1.55
V
V
IRRM, IDRM
VD, VR = VDRM, VRRM
VD, VR = 0,8•VDRM, VRRM, TVJ = 125°C
,
TVJ = 25°C
0.5
1
1.4 mA
7
mA
VT0
rT
For power-loss calculations only
TVJ = 150°C
0.85
V
14 mW
1.5
100 mA
VGT
IGT
VD = 6 V
V
VGD
IGD
VD = 2/3 VDRM
,
TVJ = 150°C
0.2
5
V
mA
VRGM
10
V
IH
VD = 6 V, RGK
=
oo
200 mA
450 mA
IL
IG = 0.45 A, diG/dt = 0.45 A/µs, tp = 10 µs
(di/dt)cr
IG = 0.45A, diG/dt = 0.45A/µs, tp = 200µs, f = 50Hz
VD = 2/3VDRM, TVJ = 150°C, IT = 45 A, repetitive
150 A/µs
500 A/µs
IG = 0.45A, diG/dt = 0.45A/µs, tp = 200µs, f = 50Hz
VD = 2/3VDRM, TVJ = 150°C, IT = IDAV, non-repetitive
tgd
tq
IG = 0.45 A, diG/dt = 0.45 A/µs, VD = ½ VDRM
2
µs
µs
IT = 20 A, di/dt = -10 A/µs, VR = 100 V, VD = 2/3VDRM 150
tp = 200 µs, dv/dt = 15 V/µs, TVJ = 150°C
PGM
IT = Id(AV), TVJ = 150°C
tp = 30 µs
tp = 300 µs
10
5
0,5
W
W
W
PGAVM
RthJC
RthCH
DC per diode / thyristor
DC per diode / thyristor
1.3 K/W
K/W
0.4
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