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VUM33-06PH

型号：

VUM33-06PH

品牌：

IXYS[ IXYS CORPORATION ]

页数：

8 页

PDF大小：

304 K

下载PDF手册
VUM 33-06PH  
Single Phase  
Rectifier  
Power MOSFET Stage  
for Boost Converters  
Boost Diode  
MOSFET  
VRRM = 1600 V VRRM = 600 V VDSS = 600  
IDAV = 106 A IF25 60 A ID25 50  
V
A
=
=
Module for Power Factor Correction  
IFSM = 300 A VF (30A) = 2.24 V RDS(on) = 120 mΩ  
Part name (Marking on product)  
VUM33-06PH  
4
2
4
6
3
2
1
D
D1  
D2  
D3  
D4  
1
3
DT  
T
8
7
6
5
5
8
7
Features:  
Advantages:  
Package:  
• Package with DCB ceramic base plate  
• Soldering connections for PCB  
mounting  
• Isolation voltage 3600 V~  
• Low RDS(on) Polar™ MOSFET  
• Low package inductance for high  
speed switching  
• SONIC™ boost diode  
- fast and soft reverse recovery  
- low operating forward voltage  
• 3 functions in one package  
• Output power up to 8 kW  
• No external isolation  
• Easy to mount with two screws  
• Suitable for wave soldering  
• High temperature and power  
cycling capability  
• "V1-Pack" standard outline  
Insulated copper base plate  
Application:  
• Power factor pre-conditioner for  
SMPS, UPS, battery chargers and  
inverters  
• Boost topology for SMPS including  
1~ rectifier bridge  
• Fits easily to all available PFC  
controller ICs  
• Power supply for welding equipment  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100921b  
1 - 8  
VUM 33-06PH  
MOSFET T  
Ratings  
Symbol  
VDSS  
Definitions  
Conditions  
min.  
typ. max. Unit  
drain source voltage  
TVJ = 25°C  
600  
V
max. DC gate voltage  
max. transient gate source voltage  
VGSS  
VGSM  
continuous  
transient  
20  
30  
V
V
drain current  
ID25  
ID80  
TC = 25°C  
TC = 80°C  
50  
37  
A
A
total power dissipation  
Ptot  
TC = 80°C  
500  
W
drain source on resistance  
RDS(on)  
ID = 30 A; VGE = 10 V  
TVJ = 25°C  
TVJ = 125°C  
120  
240  
mΩ  
mΩ  
gate source threshold voltage  
drain source leakage current  
VGS(th)  
IDSS  
IC = 8 mA; VDS = VGS  
VDS = VDSS; VGS = 0 V  
TVJ = 25°C  
2.5  
5.0  
V
TVJ = 25°C  
TVJ = 125°C  
50  
500  
µA  
µA  
gate source leakage current  
input capacitance  
IGSS  
VGS = 20 V; VDS = 0 V  
500  
nA  
nF  
nC  
Ciss  
VDS = 25 V; VGS = 0 V; f = 1 MHz  
VDS = 300 V; VGS = 10 V; ID = 50 A  
8.0  
total gate charge  
QG(on)  
165  
turn-on delay time  
current rise time  
turn-off delay time  
current fall time  
turn-on energy per pulse  
turn-off energy per pulse  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
56  
12  
110  
12  
0.3  
0.16  
ns  
ns  
ns  
ns  
mJ  
mJ  
inductive load  
VDS = 380 V; ID = 20 A  
TVJ = 25°C  
V
GS = 0/10 V; RG = 4.7 W  
1)  
RG eff = 5.5 W  
turn-on delay time  
current rise time  
turn-off delay time  
current fall time  
turn-on energy per pulse  
turn-off energy per pulse  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
56  
16  
144  
14  
0.47  
0.20  
ns  
ns  
ns  
ns  
mJ  
mJ  
inductive load  
DS = 380 V; ID = 20 A  
VGS = 0/10 V; RG = 4.7 W  
TVJ = 125°C  
V
1)  
R
G eff = 5.5 W  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthJH  
0.14 K/W  
0.24 K/W  
with heat transfer paste (IXYS test setup)  
0.18  
1)  
RG eff includes the driver resistance of 0.8 W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100921b  
2 - 8  
VUM 33-06PH  
Boost Diode D  
Ratings  
Symbol  
VRRM  
Definitions  
Conditions  
min.  
typ. max. Unit  
max. repetitve reverse voltage  
forward current  
TVJ = 25°C  
600  
V
IF25  
IF80  
TC = 25°C  
TC = 80°C  
60  
40  
A
A
forward voltage  
reverse current  
VF  
IF = 30 A; VGE = 0 V  
VR = VRRM  
TVJ = 25°C  
TVJ = 125°C  
2.24  
2.19  
V
V
IR  
TVJ = 25°C  
TVJ = 125°C  
30  
2
µA  
mA  
reverse recovery charge  
max. reverse recovery current  
reverse recovery time  
Qrr  
IRM  
trr  
0.24  
11.7  
43  
µC  
A
ns  
mJ  
VR = 380 V  
diF /dt = -790 A/µs  
IF = 20 A  
2)  
2)  
TVJ = 25°C  
TVJ = 125°C  
reverse recovery energy  
Erec  
0.026  
reverse recovery charge  
max. reverse recovery current  
reverse recovery time  
Qrr  
IRM  
trr  
0.59  
15.9  
55  
µC  
A
ns  
mJ  
VR = 380 V  
diF /dt = -700 A/µs  
IF = 20 A  
reverse recovery energy  
Erec  
0.076  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthJH  
0.72 K/W  
0.96 K/W  
with heat transfer paste (IXYS test setup)  
0.84  
2) Test setup: MOSFET T driven with RG eff = 5.5 W and VGS = 0/10 V  
Input Rectifier Bridge D1 - D4  
Ratings  
Symbol  
VRRM  
Definitions  
max. repetitive reverse voltage  
Conditions  
min.  
typ. max. Unit  
TVJ = 25°C  
1600  
V
average forward output current  
max. average forward current (per diode)  
forward current  
IDAV  
IFAVM  
IF25  
sine 180°  
rect.; d = 0.5  
DC  
TC = 80°C  
TC = 80°C  
TC = 25°C  
TC = 80°C  
106  
57  
106  
71.5  
A
A
A
A
forward current  
IF80  
DC  
max. forward surge current  
IFSM  
t = 10 ms; sine 50 Hz  
TVJ = 45°C  
TVJ = 125°C  
300  
170  
A
A
I2t value for fusing  
I2t  
t = 10 ms; sine 50 Hz  
TVJ = 45°C  
TVJ = 125°C  
450  
240  
A2s  
A2s  
total power dissipation  
forward voltage  
Ptot  
VF  
TC = 80°C  
110  
W
IF = 50 A  
TVJ = 25°C  
TVJ = 150°C  
1.39  
1.39  
V
V
reverse current  
IR  
VR = VRRM  
TVJ = 25°C  
TVJ = 150°C  
20  
1.5  
µA  
mA  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthJH  
(per diode)  
with heat transfer paste (IXYS test setup)  
0.64 K/W  
0.85 K/W  
0.72  
Module  
Symbol  
Ratings  
typ. max. Unit  
Definitions  
Conditions  
min.  
operating temperature  
max. virtual junction temperature  
storage temperature  
TVJ  
TVJM  
Tstg  
-40  
-40  
-40  
150  
150  
125  
°C  
°C  
°C  
isolation voltage  
VISOL  
Md  
IISOL < 1 mA; 50/60 Hz; 1 sec.  
3600  
2.5  
V~  
Nm  
g
mounting torque (M5)  
2
Weight  
35  
TC = 25°C unless otherwise stated  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100921b  
3 - 8  
VUM 33-06PH  
Outline Drawing  
Dimensions in mm (1 mm = 0.0394“)  
Logo  
XXX XX-XXXXX  
YYCW  
Part name Date Code  
Product Ordering  
Ordering  
Standard  
Part Name  
Marking on Product Delivering Mode Base Qty Ordering Code  
VUM 33-06PH Box 10 508843  
VUM 33-06PH  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100921b  
4 - 8  
VUM 33-06PH  
1.16  
1.12  
1.08  
1.04  
60  
50  
40  
30  
20  
10  
0
IDSS = 1 mA  
ID  
VDSS  
normalized  
[A]  
1.00  
TJ = 125°C  
0.96  
0.92  
TJ = 25°C  
-40 -20  
0
20 40 60 80 100 120 140  
2
3
4
5
6
7
VGS [V]  
TJ [°C]  
Fig. 1 Drain source breakdown voltage  
VDSS versus junction temperature  
Fig. 2 Typical transfer characteristics  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
TJ = 125°C  
TJ = 25°C  
VGS = 15/10 V  
7 V  
VGS = 15/10 V  
7 V  
6.5 V  
6.5 V  
ID  
ID  
6 V  
[A]  
[A]  
6 V  
5.5 V  
5 V  
5.5 V  
5 V  
0
2
4
6
8
10  
0
4
8
12  
VDS [V]  
16  
20  
VDS [V]  
Fig. 3 Typical output characteristics  
Fig. 4 Typical output characteristics  
300  
3.0  
2.5  
2.0  
2.4  
2.0  
VGS  
=
5 V  
5.5 V  
6 V  
VGS = 10 V  
ID = 20 A  
250  
200  
150  
100  
50  
TVJ = 125°C  
RDSon  
RDSon  
1.6  
RDSon  
RDSon  
RDSon  
normalized  
normalized  
normalized  
[mΩ]  
1.5  
1.0  
0.5  
6.5/7/10/15 V  
1.2  
0.8  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
ID [A]  
40  
50  
60  
TVJ [°C]  
Fig. 5 Drain source on-state resistance  
RDSon versus junction temperature  
Fig. 6 Drain source on-state resistance  
RDSon versus ID normalized to RDSon  
at VGS = 10 V and ID = 20 A  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100921b  
5 - 8  
VUM 33-06PH  
12  
10  
8
70  
60  
50  
40  
30  
20  
10  
0
ID = 60 A  
VDS = 380 V  
VGS  
ID  
6
[V]  
[A]  
4
2
0
0
50  
100  
150  
200  
-40 -20  
0
20 40 60 80 100 120 140 160  
TC [°C]  
QG [nC]  
Fig. 7 Gate charge characteristics  
Fig. 8 Drain current ID versus case temperature TC  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
200  
160  
80  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
70  
60  
50  
40  
30  
20  
10  
0
t
d(on)  
t
d(off)  
120  
80  
40  
0
Eoff  
RG = 4.7 Ω  
VDS = 380 V  
VGS = 0/10 V  
TVJ = 125°C  
Eon  
RG = 4.7 Ω  
VDS = 380 V  
VGS = 0/10 V  
TVJ = 125°C  
t
t
[ns]  
t
r
[ns]  
[mJ]  
[mJ]  
E
E
on  
off  
t
f
E
rec boost  
0
10  
20  
30  
40  
50  
0
10  
20  
30  
40  
50  
ID [A]  
ID [A]  
Fig. 9 Typ. turn-on energy and switching times  
Fig. 10 Typ. turn-off energy and switching times  
versus drain current, inductive switching  
versus drain current, inductive switching  
300  
0.6  
0.4  
0.2  
0.0  
100  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
ID  
= 20 A  
ID  
=
20 A  
VDS = 380 V  
VGS = 0/10 V  
TVJ = 125°C  
t
VDS = 380 V  
VGS = 0/10 V  
TVJ = 125°C  
250  
200  
150  
100  
50  
d(on)  
80  
60  
40  
20  
0
t
d(off)  
Eon  
,
Eoff  
t
Erec  
t
[ns]  
E
on  
[ns]  
[mJ]  
[mJ]  
t
r
E
off  
t
f
E
rec boost  
0
4
5
6
7
8
9
10  
11  
4
6
8
10  
RG [Ω]  
RG [Ω]  
Fig. 11 Typ. turn-on energy and switching times  
versus gate resistor, inductive switching  
Fig. 12 Typ. turn-off energy and switching times  
versus gate resistor, inductive switching  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100921b  
6 - 8  
VUM 33-06PH  
80  
70  
60  
50  
40  
30  
20  
18  
16  
14  
12  
10  
VR = 380 V  
TVJ = 125°C  
VR = 380 V  
TVJ = 125°C  
40 A  
trr  
IRM  
20 A  
10 A  
40 A  
20 A  
[ns]  
[A]  
10 A  
4
5
6
7
8
9
10  
11  
4
5
6
7
8
9
10  
11  
RG [Ω]  
RG [Ω]  
Fig. 13 Reverse recovery time trr of the boost  
diode versus RG of boost MOSFET  
Fig. 14 Reverse recovery current IRM of the boost  
diode versus RG of the boost MOSFET  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
VR = 380 V  
TVJ = 125°C  
VR = 380 V  
TVJ = 125°C  
40 A  
40 A  
QRR  
Erec  
[µC]  
20 A  
10 A  
20 A  
10 A  
[mJ]  
4
5
6
7
8
9
10  
11  
4
5
6
7
8
9
10  
11  
RG [Ω]  
RG [Ω]  
Fig. 15 Reverse recovery charge QRR IRM  
of the boost diode versus RG  
Fig. 16 Reverse recovery energy Erec  
of the boost diode versus RG  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
60  
50  
40  
30  
20  
10  
0
40 A  
20 A  
QRR  
IF  
[µC]  
[A]  
25°C  
125°C  
150°C  
10 A  
4.7 Ω  
5.6 Ω  
6.8 Ω  
10 Ω  
500  
550  
600  
650  
700  
750  
800  
850  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
VF [V]  
-di/dt [A(µs]  
Fig. 17 Typ. turn off characteristics  
of the boost diode versus di/dt  
Fig. 18 Forward characteristics boost diode  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100921b  
7 - 8  
VUM 33-06PH  
350  
300  
250  
200  
150  
100  
50  
500  
400  
300  
200  
100  
0
70  
60  
50  
40  
30  
20  
10  
0
f = 50 Hz  
VR = 0.8VRRM  
VR = 0 V  
I2t  
IFSM  
IF  
TVJ = 45°C  
TVJ = 45°C  
2
[A s]  
[A]  
[A]  
TVJ = 125°C  
TVJ = 125°C  
TVJ=125°C  
TVJ= 25°C  
0
0.001  
0.01  
0.1  
1
1
10  
0.0 0.4 0.8 1.2 1.6 2.0  
VF [V]  
t [s]  
t [ms]  
Fig. 19 Forward current vs.  
voltage drop of input  
rectifier diode  
Fig. 20 Non-repetitive peak  
surge current  
Fig. 21 I2t for fusing  
(Rectifier Diodes)  
(Rectifier Diodes)  
Boost Diode  
0.8  
Rectifier Diode  
0.6  
ZthJH  
Fig. 22  
Typ. transient thermal impedances of  
Boost Diode and Rectifier Diode  
0.4  
[K/W]  
0.2  
0.0  
1
10  
100  
1000  
10000  
t [ms]  
0.20  
0.15  
MOSFET  
ZthJH  
0.10  
Fig. 23  
Typ. transient thermal impedances of  
MOSFET  
[K/W]  
0.05  
0.00  
1
10  
100  
1000  
10000  
t [ms]  
IXYS reserves the right to change limits, test conditions and dimensions.  
20100921b  
© 2010 IXYS All rights reserved  
8 - 8  
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