AdvancedTechnicalInformation
IC25
= 7 A
HighVoltage
IXBF 9N140
IXBF 9N160
BIMOSFETTM
in High Voltage
VCES = 1400/1600 V
VCE(sat) = 4.9V
tf
ISOPLUSi4-PACTM
= 40 ns
Monolithic Bipolar MOS Transistor
1
5
Features
IGBT
• HighVoltageBIMOSFETTM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- fast switching for high frequency
operation
Symbol
VCES
Conditions
MaximumRatings
TVJ = 25°C to 150°C
IXBF 9N140
IXBF9N160
1400
1600
V
V
±
VGES
20
V
- reverse conduction capability
• ISOPLUS i4-PACTM
IC25
IC90
TC = 25°C
TC = 90°C
7
4
A
A
highvoltagepackage
- isolated back surface
15/0
ICM
VCEK
VGE
=
V; R = 100 W; TVJ = 125°C
12
0.8VCES
A
RBSOA, ClampGed inductive load; L = 100 µH
- enlarged creepage towards heatsink
-enlargedcreepagebetweenhigh
voltage pins
-applicationfriendlypinout
-highreliability
Ptot
TC = 25°C
70
W
- industry standard outline
Symbol
Conditions
CharacteristicValues
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
Applications
VCE(sat)
IC = 5 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
4.9
5.6
7
V
V
• switched mode power supplies
• DC-DC converters
• resonant converters
• lampballasts
• laser generators, x ray generators
VGE(th)
ICES
IC = 0.5 mA; VGE = VCE
4
8
V
VCE = 0.8VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.1 mA
mA
0.1
±
IGES
VCE = 0 V; VGE
=
20 V
500 nA
td(on)
tr
td(off)
tf
200
60
180
40
ns
ns
ns
ns
Inductive load, TVJ = 125°C
VCE = 960 V; IC = 5 A
15/0
VGE
=
V; RG = 100 W
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600V; VGE = 15 V; IC = 7 A
550
44
pF
nC
VF
(reverse conduction); IF = 5 A
3.6
V
RthJC
1.75 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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