High Voltage BIMOSFETTM
Monolithic Bipolar
IXBH 20N140 VCES = 1400/1600V
IXBH 20N160 IC25 = 20 A
MOSTransistor
VCE(sat) = 4.7 V typ.
N-Channel, Enhancement Mode
tfi
= 40 ns
C
E
TO-247 AD
G
G
C
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
Conditions
Maximum Ratings
Features
20N140
20N160
• Internationalstandardpackage
JEDEC TO-247 AD
VCES
VCGR
TJ = 25°C to 150°C
1400
1400
1600
1600
V
V
• HighVoltageBIMOSFETTM
TJ = 25°C to 150°C; RGE = 1 MW
- replaceshighvoltageDarlingtons
and series connected MOSFETs
- lower effective RDS(on)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
• Monolithicconstruction
IC25
IC90
ICM
TC = 25°C,
20
13
26
A
A
A
- highblockingvoltagecapability
- very fast turn-off characteristics
• MOS Gate turn-on
TC = 90°C
TC = 25°C, 1 ms
- drive simplicity
• Reverse conducting capability
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 27 W VCE = 0.8•VCES ICM = 24
Clamped inductive load, L = 100 mH
A
PC
TC = 25°C
200
W
Applications
TJ
-55 ... +150
150
°C
°C
°C
°C
• Flyback converters
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switched-modeandresonant-mode
powersupplies
TJM
Tstg
TL
-55 ... +150
300
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Md
1.15/10 Nm/lb.in.
• CRTdeflection
• Lampballasts
Weight
6
g
Symbol
BVCES
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Advantages
min. typ. max.
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Space savings
IC = 1 mA, VGE = 0 V
IC = 1.5 mA, VCE = VGE
20N140
20N160
1400
1600
V
V
• High power density
VGE(th)
ICES
4
8
V
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
300 mA
mA
1
IGES
VCE = 0 V, VGE = ±20 V
± 500 nA
VCE(sat)
IC = IC90, VGE = 15 V
4.7
5.4
6.5
V
V
TJ = 125°C
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