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5N25L-TN3-R

型号：

5N25L-TN3-R

品牌：

UTC[ Unisonic Technologies ]

页数：

6 页

PDF大小：

232 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
5N25  
Preliminary  
Power MOSFET  
3.8A, 250V LOGIC  
N-CHANNEL MOSFET  
DESCRIPTION  
The UTC 5N25 is an N-Channel enhancement MOSFET, it uses  
UTC’s advanced technology to provide customers with a minimum  
on-state resistance, high switching speed and low gate charge. It can  
also withstand high energy pulse in the avalanche and commutation  
modes.  
The UTC 5N25 is suitable for high efficiency switching DC/DC  
converter, motor control and switch mode power supply.  
FEATURES  
* RDS(ON)<1.2Ω @VGS=10V  
* Low gate charge ( Typ=14nC)  
* Low CRSS ( Typ=6.0pF)  
* High switching speed  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
5N25L-TN3-T  
5N25L-TN3-R  
Halogen Free  
1
2
D
D
3
S
S
5N25G-TN3-T  
5N25G-TN3-R  
TO-252  
TO-252  
G
G
Tube  
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain  
S: Source  
MARKING INFORMATION  
www.unisoniccom.tw  
1 of 6  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R502-852.b  
5N25  
Preliminary  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
250  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous  
3.8  
A
Drain Current  
Pulsed (Note 2)  
IDM  
9
A
Avalanche Current (Note 2)  
Single Pulsed (Note 3)  
Repetitive (Note 2)  
IAR  
3.8  
A
EAS  
85  
mJ  
mJ  
V/ns  
W
Avalanche Energy  
EAR  
3.7  
Peak Diode Recovery dv/dt (Note 4)  
TA=25°C  
dv/dt  
5.5  
2.5  
Power Dissipation TC=25°C  
Derate above 25°C  
PD  
37  
W
0.29  
-55~+150  
-55~+150  
W/°C  
°C  
°C  
Junction Temperature  
TJ  
Storage Temperature Range  
TSTG  
Notes:  
Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
1.  
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
3. L=6.2mH, IAS=3.8A, VDD=50V, RG=25Ω, Starting TJ=25°C.  
4. ISD≤4.5A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25°C.  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
θJA  
RATINGS  
50  
UNIT  
°C/W  
°C/W  
°C/W  
Junction to Ambient (Note)  
Junction to Ambient  
Junction to Case  
110  
θJC  
3.4  
Note: When mounted on the minimum pad size recommended (PCB Mount)  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
QW-R502-852.b  
www.unisonic.com.tw  
5N25  
Preliminary  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature  
Coefficient  
BVDSS  
ID=250µA, VGS=0V  
250  
V
△BVDSS/△TJ Reference to 25°C, ID=250µA  
IDSS VDS=250V, VGS=0V  
GS=+20V, VDS=0V  
0.18  
V/°C  
µA  
Drain-Source Leakage Current  
1
Forward  
Reverse  
V
+100 nA  
-100 nA  
Gate-Source Leakage Current  
IGSS  
VGS=-20V, VDS=0V  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
gFS  
VDS=VGS, ID=250µA  
2
4
V
Ω
Ω
S
VGS=10V, ID=1.9A  
0.74 1.2  
0.92 1.25  
3.35  
Static Drain-Source On-State Resistance  
(Note 1)  
VGS=5V, ID=1.9A  
VDS=30V, ID=1.9A  
Forward Transconductance  
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
COSS  
CRSS  
250 325 pF  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Total Gate Charge  
VGS=0V, VDS=25V, f=1.0MHz  
40  
6
50  
8
pF  
pF  
QG  
QGS  
QGD  
tD(ON)  
tR  
14  
1.2  
2.4  
28  
20 nC  
nC  
VGS=5V, VDS=160V, ID=4.5A  
(Note 1, 2)  
Gate to Source Charge  
Gate to Drain Charge  
Turn-ON Delay Time  
Rise Time  
nC  
40  
80  
ns  
ns  
24  
VDD=100V, ID=4.5A, RG=25Ω  
(Note 1, 2)  
Turn-OFF Delay Time  
Fall-Time  
tD(OFF)  
tF  
80 110 ns  
20  
90  
ns  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Maximum Body-Diode Continuous Current  
Maximum Body-Diode Pulsed Current  
Drain-Source Diode Forward Voltage  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
IS  
3.8  
9
A
A
ISM  
VSD  
tRR  
IS=3.8A, VGS=0V  
1.5  
V
95  
ns  
µC  
IS=4.5A, VGS=0V, dIF/dt=100A/µs  
(Note 1)  
QRR  
0.3  
Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
QW-R502-852.b  
www.unisonic.com.tw  
5N25  
Preliminary  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
VGS  
5V  
Same Type  
as DUT  
QG  
12V  
200nF  
VDS  
QGS  
QGD  
50kΩ  
300nF  
VGS  
DUT  
3mA  
Charge  
Gate Charge Waveforms  
Gate Charge Test Circuit  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R502-852.b  
www.unisonic.com.tw  
5N25  
Preliminary  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS(Cont.)  
+
DUT  
VDS  
RG  
L
-
ISD  
VGS  
VDD  
Driver  
Same Type  
as DUT  
dv/dt controlled by RG  
ISD controlled by pulse period  
Gate Pulse Width  
Gate Pulse Period  
VGS  
D=  
10V  
(Driver)  
I
FM, Body Diode Forward Current  
ISD  
di/dt  
(DUT)  
IRM  
Body Diode Reverse Current  
VDS  
(DUT)  
Body Diode Recovery dv/dt  
VSD  
VDD  
Body Diode Forward  
Voltage Drop  
Peak Diode Recovery dv/dt Test Circuit and Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
QW-R502-852.b  
www.unisonic.com.tw  
5N25  
Preliminary  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
QW-R502-852.b  
www.unisonic.com.tw  
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