SMD Type
IC
Product specification
5N20V
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
VDSS
IDSS
Test conditions
VGS=0V,ID=1mA
Min
20
Typ Max
Unit
V
VDS=18V,VGS=0V
1
μA
nA
V
IGSS
VGS=±12V,VDS=0V
±100
Gate Threshold Voltage
VGS(th) VDS=VGS,,ID=250μA
0.6
VGS=4.5V,ID=2.5A
RDS(ON)
30
37
40
45
mΩ
mΩ
pF
pF
pF
ns
Drain- Source on-state Resistance
VGS=2.7V,ID=2.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Ciss
460
200
50
VDS = 15V, VGS = 0V,f =1.0MHZ
Coss
Crss
tD(on)
tr
7
33
ns
VDD=10V,ID=2.5A,VGS=4.5V,
RGEN=4.7Ω
Turn-Off Delay Time
Fall Time
tD(off)
tf
27
ns
10
ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Diode Forward Voltage
Diode Forward Current
Qg
8.5
1.8
2.4
11.5
nC
nC
nC
V
VDS = 10V, ID = 4.5A,VGS = 4.5V
IS=5A, VGS=0
Qgs
Qgd
VSD
1.2
5
IS
A
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