5N25Z
Preliminary
Power MOSFE
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
250
V
Breakdown
Coefficient
Voltage
Temperature
△BVDSS/△TJ Reference to 25°C, ID=250µA
0.18
V/°C
Drain-Source Leakage Current
IDSS
IGSS
VDS=250V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
1
µA
Forward
Reverse
+10 µA
-10 µA
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=1.9A
VGS=5V, ID=1.9A
VDS=30V, ID=1.9A
2
4
V
Ω
Ω
S
0.78 1.2
0.92 1.25
3.35
Static Drain-Source On-State Resistance
(Note 1)
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
250 325 pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
VGS=0V, VDS=25V, f=1.0MHz
40
6
50
8
pF
pF
QG
QGS
QGD
tD(ON)
tR
14
4
20 nC
nC
VGS=10V, VDS=30V, ID=1.3A,
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
IG=100µA (Note 1, 2)
2.7
30
26
nC
35
40
ns
ns
VDD=30V, ID=0.5A, RG=25Ω,
VGS=10V (Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
90 110 ns
27
40
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
3.8
9
A
A
ISM
VSD
tRR
IS=3.8A, VGS=0V
1.5
V
95
ns
µC
IS=4.5A, VGS=0V, dIF/dt=100A/µs
(Note 1)
QRR
0.3
Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R502-853.b
www.unisonic.com.tw
