IXBOD2
BOD2
Ratings
Symbol Definitions
Conditions
min. typ. max.
drain current
ID
VD = 0.8·VBO
TVJ = 2±°C
VJ = 12±°C
10
200
µA
µA
T
breakover voltage
RMS current
VBO
IRMS
VBO (TVJ) = VBO, 2±°C [1 + KT (TVJ - 2±°C)]
f = ±0 Hz amb = ±0°C
V
A
T
1.4
pins soldered to printed circuit (conductor 0.03±x2mm)
maximum average forward current
maximum pulsed source current
I2t value for fusing
IFAVM
ISM
I2t
0.9
2±0
A
A
A2s
tp = 0.1 ms; non repetitive
tp = 0.1 ms
TVJ = 1±0°C
TVJ = 1±0°C
3.1
KT
KP
0.7·10-3
K-1
temperature coefficient of VBO
coefficient for energy per pulse EP (material constant)
700 K/Ws
thermal resistance junction to ambient
breakover current
RthJA
natural convection
with air speed 2 m/s
60
4±
K/W
K/W
IBO
TVJ = 2±°C
TVJ = 1±0°C
1±
6
mA
mA
holding current
IH
TVJ = 2±°C
TVJ = 1±0°C
20
12
mA
mA
holding voltage
VH
TVJ = 2±°C
4
8
V
critical rate of rise of voltage
(dv/dt)cr
VD = 0.9·VBO
TVJ = 2±°C
TVJ = 1±0°C
3000
1000
V/µs
V/µs
critical rate of rise of curent
turn-off time
(di/dt)cr
IT = 100 A; VD = VBO; f = ±0 Hz
IT = 600 A; non repetitive
TVJ = 1±0°C
200
±00
A/µs
A/µs
tq
VD = 0.7±·VBO; VR = 0 V; IT = 100 A TVJ = 12±°C
200
µs
dv/dt(lin.) = ±000 V/µs; di/dt = -±00 A/µs
forward voltage drop
VT
IT = 10 A
TVJ = 12±°C
TVJ = 1±0°C
1.3
1.2
V
V
VT0
rT
0.7±
0.0±
V
W
threshold voltage
slope resistance
for power-loss calculation only
TVJ = 1±0°C
68 kW
400 nH
Vd
100 nF
IXBOD
It = 400 A, di/dt = 2000 A/µs
IXYS reserves the right to change limits, test conditions and dimensions.
Data according ot IEC 60747 and per semiconductor unless otherwise specified
20130822a
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