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IXBN42N170A

型号：

IXBN42N170A

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

201 K

下载PDF手册
Preliminary Technical Information  
High Voltage, High Gain  
VCES = 1700V  
IC90 = 21A  
VCE(sat) ≤ 6.0V  
IXBN42N170A  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
tfi  
= 20ns  
E
SOT-227B, miniBLOC  
E153432  
E c  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TC = 25°C to 150°C  
1700  
1700  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
E c  
C
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1ms  
38  
21  
265  
A
A
A
G = Gate, C = Collector, E = Emitter  
c
either emitter terminal can be used as  
Main or Kelvin Emitter  
SSOA  
(RBSOA)  
V
GE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 84  
1360  
A
V
Clamped Inductive Load  
TSC  
(SCSOA)  
VGE = 15 V, VCES = 1200V, TJ = 125°C  
RG = 10Ω, non repetitive  
10  
μs  
Features  
PC  
TC = 25°C  
313  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z International Standard Package  
z miniBLOC, with Aluminium Nitride  
Isolation  
TJM  
Tstg  
-55 ... +150  
z Square RBSOA  
VISOL  
50/60Hz  
IISOL ≤ 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
z 2500V~ Isolation Voltage  
z
High Blocking Voltage  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z International Standard Package  
z Anti-Parallel Diode  
Weight  
30  
g
z Low Conduction Losses  
Advantages  
z Low Gate Drive Requirement  
z High Power Density  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 750μA, VCE = VGE  
1700  
2.5  
V
V
5.5  
z Switch-Mode and Resonant-Mode  
Power Supplies  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
50 μA  
1.5 mA  
z Uninterruptible Power Supplies (UPS)  
z AC Motor Drives  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z Capacitor Discharge Circuits  
z AC Switches  
VCE(sat)  
IC = IC90, VGE = 15V, Note 1  
5.2  
5.3  
6.0  
V
V
TJ = 125°C  
© 2012 IXYS CORPORATION, All Rights Reserved  
DS98933A(11/12)  
IXBN42N170A  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
SOT-227B miniBLOC (IXXN)  
Min.  
Typ.  
Max.  
gfs  
IC = IC90, VCE = 10V, Note 1  
14  
23  
S
Cies  
Coes  
Cres  
3920  
275  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
107  
Qg(on)  
Qge  
Qgc  
188  
23  
nC  
nC  
nC  
IC = IC90, VGE = 15V, VCE = 0.5 • VCES  
80  
td(on)  
tri  
Eon  
td(off)  
tfi  
19  
17  
ns  
ns  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15V  
3.43  
200  
20  
mJ  
ns  
VCE = 0.5 • VCES, RG = 1Ω  
Diode Type = DH40-18A  
Note 2  
ns  
Eof  
0.43  
mJ  
f
td(on)  
tri  
19  
14  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15V  
Eon  
td(off)  
tfi  
5.40  
226  
82  
mJ  
ns  
VCE = 0.5 • VCES, RG = 1Ω  
Diode Type = DH40-18A  
Note 2  
ns  
Eoff  
0.83  
mJ  
RthJC  
RthCS  
0.40 °C/W  
°C/W  
0.05  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
trr  
IF = IC90, VGE = 0V  
5.0  
V
ns  
A
330  
15  
IF = 25A, VGE = 0V, -diF/dt = 50A/μs  
IRM  
VR = 100V, VGE = 0V  
Note  
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBN42N170A  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
180  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
12V  
VGE = 15V  
12V  
10V  
11V  
9V  
8V  
10V  
9V  
8V  
60  
7V  
6V  
40  
20  
7V  
6V  
0
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
VGE = 15V  
12V  
10V  
9V  
I C = 84A  
8V  
I C = 42A  
7V  
6V  
5V  
I C = 21A  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = 25ºC  
I C = 84A  
TJ = 125ºC  
25ºC  
- 40ºC  
42A  
21A  
6
4
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
6
7
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXBN42N170A  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 850V  
I C = 42A  
25ºC  
I G = 10mA  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Capacitance  
220  
200  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
TJ = 25ºC  
J
TJ = 125ºC  
C
oes  
60  
C
res  
40  
20  
= 1 MHz  
5
f
0
10  
0
2
4
6
8
10  
12  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VF - Volts  
Fig. 11. Reverse-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
1
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0.1  
0.01  
TJ = 125ºC  
RG = 10Ω  
dv / dt < 10V / ns  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
VCE - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBN42N170A  
Fig. 13. Forward-Bias Safe Operating Area @ T = 25ºC  
C
Fig. 14. Forward-Bias Safe Operating Area @ T = 75ºC  
C
1000  
100  
10  
1000  
100  
10  
V
Limit  
V
Limit  
CE(sat)  
CE(sat)  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
1
1
10ms  
DC  
T
T
= 150ºC  
= 25ºC  
T
T
= 150ºC  
= 75ºC  
J
J
10ms  
DC  
0.1  
0.01  
0.1  
0.01  
C
C
Single Pulse  
Single Pulse  
1
10  
100  
1,000  
10,000  
1
10  
100  
1,000  
10,000  
VCE - Volts  
VCE - Volts  
Fig. 15. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 16. Inductive Switching Energy Loss vs.  
Collector Current  
7
6
5
4
3
2
1
0
32  
28  
24  
20  
16  
12  
8
5
4
3
2
1
25  
20  
15  
10  
5
E
E
on - - - -  
off  
E
E
on - - - -  
off  
T
J
= 125ºC , VGE = 15V  
TJ = 125ºC , VGE = 15V  
CE = 850V  
TJ = 125ºC  
VCE = 850V  
V
I C = 84A  
TJ = 25ºC  
I C = 42A  
4
0
0
1
2
3
4
5
6
7
8
9
10  
20  
30  
40  
50  
IC - Amperes  
60  
70  
80  
RG - Ohms  
Fig. 18. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Inductive Switching Energy Loss vs.  
Junction Temperature  
6
5
4
3
2
1
0
28  
24  
20  
16  
12  
8
140  
120  
100  
80  
450  
tf i  
t d(off)  
- - - -  
E
E
on - - - -  
off  
400  
350  
300  
250  
200  
150  
100  
TJ = 125ºC, GE = 15V  
V
R
= 1Ω , VGE = 15V  
G
CE = 850V  
V
VCE = 850V  
I C = 84A  
I C = 84A  
60  
I C = 42A  
40  
I C = 42A  
20  
0
4
1
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXBN42N170A  
Fig. 20. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 19. Inductive Turn-off  
Switching Times vs. Collector Current  
120  
100  
80  
220  
200  
180  
160  
140  
120  
140  
120  
100  
80  
260  
240  
220  
200  
180  
160  
140  
120  
t f i  
RG = 1Ω , VGE = 15V  
CE = 850V  
t d(off)  
- - - -  
t f i  
td(off) - - - -  
RG = 1Ω , VGE = 15V  
V
VCE = 850V  
TJ = 125ºC  
60  
I C = 42A, 84A  
60  
TJ = 25ºC  
40  
40  
20  
0
20  
20  
30  
40  
50  
IC - Amperes  
60  
70  
80  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
Fig. 22. Inductive Turn-on Switching Times  
vs. Collector Current  
Fig. 21. Inductive Turn-on Switching Times  
vs. Gate Resistance  
120  
100  
80  
60  
40  
20  
0
28  
26  
24  
22  
20  
18  
16  
160  
46  
42  
38  
34  
30  
26  
22  
18  
14  
tr i  
td(on) - - - -  
tr i  
TJ = 125ºC, VGE = 15V  
CE = 850V  
td(on) - - - -  
140  
120  
100  
80  
RG = 1Ω , VGE = 15V  
CE = 850V  
V
V
I C = 84A  
TJ = 25ºC  
60  
I C = 42A  
40  
TJ = 125ºC  
20  
0
1
2
3
4
5
6
7
8
9
10  
20  
30  
40  
50  
60  
70  
80  
RG - Ohms  
IC - Amperes  
Fig. 23. Inductive Turn-on  
Switching Times vs. Junction Temperature  
160  
140  
120  
100  
80  
26  
25  
24  
23  
22  
21  
20  
19  
18  
tr i  
RG = 1Ω , VGE = 15V  
CE = 850V  
td(on)  
- - - -  
V
I C = 84A  
60  
I C = 42A  
40  
20  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: B_42N170A(7N)11-12-12  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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