IXBOD 1 -06...10
VBO = 600-1000V
IAVM = 0.9 A
Single Breakover Diode
VBO
V
Standard
Types
A
K
600 ±50
700 ±50
800 ±50
900 ±50
1000 ±50
IXBOD 1 -06
IXBOD 1 -07
IXBOD 1 -08
IXBOD 1 -09
IXBOD 1 -10
Symbol
Conditions Ratings
ID
TVJ = 125°C;
V = 0,8x VBO
20
µA
VBO
IRMS
VBO(TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)]
f = 50 HZ;
Tamb = 50°C
1.4
A
connection pins soldered to printed circuit
(conductor 0,035x2mm)
IAVM
ISM
I²t
0.9
200
2
A
A
tp = 0.1 ms;
tp = 0.1 ms;
Tamb = 50°C non repetitive
Tamb = 50°C
A2s
Tamb
Tstg
-40...+125
-40...+125
125
°C
°C
TVJm
°C
Dimensions in mm (1 mm = 0.0394")
KT Temperatur coefficient of VBO
KP coefficient for energy per pulse EP (material constant)
2·10-3
K-1
700
K/Ws
RthJA
- natural convection
- with air speed 2 m/s
60
45
K/W
K/W
Weight
1
g
Symbol
Conditions
Characteristic Values
IBO
TVJ
TVJ
TVJ
TVJ
=
=
=
=
25°C
25°C
25°C
50°C;
15
30
mA
mA
V
IH
VH
4 - 8
(dv/dt)C
(di/dt)C
VD = 0.67·(VBO + 100V)
> 1000
200
V/µs
A/µs
K
A
TVJ = 125°C;
TVJ = 125°C
VD = VBO ; IT = 80A; f = 50 Hz
tq(typ)
VD = 0.67·VBO ; VR = 0V
150
µs
dV/dt(lin.) = 200V/µs; IT = 80A; di/dt = -10A/µs
VT
TVJ =125°C; IT = 5A
1.7
V
V(TO)
rT
For power-loss calculations only
TVJ = 125°C
1.1
0.12
V
Ω
IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747
© 2000 IXYS All rights reserved
H - 2
