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IXBF20N300

型号：

IXBF20N300

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

198 K

下载PDF手册
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES  
IC110  
= 3000V  
= 14A  
IXBF20N300  
VCE(sat) ≤ 3.2V  
(Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
3000  
3000  
V
V
1
2
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
Isolated Tab  
5
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
1 = Gate  
5 = Collector  
IC25  
IC110  
ICM  
TC = 25°C  
34  
14  
A
A
A
2 = Emitter  
TC = 110°C  
TC = 25°C, 1ms  
150  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 20Ω  
Clamped Inductive Load  
ICM = 130  
1500  
A
V
PC  
TC = 25°C  
150  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z
TJM  
Tstg  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
4000V~ Electrical Isolation  
High Blocking Voltage  
-55 ... +150  
z
z
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
z
z
FC  
Mounting Force  
20..120 / 4.5..27  
Nm/lb.in.  
High Peak Current Capability  
Low Saturation Voltage  
VISOL  
Weight  
50/60Hz, 1 Minute  
4000  
5
V~  
g
Advantages  
z
Low Gate Drive Requirement  
High Power Density  
z
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Applications  
Min.  
3000  
2.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
z
Switch-Mode and Resonant-Mode  
5.0  
V
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
z
35 μA  
1.5 mA  
z
Note 2, TJ = 125°C  
z
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z
AC Switches  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
2.7  
3.2  
3.2  
V
V
TJ = 125°C  
© 2012 IXYS CORPORATION, All Rights Reserved  
DS100125B(06/12)  
IXBF20N300  
ISOPLUS i4-PakTM (HV) Outline  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
gfS  
IC = 20A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
11  
18  
S
Cies  
Coes  
Cres  
2230  
92  
pF  
pF  
pF  
33  
Qg  
105  
13  
nC  
nC  
nC  
Qge  
Qgc  
IC = 20A, VGE = 15V, VCE = 1000V  
45  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
64  
210  
300  
504  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
Pin 1 = Gate  
IC = 20A, VGE = 15V  
Pin2 = Emitter  
Pin 3 = Collector  
Tab 4 = Isolated  
VCE = 1250V, RG = 10Ω  
68  
540  
300  
395  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 20A, VGE = 15V  
VCE = 1250V, RG = 10Ω  
RthJC  
RthCS  
0.83 °C/W  
°C/W  
0.15  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
trr  
IF = 20A, VGE = 0V  
2.1  
V
μs  
A
1.35  
30  
IF = 10A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
IRM  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Device must be heatsunk for high temperature leakage current  
measurements to avoid thermal runaway.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBF20N300  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
300  
250  
200  
150  
100  
50  
VGE = 25V  
20V  
VGE = 25V  
20V  
15V  
15V  
10V  
10V  
5V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
150  
8.5  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
40  
35  
30  
25  
20  
15  
10  
5
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 25V  
20V  
VGE = 15V  
15V  
I C = 40A  
I C = 20A  
10V  
I C = 10A  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
I C = 40A  
TJ = 125ºC  
25ºC  
20A  
- 40ºC  
10A  
0
5
7
9
11  
13  
15  
VGE - Volts  
17  
19  
21  
23  
25  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXBF20N300  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
28  
24  
20  
16  
12  
8
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 25ºC  
TJ = 125ºC  
4
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
0
0.5  
1
1.5  
VF - Volts  
2
2.5  
3
IC - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
16  
14  
12  
10  
8
10,000  
1,000  
100  
= 1 MHz  
f
VCE = 1kV  
C = 20A  
I G = 10mA  
I
C
ies  
C
oes  
6
4
2
C
res  
0
10  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
1
140  
120  
100  
80  
D = 0.50  
D = 0.20  
D = 0.10  
D = 0.05  
0.1  
60  
D = tp / T  
tp  
40  
TJ = 125ºC  
G = 20Ω  
dv / dt < 10V / ns  
R
D = 0.02  
D = 0.01  
20  
T
Single Pulse  
0.0001  
0
0.01  
250  
500  
750 1000 1250 1500 1750 2000 2250 2500 2750 3000  
VCE - Volts  
0.000001 0.00001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBF20N300  
Fig. 14. Resistive Turn-on Rise Time vs.  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Collector Current  
700  
600  
500  
400  
300  
200  
100  
0
700  
600  
500  
400  
300  
200  
100  
0
RG = 10Ω , VGE = 15V  
RG = 10Ω , VGE = 15V  
VCE = 1250V  
VCE = 1250V  
TJ = 125ºC  
I C = 20A  
I C = 40A  
TJ = 25ºC  
10  
25  
10  
15  
20  
25  
30  
35  
40  
25  
10  
10  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
850  
800  
750  
700  
650  
600  
550  
500  
450  
200  
700  
600  
500  
400  
300  
200  
100  
350  
330  
310  
290  
270  
250  
230  
tf  
t
d(off) - - - -  
t r  
t
180  
160  
140  
120  
100  
80  
d(on) - - - -  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 20A  
I C = 20A, 40A  
I C = 40A  
60  
40  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
20  
30  
40  
50  
60  
70  
80  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Collector Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
1200  
1000  
800  
600  
400  
200  
0
460  
420  
380  
340  
300  
260  
220  
600  
550  
500  
450  
400  
350  
300  
250  
200  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
tf  
td(off  
) - - - -  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 10Ω, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 20A  
I C = 40A  
TJ = 125ºC, 25ºC  
30  
20  
30  
40  
50  
60  
70  
80  
15  
20  
25  
IC - Amperes  
35  
40  
RG - Ohms  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_20N300(5P)6-05-12-B  
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