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IXBF20N360

型号：

IXBF20N360

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

229 K

下载PDF手册
Preliminary Technical Information  
High Voltage,  
VCES = 3600V  
IC110 = 18A  
VCE(sat) 3.4V  
IXBF20N360  
High Frequency,  
BiMOSFETTM Monolithic  
Bipolar MOS Transistor  
(Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
3600  
3600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1M  
1
2
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
Isolated Tab  
5
IC25  
IC110  
ICM  
TC = 25°C  
45  
18  
A
A
A
1 = Gate  
2 = Emitter  
5 = Collector  
TC = 110°C  
TC = 25°C, 1ms  
220  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 10  
Clamped Inductive Load  
I
= 160  
A
V
VCECSM1500  
Features  
TSC  
VGE = 15V, TJ = 125°C,  
(SCSOA)  
RG = 52, VCE =1500V, Non-Repetitive  
10  
μs  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
PC  
TC = 25°C  
230  
W
Isolated Mounting Surface  
4000V~ Electrical Isolation  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
High Blocking Voltage  
-55 ... +150  
High Frequency Operation  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
FC  
Mounting Force with Clip  
20..120 / 4.5..27  
N/lb  
V~  
g
VISOL  
Weight  
50/60Hz, 5 Seconds  
4000  
8
Low Gate Drive Requirement  
High Power Density  
Applications  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
3600  
3.0  
Typ.  
Max.  
Switch-Mode and Resonant-Mode  
Power Supplies  
BVCES  
VGE(th)  
ICES  
IC  
= 250μA, VGE = 0V  
V
V
Uninterruptible Power Supplies  
(UPS)  
IC = 250μA, VCE = VGE  
5.0  
VCE = 3000V, VGE = 0V  
25 μA  
μA  
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
Note 2, TJ = 125°C  
125  
IGES  
VCE = 0V, VGE = ± 20V  
IC = 20A, VGE = 15V, Note 1  
TJ = 125°C  
±200 nA  
VCE(SAT)  
2.9  
3.6  
3.4  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100567A(12/13)  
IXBF20N360  
ISOPLUS i4-PakTM (HV) Outline  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
gfs  
IC = 20A, VCE = 10V, Note 1  
10  
17  
S
Cies  
Coes  
Cres  
2045  
110  
50  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
110  
13  
nC  
nC  
nC  
IC = 20A, VGE = 15V, VCE = 1000V  
43  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
14  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 20A, VGE = 15V  
15.50  
238  
mJ  
ns  
Pin 1 = Gate  
Pin2 =Emitter  
Pin3=Collector  
Tab4=Isolated  
VCE = 1500V, RG = 10  
206  
ns  
Note 3  
Eof  
4.30  
mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
20  
22  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 20A, VGE = 15V  
16.10  
247  
mJ  
ns  
VCE = 1500V, RG = 10  
216  
ns  
Note 3  
Eoff  
4.15  
mJ  
td(on)  
tr  
td(off)  
tf  
30  
ns  
ns  
Resistive load, TJ = 25°C  
325  
IC = 20A, VGE = 15V  
165  
ns  
ns  
VCE = 960V, RG = 10  
1045  
td(on)  
tr  
td(off)  
tf  
32  
ns  
ns  
Resistive load, TJ = 125°C  
890  
IC = 20A, VGE = 15V  
185  
ns  
ns  
VCE = 960V, RG = 10  
1100  
RthJC  
RthCS  
0.54 °C/W  
°C/W  
0.15  
PRELIMANARYTECHNICAL  
INFORMATION  
Reverse Diode  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
The product presented herein is under  
development. The Technical Specifica-  
tions offered are derived from a subjec-  
tive evaluation of the design, based upon  
prior knowledge and experience, and  
constitute a "considered reflection" of the  
anticipated result. IXYS reserves the  
right to change limits, test conditions, and  
dimensions without notice.  
Min.  
Typ.  
Max  
VF  
IF = 20A, VGE = 0V, Note 1  
3.5  
V
trr  
1.7  
35  
30  
μs  
A
IF = 10A, VGE = 0V, -diF/dt = 100A/μs  
IRM  
QRM  
VR = 100V, VGE = 0V  
μC  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Device must be heatsunk for high-temperature leakage current  
measurements to avoid thermal runaway.  
3. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBF20N360  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
V
= 25V  
V
= 25V  
GE  
GE  
17V  
15V  
240  
200  
160  
120  
80  
19V  
15V  
13V  
11V  
21V  
19V  
9V  
13V  
11V  
7V  
9V  
7V  
40  
6V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
40  
35  
30  
25  
20  
15  
10  
5
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 25V  
GE  
21V  
17V  
15V  
13V  
11V  
V
= 15V  
GE  
9V  
I
= 40A  
C
I
= 20A  
C
7V  
I
= 10A  
C
6V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
8
7
6
5
4
3
2
60  
50  
40  
30  
20  
10  
0
T
J
= 25ºC  
I
= 40A  
20A  
C
T
J
=125ºC  
25ºC  
- 40ºC  
10A  
3.5  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
9.5  
6
7
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXBF20N360  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
T
J
= - 40ºC  
VCE = 1000V  
C = 20A  
IG = 10mA  
I
25ºC  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Capacitance  
10,000  
1,000  
100  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
T
= 25ºC  
125ºC  
J
J
C
C
ies  
V
= 0V  
GE  
oes  
V
= 15V  
GE  
C
res  
10  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VF - Volts  
Fig. 11. Reverse-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
1
180  
160  
140  
120  
100  
80  
0.1  
60  
T
J
= 125ºC  
40  
R
G
= 10Ω  
20  
dv / dt < 10V / ns  
0
0.01  
200  
600  
1000  
1400  
1800  
2200  
2600  
3000  
3400  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
Pulse Width - Seconds  
IXBF20N360  
Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC  
1000  
100  
10  
1000  
100  
10  
V
Limit  
V
Limit  
CE(sat)  
CE(sat)  
25µs  
25µs  
100µs  
100µs  
1
1
1ms  
1ms  
T = 150ºC  
J
T = 150ºC  
J
0.1  
0.01  
0.1  
0.01  
T
= 25ºC  
C
T = 75ºC  
C
10ms  
10ms  
Single Pulse  
Single Pulse  
100ms  
DC  
100ms  
DC  
1,000  
1
10  
100  
10,000  
1
10  
100  
1,000  
10,000  
VCE - Volts  
VCE - Volts  
Fig. 15. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 16. Inductive Switching Energy Loss vs.  
Collector Current  
14  
12  
10  
8
56  
48  
40  
32  
24  
16  
8
18  
16  
14  
12  
10  
8
46  
42  
38  
34  
30  
26  
22  
18  
14  
10  
E
E
on - - - -  
off  
E
E
on - - - -  
off  
T = 125ºC , V = 15V  
J
GE  
T = 125ºC , V = 15V  
J
GE  
V
= 1500V  
CE  
V
= 1500V  
CE  
I
= 40A  
C
T = 125ºC  
J
6
T = 25ºC  
J
6
4
4
2
I
= 20A  
40  
C
2
0
0
0
10  
15  
20  
25  
30  
35  
45  
50  
10  
15  
20  
25  
30  
35  
40  
RG - Ohms  
IC - Amperes  
Fig. 18. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Inductive Switching Energy Loss vs.  
Junction Temperature  
420  
380  
340  
300  
260  
220  
180  
140  
100  
900  
800  
700  
600  
500  
400  
300  
200  
100  
16  
14  
12  
10  
8
40  
36  
32  
28  
24  
20  
16  
12  
8
E
E
on - - - -  
t f i  
t
d(off) - - - -  
off  
G
R
= 10Ω , V = 15V  
GE  
T
J
= 125ºC,  
= 15V  
VGE  
V
= 1500V  
CE  
= 1500V  
VCE  
I
= 40A  
C
I
= 40A  
C
I
= 20A  
C
6
4
I
= 20A  
105  
C
2
0
25  
35  
45  
55  
65  
75  
85  
95  
115  
125  
10  
15  
20  
25  
30  
35  
40  
45  
50  
RG - Ohms  
TJ - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXBF20N360  
Fig. 20. Inductive Turn-off Switching Times vs.  
Fig. 19. Inductive Turn-off Switching Times vs.  
Collector Current  
Junction Temperature  
t
d(off) - - - -  
400  
360  
320  
280  
240  
200  
160  
120  
280  
270  
260  
250  
240  
230  
220  
210  
400  
360  
320  
280  
240  
200  
160  
120  
80  
280  
270  
260  
250  
240  
230  
220  
210  
200  
t f i  
t
d(off) - - - -  
t f i  
R
G
= 10Ω , V = 15V  
R
G
= 10Ω , V = 15V  
GE  
GE  
V
= 1500V  
V
= 1500V  
CE  
CE  
I
= 40A  
C
T
J
= 125ºC  
I
= 20A  
C
T
J
= 25ºC  
I
= 40A  
55  
C
25  
35  
45  
65  
75  
85  
95  
105  
115  
125  
10  
15  
20  
25  
30  
35  
40  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 22. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 21. Inductive Turn-on Switching Times vs.  
Gate Resistance  
60  
50  
40  
30  
20  
10  
0
34  
30  
26  
22  
18  
14  
10  
120  
100  
80  
60  
40  
20  
0
70  
60  
50  
40  
30  
20  
10  
t r i  
t d(on)  
- - - -  
t r i  
t
d(on) - - - -  
R
G
= 10Ω , V = 15V  
GE  
T
J
= 125ºC, V = 15V  
GE  
V
= 1500V  
CE  
V
= 1500V  
CE  
I
= 40A  
C
T
J
= 125ºC  
I
= 20A  
C
T
J
= 25ºC  
10  
15  
20  
25  
30  
35  
40  
45  
50  
10  
15  
20  
25  
30  
35  
40  
RG - Ohms  
IC - Amperes  
Fig. 23. Inductive Turn-on Switching Times vs.  
Junction Temperature  
70  
60  
50  
40  
30  
20  
10  
0
31  
28  
25  
22  
19  
16  
13  
10  
t r i  
t d(on)  
- - - -  
R
G
= 10Ω , V = 15V  
GE  
V
= 1500V  
CE  
I
C
= 40A  
I
C
= 20A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: B_20N360(H7-B11) 10-17-13  
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