IXBF14N300
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfS
IC = 14A, VCE = 10V, Note 1
8
13
S
Cies
Coes
Cres
1275
50
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
18
Qg
62
7
nC
nC
nC
Qge
Qgc
IC = 14A, VGE = 15V, VCE = 1500V
30
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
40
380
ns
ns
ns
ns
Resistive Switching Times, TJ = 25°C
IC = 14A, VGE = 15V
166
VCE = 960V, RG = 20
1900
64
746
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 14A, VGE = 15V
180
VCE = 960V, RG = 20
1730
RthJC
RthCS
1.04 °C/W
°C/W
0.15
Reverse Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max
VF
IF = 14A, VGE = 0V, Note 1
2.7
V
trr
1.4
23
16
μs
A
IF = 7A, VGE = 0V, -diF/dt = 100A/μs
IRM
QRM
VR = 100V, VGE = 0V
μC
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
