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IXBF14N300

型号：

IXBF14N300

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

189 K

下载PDF手册
Advance Technical Information  
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 3000V  
IC90 = 14A  
VCE(sat) 2.7V  
IXBF14N300  
(Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
3000  
3000  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
1
2
Isolated Tab  
5
IC25  
IC90  
ICM  
TC = 25°C  
28  
14  
98  
A
A
A
TC = 90°C  
1 = Gate  
2 = Emitter  
5 = Collector  
TC = 25°C, 1ms  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 20  
Clamped Inductive Load  
ICM = 120  
VCE 1500  
A
V
TSC  
(SCSOA)  
VGE = 15V, TJ = 125°C,  
RG = 82, VCE =1500V, Non-Repetitive  
Features  
10  
μs  
PC  
TC = 25°C  
120  
W
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
4000V~ Electrical Isolation  
High Blocking Voltage  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
High Peak Current Capability  
Low Saturation Voltage  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
20..120 / 4.5..27  
N/lb.  
V~  
g
Advantages  
VISOL  
Weight  
50/60Hz, 5 Seconds  
4000  
5
Low Gate Drive Requirement  
High Power Density  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Applications  
Min.  
3000  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC  
IC  
= 250μA, VGE = 0V  
= 250μA, VCE = VGE  
V
V
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
5.0  
VCE = VCES, VGE = 0V  
Note 2, TJ = 125°C  
VCE = 0V, VGE = ± 20V  
25 μA  
mA  
±100 nA  
1
IGES  
AC Switches  
VCE(sat)  
IC = 14A, VGE = 15V, Note 1  
TJ = 125°C  
2.2  
2.7  
2.7  
V
V
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100602(03/14)  
IXBF14N300  
ISOPLUS i4-PakTM (HV) Outline  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
A
E
U
S
gfS  
IC = 14A, VCE = 10V, Note 1  
8
13  
S
Q
A2  
Cies  
Coes  
Cres  
1275  
50  
pF  
pF  
pF  
T
VCE = 25V, VGE = 0V, f = 1MHz  
D
R
4
18  
L1  
1
2
3
Qg  
62  
7
nC  
nC  
nC  
Qge  
Qgc  
IC = 14A, VGE = 15V, VCE = 1500V  
L
c
30  
e
b1  
A1  
b
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
40  
380  
ns  
ns  
ns  
ns  
e1  
Resistive Switching Times, TJ = 25°C  
Pin 1 = Gate  
IC = 14A, VGE = 15V  
Pin2 = Emitter  
Pin 3 = Collector  
Tab 4 = Isolated  
166  
VCE = 960V, RG = 20  
1900  
64  
746  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 14A, VGE = 15V  
180  
VCE = 960V, RG = 20  
1730  
RthJC  
RthCS  
1.04 °C/W  
°C/W  
0.15  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max  
VF  
IF = 14A, VGE = 0V, Note 1  
2.7  
V
trr  
1.4  
23  
16  
μs  
A
IF = 7A, VGE = 0V, -diF/dt = 100A/μs  
IRM  
QRM  
VR = 100V, VGE = 0V  
μC  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Device must be heatsunk for high-temperature leakage current  
measurements to avoid thermal runaway.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBF14N300  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
250  
200  
150  
100  
50  
28  
24  
20  
16  
12  
8
V
= 25V  
V
= 25V  
GE  
GE  
23V  
21V  
17V  
15V  
13V  
11V  
19V  
9V  
7V  
17V  
15V  
13V  
11V  
9V  
7V  
4
5V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
28  
24  
20  
16  
12  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 25V  
GE  
V
= 15V  
GE  
19V  
15V  
13V  
11V  
9V  
I
= 28A  
C
7V  
I
= 14A  
C
I
= 7A  
C
4
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
45  
40  
35  
30  
25  
20  
15  
10  
5
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
T
J
= 25ºC  
I C = 28A  
14A  
T
J
= 125ºC  
25ºC  
- 40ºC  
7.0  
7A  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.5  
8.0  
8.5  
9.0  
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXBF14N300  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
20  
18  
16  
14  
12  
10  
8
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= 25ºC  
125ºC  
T
J
= - 40ºC  
25ºC  
125ºC  
V
= 0V  
GE  
6
V
= 15V  
GE  
4
2
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
VF - Volts  
IC - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10,000  
1,000  
100  
16  
14  
12  
10  
8
f = 1 MHz  
V
= 1500V  
CE  
I
I
= 14A  
C
G
= 10mA  
C
ies  
6
C
oes  
res  
4
2
C
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
VCE - Volts  
QG - NanoCoulombs  
Fig. 11. Reverse-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
aaa  
140  
120  
100  
80  
2
1
D = 0.5  
D = 0.2  
D = 0.1  
D = tp / T  
0.1  
60  
t
p
D = 0.05  
40  
T
D = 0.02  
D = 0.01  
T
= 125ºC  
J
R
= 20Ω  
G
20  
dv / dt < 10V / ns  
Single Pulse  
0
0.01  
500  
1000  
1500  
2000  
2500  
3000  
0.000001 0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBF14N300  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
@ TC = 75ºC  
1000  
100  
10  
1000  
100  
10  
V
Limit  
V
Limit  
CE(sat)  
CE(sat)  
25µs  
25µs  
1
1
100µs  
100µs  
1ms  
1ms  
0.1  
0.01  
0.1  
0.01  
T = 150ºC  
T = 150ºC  
J
J
10ms  
T
C
= 25ºC  
T = 75ºC  
C
10ms  
Single Pulse  
Single Pulse  
100ms  
100ms  
DC  
1,000  
DC  
1
10  
100  
10,000  
1
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_14N300(4P) 03-11-14  
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