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IXBL64N250

型号：

IXBL64N250

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

154 K

下载PDF手册
High Voltage, High Gain  
BiMOSFETTM  
VCES = 2500V  
IC110 = 46A  
IXBL64N250  
VCE(sat) 3.0V  
Monolithic Bipolar  
MOS Transistor  
(Electrically Isolated Tab)  
ISOPLUS i5-PakTM  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1M  
Continuous  
Maximum Ratings  
2500  
2500  
±25  
V
V
V
V
A
VCGR  
VGES  
G
E
Isolated Tab  
C
VGEM  
IC25  
IC110  
ICM  
Transient  
±35  
TC = 25°C  
116  
G = Gate  
C = Collector  
E = Emitter  
TC = 110°C  
TC = 25°C, 1ms  
46  
750  
A
A
SSOA  
VGE= 15V, TVJ = 125°C, RG = 1  
ICM = 160  
A
(RBSOA)  
Clamped Inductive Load  
VCE < 0.8 • VCES  
Features  
TSC  
(SCSOA)  
VGE = 15V, TJ = 125°C  
RG = 5, VCE = 1250V, Non-Repetitive  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
10  
μs  
PC  
TC = 25°C  
500  
W
Isolated Mounting Surface  
2500VElectrical Isolation  
High Blocking Voltage  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Low Switching Losses  
High Current Handling Capability  
Anti-Parallel Diode  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
VISOL  
FC  
50/60Hz, 1 minute  
2500  
30..170 / 7..36  
8
V~  
Nm/lb-in.  
g
Advantages  
Mounting Force with Clip  
High Power Density  
Low Gate Drive Requirement  
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterrupted Power Supplies (UPS)  
Capacitor Discharge Circuits  
Laser Generators  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
2500  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 1mA, VGE = 0V  
IC = 4mA, VCE = VGE  
V
V
5.0  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
50 μA  
Note 2, TJ = 125C  
6 mA  
IGES  
VCE = 0V, VGE = ± 25V  
±200 nA  
VCE(sat)  
IC = 64A, VGE = 15V, Note 1  
2.5  
3.1  
3.0  
V
V
TJ = 125C  
DS100259A(5/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXBL64N250  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
ISOPLUS i5-PakTM HV (IXBL) Outline  
Min.  
Typ.  
Max.  
E
S
gfS  
IC = 64A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
40  
72  
S
Cies  
Coes  
Cres  
8900  
345  
pF  
pF  
pF  
4
+
1
2
3
118  
Qg  
400  
46  
nC  
nC  
nC  
Qge  
Qgc  
IC = 64A, VGE = 15V, VCE = 600V  
c
b1  
e1  
b3  
b2  
155  
e
Pin 1 = Gate  
Pin 2 = Emitter  
Pin 3 = Collector  
Tab 4 = Electrically Isolated  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
49  
318  
232  
170  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
SYM  
INCHES  
MIN  
MILLIMETER  
IC = 128A, VGE = 15V  
MAX  
MIN  
MAX  
A
0.190  
0.205  
0.118  
0.055  
0.055  
0.072  
0.068  
0.029  
1.040  
0.799  
4.83  
2.59  
5.21  
3.00  
1.40  
1.40  
1.83  
1.73  
0.74  
26.42  
20.29  
VCE = 1250V, RG = 1  
A1  
A2  
b
0.102  
0.046  
1.17  
54  
578  
222  
175  
ns  
ns  
ns  
ns  
0.045  
1.14  
Resistive Switching Times, TJ = 125°C  
IC = 128A, VGE = 15V  
b1  
b2  
c
0.063  
1.60  
0.058  
1.47  
0.020  
0.51  
VCE = 1250V, RG = 1  
D
1.020  
25.91  
19.56  
3.81 BSC  
E
0.770  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
e
0.150 BSC  
e1  
L
0.450 BSC  
0.780  
11.43 BSC  
19.81  
0.15  
0.820  
0.102  
0.235  
0.513  
0.180  
0.130  
0.690  
0.821  
20.83  
2.59  
L1  
Q
0.080  
0.210  
0.490  
0.150  
0.100  
0.668  
0.801  
2.03  
5.33  
5.97  
Q1  
R
12.45  
3.81  
13.03  
4.57  
R1  
S
2.54  
3.30  
16.97  
20.34  
17.53  
20.85  
Reverse Diode  
T
U
0.065  
0.080  
1.65  
2.03  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max  
VF  
trr  
IF = 64A, VGE = 0V, Note 1  
3.0  
V
160  
480  
ns  
IF = 64A, VGE = 0V, -diF/dt = 650A/μs  
VR = 600V, VGE = 0V  
IRM  
A
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Part must be heatsunk for high-temp Ices measurement.  
Additional provisions for lead-to-lead isolation are required at VCE >1200V.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1  
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1  
4,835,592 4,931,844 5,049,961 5,237,481 6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBL64N250  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Output Characteristics @ TJ = 125oC  
270  
240  
210  
180  
150  
120  
90  
V
= 25V  
V
= 25V  
GE  
GE  
300  
250  
200  
150  
100  
50  
20V  
15V  
20V  
15V  
10V  
10V  
60  
30  
5V  
5V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
VCE - Volts  
VCE - Volts  
Fig. 4. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 3. Dependence of VCE(sat) on  
Junction Temperature  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
V
= 15V  
GE  
T
J
= 25oC  
I
= 256A  
C
I C = 256A  
128A  
64A  
I
= 128A  
C
I
= 64A  
C
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VGE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Breakdown & Threshold Voltages  
vs. Junction Temperature  
Fig. 6. Input Admittance  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
120  
100  
80  
60  
40  
20  
0
BV  
CES  
T
J
= 125oC  
25oC  
- 40oC  
V
GE(  
th  
)
-55  
-35  
-15  
5
25  
45  
65  
85  
105  
125  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
VGE - Volts  
TJ - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXBL64N250  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
200  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40oC  
25oC  
T
J
= 25oC  
125oC  
T
J
= 125oC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
40  
10  
VF - Volts  
IC - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
16  
14  
12  
10  
8
100,000  
10,000  
1,000  
100  
f = 1 MHz  
V
= 600V  
CE  
I
I
= 64A  
C
G
C
C
ies  
= 10mA  
oes  
6
4
C
res  
2
0
10  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
0
5
10  
15  
20  
25  
30  
35  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
1
0.1  
180  
160  
140  
120  
100  
80  
0.01  
60  
0.001  
0.0001  
T
J
= 125oC  
40  
R
= 1Ω  
G
20  
dv / dt < 10V / ns  
0
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
250  
500  
750  
1000  
1250  
1500  
1750  
2000  
2250  
2500  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Pulse Width - Seconds  
IXBL64N250  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
650  
600  
550  
500  
450  
400  
350  
300  
250  
R
= 1Ω , V  
= 15V  
G
GE  
V
= 1250V  
CE  
T = 125oC  
J
I
= 256A, 128A, 64A  
C
R
= 1Ω  
  
V
= 15V  
G
GE  
V
= 1250V  
CE  
T = 25oC  
J
60  
80  
100  
120  
140  
160  
180  
200  
220  
240  
260  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
260  
250  
240  
230  
220  
210  
200  
190  
180  
170  
160  
300  
285  
270  
255  
240  
225  
210  
195  
180  
165  
150  
800  
750  
700  
650  
600  
550  
500  
450  
80  
75  
70  
65  
60  
55  
50  
45  
I
= 64A  
C
t r  
td(on)  
= 15V  
T = 125oC, V  
J
GE  
t f  
td(off)  
V
= 1250V  
CE  
R
= 1Ω,  
V
= 15V  
G
GE  
I
= 256A  
C
V
= 1250V  
CE  
I
= 128A  
C
I
= 128A, 256A  
C
I
= 64A  
C
1
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
400  
350  
300  
250  
200  
150  
100  
50  
700  
350  
320  
290  
260  
230  
200  
170  
140  
290  
270  
250  
230  
210  
190  
170  
150  
t f  
R
td(off)  
= 1Ω, V = 15V  
600  
500  
400  
300  
200  
100  
0
I
= 64A, 128A, 256A  
C
G
GE  
= 1250V  
V
CE  
T = 125oC, 25oC  
J
t f  
td(off  
)
T = 125oC, V  
= 15V  
J
GE  
V
= 1250V  
7
CE  
60  
80  
100  
120  
140  
160  
180  
200  
220  
240  
260  
1
2
3
4
5
6
8
9
10  
RG - Ohms  
IC - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_64N250(9P) 4-05-10-A  
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