IXBH 16N170
IXBT 16N170
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; VCE = 10 V,
11
14
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
1700
83
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
31
Qg
69
13
24
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim. Millimeter
Inches
td(on)
tri
td(off)
tfi
35
25
ns
ns
Inductive load, TJ = 25°C
Min. Max. Min. Max.
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 33 W
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
600 1000 ns
1110 1600 ns
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
12
16 mJ
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
td(on)
tri
35
28
ns
ns
mJ
ns
G
H
1.65 2.13 0.065 0.084
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
-
4.5
-
0.177
J
K
1.0
1.4 0.040 0.055
Eon
td(off)
tfi
2.0
10.8 11.0 0.426 0.433
VCE = 0.8 VCES, RG = Roff = 33 W
660
1600
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
ns
,
N
1.5 2.49 0.087 0.102
Eoff
15
mJ
TO-268AA (D3 PAK)
RthJC
RthCK
0.83 K/W
K/W
(TO-247)
0.25
ReverseDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = IC90, VGE = 0 V, Pulse test,
< 300 us, duty cycle d < 2%
3.3
V
t
IRM
trr
IF = 25 A, VGE = 0 V, -diF/dt = 50 A/us
vR = 100A
24
360
A
ns
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Min. Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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