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IXBH10N300HV

型号：

IXBH10N300HV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

268 K

下载PDF手册
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 3000V  
IC110 = 10A  
VCE(sat) 2.8V  
IXBA10N300HV  
IXBH10N300HV  
TO-263HV (IXBA)  
G
E
Symbol  
Test Conditions  
Maximum Ratings  
C (Tab)  
VCES  
VCGR  
TC = 25°C to 150°C  
3000  
3000  
V
V
TO-247HV (IXBH)  
TJ = 25°C to 150°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
34  
10  
88  
A
A
A
G
E
C (Tab)  
C
SSOA  
(RBSOA)  
V
GE = 15V, TVJ = 125°C, RG = 10  
ICM = 80  
1500  
A
V
Clamped Inductive Load  
TSC  
(SCSOA)  
VGE = 15V, TJ = 125°C,  
RG = 82, VCE =1500V, Non-Repetitive  
G = Gate  
E = Emitter  
C
= Collector  
10  
μs  
Tab = Collector  
PC  
TC = 25°C  
180  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
High Blocking Voltage  
Anti-Parallel Diode  
FC  
Mounting Force (TO-263HV)  
Mounting Torque (TO-247HV)  
10..65 / 22..14.6  
1.13/10  
N/lb  
Low Conduction Losses  
Md  
Nm/lb.in  
Advantages  
Weight  
TO-263HV  
TO-247HV  
2.5  
6.0  
g
g
Low Gate Drive Requirement  
High Power Density  
Applications  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Switch-Mode and Resonant-Mode  
Power Supplies  
Min.  
3000  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
V
V
Uninterruptible Power Supplies (UPS)  
Laser Generators  
5.0  
Capacitor Discharge Circuits  
AC Switches  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
25 μA  
500 μA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 10A, VGE = 15V, Note 1  
2.2  
2.7  
2.8  
V
V
© 2015 IXYS CORPORATION, All Rights Reserved  
DS100608B(9/15)  
IXBA10N300HV  
IXBH10N300HV  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-263HV-2L Outline  
A
E
L1  
Min.  
Typ.  
Max.  
c2  
D1  
E1  
gfS  
IC = 10A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
6
11  
S
D
H
3
1
A1  
2
Cies  
Coes  
Cres  
1044  
42  
pF  
pF  
pF  
L4  
L
L3  
c
b
b2  
e2  
e1  
14  
PIN: 1 - Gate  
2 - Emitter  
3 - Collector  
Qg  
46  
5
nC  
nC  
nC  
Qge  
Qgc  
IC = 10A, VGE = 15V, VCE = 1000V  
A2  
20  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
36  
340  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
IC = 10A, VGE = 15V  
100  
VCE = 960V, RG = 10  
1850  
40  
765  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 10A, VGE = 15V  
120  
VCE = 960V, RG = 10  
2010  
RthJC  
RthCS  
0.69 °C/W  
°C/W  
TO-247HV  
0.21  
TO-247HV Outline  
E
A
E1  
R
0P  
A2  
0P1  
Q
S
Reverse Diode  
D1  
D2  
D
4
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
1
2
3
L1  
L
A3  
2X  
Min.  
Typ.  
Max.  
D3  
E2  
E3  
4X  
A1  
VF  
IF = 10A, VGE = 0V  
2.7  
V
trr  
IRM  
QRM  
1.6  
23  
18.6  
μs  
A
μC  
IF = 5A, VGE = 0V, -diF/dt = 100A/μs  
e
b
b1  
c
e1  
3X  
3X  
PINS:  
VR = 100V, VGE = 0V  
1 - Gate 2 - Emitter  
3, 4 - Collector  
Note  
1: Pulse test, t 300μs, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1  
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1  
4,835,592 4,931,844 5,049,961 5,237,481 6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBA10N300HV  
IXBH10N300HV  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
20  
18  
16  
14  
12  
10  
8
140  
120  
100  
80  
V
= 15V  
GE  
13V  
11V  
10V  
9V  
V
= 15V  
14V  
GE  
8V  
7V  
13V  
12V  
11V  
10V  
9V  
60  
6V  
5V  
6
40  
4
8V  
7V  
6V  
20  
2
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
20  
18  
16  
14  
12  
10  
8
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
10V  
9V  
I
= 20A  
C
8V  
7V  
I
= 10A  
C
6V  
5V  
6
4
I
= 5A  
75  
C
2
0
-50  
-25  
0
25  
50  
100  
125  
150  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
32  
28  
24  
20  
16  
12  
8
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
T
J
= 25ºC  
I
= 20A  
10A  
C
T
J
= 125ºC  
25ºC  
- 40ºC  
6.5  
4
5A  
9
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
7.0  
7.5  
8.0  
8.5  
5
6
7
8
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXBA10N300HV  
IXBH10N300HV  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
18  
16  
14  
12  
10  
8
60  
50  
40  
30  
20  
10  
0
T
J
= 25ºC  
125ºC  
T
J
= - 40ºC  
25ºC  
125ºC  
V
= 0V  
GE  
6
V
= 15V  
GE  
4
2
0
0
5
10  
15  
20  
25  
30  
35  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
IC - Amperes  
VF - Volts  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10,000  
1,000  
100  
16  
14  
12  
10  
8
f = 1 MHz  
V
= 1kV  
CE  
I
I
= 10A  
C
G
= 10mA  
C
ies  
6
C
oes  
4
2
C
res  
15  
0
10  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
5
10  
20  
25  
30  
35  
40  
VCE - Volts  
QG - NanoCoulombs  
Fig. 11. Reverse-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1
0.1  
T
= 125ºC  
J
R
= 10Ω  
G
dv / dt < 10V / ns  
0.01  
500  
1000  
1500  
2000  
2500  
3000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
Fig. 14. Resistive Turn-on Rise Time vs.  
Collector Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
800  
700  
600  
500  
400  
300  
200  
1200  
1000  
800  
600  
400  
200  
0
R
= 10Ω , V = 15V  
R = 10Ω , V = 15V  
G GE  
G
GE  
V
= 960V  
V
= 960V  
CE  
CE  
I
= 10A  
C
T
J
= 125ºC  
I
= 20A  
C
T
J
= 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
2600  
2400  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
150  
140  
130  
120  
110  
100  
90  
1100  
1000  
900  
800  
700  
600  
500  
90  
t f  
t
d(off) - - - -  
tr  
t
d(on) - - - -  
R
G
= 10Ω, V = 15V  
GE  
80  
70  
60  
50  
40  
30  
T
J
= 125ºC, V = 15V  
GE  
V
= 960V  
CE  
V
= 960V  
CE  
IC = 20A  
I
I
= 20A  
= 10A  
C
C
IC = 10A  
80  
70  
60  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times vs.  
Collector Current  
Fig. 28. Resistive Turn-off Switching Times vs.  
Gate Resistance  
3600  
3200  
2800  
2400  
2000  
1600  
1200  
800  
190  
170  
150  
130  
110  
90  
2800  
2400  
2000  
1600  
1200  
800  
600  
500  
400  
300  
200  
100  
0
t f  
t
d(off) - - - -  
tf  
td(off  
) - - - -  
R
G
= 10Ω, V = 15V  
GE  
T = 125ºC, V = 15V  
J
GE  
V
= 960V  
CE  
V
= 960V  
CE  
T = 125ºC  
J
I
= 10A  
C
T = 25ºC  
J
I
= 20A  
C
70  
50  
400  
5
7
9
11  
13  
15  
17  
19  
21  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXBA10N300HV  
IXBH10N300HV  
Fig. 19. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 20. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
100  
10  
100  
10  
V
Limit  
V
Limit  
CE(sat)  
CE(sat)  
25µs  
1
1
25µs  
100µs  
100µs  
1ms  
1ms  
0.1  
0.01  
0.1  
0.01  
T
= 150ºC  
= 75ºC  
T
= 150ºC  
= 25ºC  
J
J
10ms  
T
C
T
C
10ms  
DC  
Single Pulse  
Single Pulse  
100ms  
DC  
1,000  
100ms  
1
10  
100  
10,000  
1
10  
100  
1,000  
10,000  
VCE - Volts  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: B_10N300(3T-B8-27) 9-16-14-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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