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IXBF42N300

型号：

IXBF42N300

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

204 K

下载PDF手册
Preliminary Technical Information  
High Voltage, BiMOSFETTM  
Monolithic Bipolar MOS  
Transistor  
VCES = 3000V  
IC110 = 24A  
VCE(sat) ≤ 3.0V  
IXBF42N300  
(Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
3000  
3000  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 25  
± 35  
V
V
1
2
Isolated Tab  
5
IC25  
IC110  
ICM  
TC = 25°C  
60  
24  
A
A
A
1 = Gate  
2 = Emitter  
5 = Collector  
TC = 110°C  
TC = 25°C, 1ms  
380  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 20Ω  
ICM = 84  
VCE ≤ 0.8 • VCES  
A
μs  
W
Clamped Inductive Load  
TSC  
(SCSOA)  
VGE = 15V, TJ = 125°C,  
RG = 82Ω, VCE =1500V, Non-Repetitive  
10  
Features  
z
PC  
TC = 25°C  
240  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
Isolated Mounting Surface  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z
z
TJM  
Tstg  
3000V~ Electrical Isolation  
z
z
-55 ... +150  
High Blocking Voltage  
High Peak Current Capability  
Low Saturation Voltage  
FBSOA Rated  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
z
z
FC  
Mounting Force  
20..120 / 4.5..27  
Nm/lb.in.  
SCSOA Rated  
VISOL  
Weight  
50/60Hz, 1 Minute  
3000  
5
V~  
g
Advantages  
z
Low Gate Drive Requirement  
High Power Density  
z
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
3000  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
V
V
Applications  
IC = 1mA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
5.0  
z
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
Protection Circuits  
50 μA  
μA  
z
Note 2, TJ = 125°C  
250  
z
z
IGES  
VCE = 0V, VGE = ± 25V  
±200 nA  
VCE(sat)  
IC = 42A, VGE = 15V, Note 1  
2.5  
3.1  
3.0  
V
V
TJ = 125°C  
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100325A(06/11)  
IXBF42N300  
ISOPLUS i4-PakTM (HV) Outline  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
gfS  
IC = 42A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
Gate Input Resistance  
28  
45  
S
Cies  
Coes  
Cres  
4780  
170  
56  
pF  
pF  
pF  
RGi  
3.0  
Ω
Qg  
200  
28  
nC  
nC  
nC  
Qge  
Qgc  
IC = 42A, VGE = 15V, VCE = 1000V  
75  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
72  
330  
445  
610  
ns  
ns  
ns  
ns  
Pin 1 = Gate  
Resistive Switching Times, TJ = 25°C  
Pin2 = Emitter  
Pin 3 = Collector  
Tab 4 = Isolated  
IC = 42, VGE = 15V  
VCE = 1500V, RG = 20Ω  
72  
580  
460  
490  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 42, VGE = 15V  
VCE = 1500V, RG = 20Ω  
RthJC  
RthCS  
0.52 °C/W  
°C/W  
0.15  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max  
VF  
trr  
IF = 42A, VGE = 0V, Note 1  
IF = 21A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
2.5  
V
μs  
A
1.7  
43  
IRM  
Notes:  
1. Pulse test, t < 300μs, duty cycle, d < 2%.  
2. Device must be heatsunk for high-temperature leakage current  
measurements to avoid thermal runaway.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBF42N300  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
320  
280  
240  
200  
160  
120  
80  
VGE = 25V  
VGE = 25V  
20V  
15V  
20V  
15V  
10V  
10V  
40  
5V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
-50  
4
1
2
3
4
5
6
7
8
9
10  
150  
9.5  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 25V  
20V  
VGE = 15V  
15V  
I C = 84A  
10V  
I C = 42A  
I C = 21A  
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
125ºC  
I C = 84A  
42A  
60  
40  
21A  
20  
0
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXBF42N300  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 25ºC  
25ºC  
TJ = 125ºC  
125ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
0.5  
1
1.5  
VF - Volts  
2
2.5  
3
3.5  
40  
10  
IC - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
16  
14  
12  
10  
8
10,000  
1,000  
100  
VCE = 1000V  
I
I
C = 42A  
C
ies  
G = 10mA  
C
oes  
6
4
C
res  
2
= 1 MHz  
5
f
10  
0
0
10  
15  
20  
25  
30  
35  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
1
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0.1  
0.01  
TJ = 125ºC  
G = 20Ω  
dV / dt < 10V / ns  
R
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
250  
500  
750 1000 1250 1500 1750 2000 2250 2500 2750 3000  
VCE - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBF42N300  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Collector Current  
650  
600  
550  
500  
450  
400  
350  
300  
250  
650  
600  
550  
500  
450  
400  
350  
300  
250  
RG = 20Ω , VGE = 15V  
CE = 1500V  
V
TJ = 125ºC  
RG = 20Ω , VGE = 15V  
CE = 1500V  
V
I C = 84A  
I C = 42A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
40  
45  
50  
55  
60  
65  
70  
75  
80  
85  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
1800  
1600  
1400  
1200  
1000  
800  
360  
320  
280  
240  
200  
160  
120  
80  
800  
700  
600  
500  
400  
300  
200  
500  
480  
460  
440  
420  
400  
380  
tf  
td(off) - - - -  
tr  
td(on) - - - -  
RG = 20Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 1500V  
VCE = 1500V  
I C = 84A  
I C = 42A  
I C = 42A  
600  
I C = 84A  
400  
200  
40  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
20  
40  
60  
80  
100  
120  
140  
160  
180  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Collector Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
3600  
800  
700  
600  
500  
400  
300  
200  
500  
480  
460  
440  
420  
400  
380  
tf  
TJ = 125ºC, VGE = 15V  
CE = 1500V  
td(off  
) - - - -  
tf  
td(off) - - - -  
3200  
2800  
2400  
2000  
1600  
1200  
800  
RG = 20Ω, VGE = 15V  
V
VCE = 1500V  
I C = 42A  
TJ = 25ºC  
TJ = 125ºC  
I C = 84A  
400  
0
40  
45  
50  
55  
60  
65  
70  
75  
80  
85  
20  
40  
60  
80  
100  
120  
140  
160  
180  
RG - Ohms  
IC - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXBF42N300  
Fig. 19. Forward-Bias Safe Operating Area @ TC = 25ºC  
Fig. 20. Forward-Bias Safe Operating Area @ TC = 115ºC  
1000  
100  
10  
1000  
100  
10  
V
Limit  
V
Limit  
CE(sat)  
CE(sat)  
25µs  
100µs  
25µs  
1ms  
100µs  
1
1
1ms  
10ms  
0.1  
0.1  
100ms  
DC  
10ms  
T
T
= 150ºC  
= 25ºC  
T
T
= 150ºC  
= 115ºC  
J
J
0.01  
0.001  
0.01  
0.001  
100ms  
DC  
C
C
Single Pulse  
Single Pulse  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
VCE - Volts  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: B_42N300(8M)04-14-11  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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