WTM772
WTM882
PNP/NPN Epitaxial Planar Transistors
SOT-89
1
2
1. BASE
2. COLLECTOR
3
3. EMITTER
WTM772
WTM882
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
PNP/WTM772
Unit
Vdc
Vdc
Vdc
Adc
NPN/WTM882
V
30
-30
-40
CEO
V
40
6.0
3.0
CBO
V
-5.0
-3.0
EBO
Collector Current (DC)
I
C(DC)
W
°C/W
C
P
Total Device Dissipation T =25 C
0.5
A
D
R
Thermal Resistance, Junction to Ambient
Junction Temperature
250
150
θJA
T
j
Storage,Temperature
Tstg
-55 to +150
C
Device Marking
WTM772=B772 , WTM882=D882
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
-
Collector-Emitter Breakdown Voltage (I = -10/10 mAdc, I =0)
V
-30/30
Vdc
C
B
(BR)CEO
-
-
-40/40
Vdc
Collector-Base Breakdown Voltage (I = -100/100 uAdc, I =0)
V
V
C
E
(BR)CBO
Vdc
-5.0/6.0
Emitter-Base Breakdown Voltage (I = -100/100 uAdc, I =0)
(BR)EBO
E
C
uAdc
I
I
CE0
-10/10
-1.0/1.0
-1.0/1.0
Collector Cutoff Current (V = -30/30 Vdc, I =0)
-
-
CE
B
uAdc
uAdc
Collector Cutoff Current (V = -40/40 Vdc, I =0)
CB
CBO
EBO
E
-
I
d
Emitter Cutoff Current (V = -6.0/6.0V c, I =0)
EB
C
WEITRON
http://www.weitron.com.tw
14-Aug-2012
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