WTM1766
NPN EPITAXIAL PLANAR TRANSISTOR
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Units
Value
40
V
V
V
32
5.0
2.0
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
A
mW
℃
PC
500
150
TJ
Storage Temperature
Tstg
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
40
32
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC=0
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
ICBO
IEBO
VCB=20V, IE=0
VEB=4V, IC=0
1
1
μA
μA
DC current gain
hFE(1)
VCE(sat)
fT
VCE=3V, IC=500mA
82
390
0.8
Collector-emitter saturation voltage
Transition frequency
IC=2A, IB=0.2A
V
VCE=5V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
100
30
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
P
Q
R
82-180
120-270
DBQ
180-390
Range
Marking
DBP
DBR
WEITRON
http://www.weitron.com.tw
1/3
04-Dec-08
