找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

WTM2907A

型号:

WTM2907A

描述:

PNP外延平面晶体管[ PNP Epitaxial Planar Transistors ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

4 页

PDF大小:

469 K

WTM2907A  
PNP Epitaxial Planar Transistors  
SOT-89  
P b  
Lead(Pb)-Free  
1
2
1. BASE  
2. COLLECTOR  
3
Features:  
3. EMITTER  
* Low Collector Saturation Voltage  
* High Spwwd Switching  
* For Complementary Use With NPN Type WTM2222A  
ABSOLUTE MAXIMUM RATINGS (T =25˚C)  
A
Rating  
Symbol  
Limits  
Unit  
V
V
Collector-Base Voltage  
CBO  
-60  
V
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CEO  
-60  
-5  
V
EBO  
I
A
-0.6  
1.2  
C
Collector Power Dissipation  
Junction Temperature  
W
P
D
T
j
+150  
˚C  
˚C  
T
-55 to +150  
Storage Temperature Range  
stg  
Device Marking  
WTM2907A = 2907A , p2F  
ELECTRICAL CHARACTERISTICS(T =25˚Cunless otherwise noted)  
A
Min  
Typ  
Parameter  
Symbol  
Max  
Unit  
Collector-Base Breakdown Voltage  
BV  
BV  
BV  
-60  
-
-
V
V
CBO  
CEO  
EBO  
CBO  
CEX  
I =-10µA, I =0  
C
E
Collector-Emitter Breakdown Voltage  
I =-10mA, I =0  
-60  
-5  
-
-
-
-
-
-
-
C
B
Emitter-Base Breakdown Voltage  
I =-10µA, I =0  
V
E
C
Collector Cutoff Current  
=-50V, I =0  
I
I
-10  
-50  
nA  
nA  
V
CE  
E
Collector Cutoff Current  
-
V
CE  
=-30V, V =-0.5V  
BE  
WEITRON  
http://www.weitron.com.tw  
1/4  
24-Mar-06  
WTM2907A  
ELECTRICAL CHARACTERISTICS (T =25˚C Unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS(1)  
DC Current Gain  
h
V
CE  
V
CE  
V
CE  
V
CE  
V
CE  
=-10V, I =-0.1mA  
75  
100  
100  
100  
50  
-
-
-
-
-
-
-
FE1  
C
h
FE2  
=-10V, I =-1.0mA  
C
h
FE3  
=-10V, I =-10mA  
-
300  
-
C
-
h
FE4  
=-10V, I =-150mA  
C
h
FE5  
=-10V, I =-500mA  
C
Collector-Emitter Saturation Voltage  
I =-150mA, I =-15mA  
V
-
-
-0.2  
-0.5  
-0.4  
-1.6  
V
V
CE(sat)1  
C
B
V
CE(sat)2  
I =-500mA, I =-50mA  
C
B
Base-Emitter Saturation Voltage  
I =-150mA, I =-15mA  
V
-
-
-
-
-1.3  
-2.6  
V
BE(sat)1  
C
B
V
mV  
BE(sat)2  
I =-500mA, I =-50mA  
C
B
1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2%  
DYNAMIC CHARACTERISTICS  
Transition Frequency  
f
MHz  
pF  
200  
-
-
-
-
T
V
CE  
=-20V, I =-50mA, f=100MHz  
C
Output Capacitance  
=-10V, f=1MHz  
C
8.0  
ob  
V
CE  
WEITRON  
http://www.weitron.com.tw  
2/4  
24-Mar-05  
WTM2907A  
ELECTRICAL CHARACTERISTIC CURVES  
10000  
1000  
1000  
lC=10IB  
T =75˚C  
a
125˚C  
25˚C  
100  
T
= 75˚C  
a
100  
10  
25˚C  
125˚C  
VCE = 10V  
0
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
1000  
Collector current IC (mA)  
Collector current IC (mA)  
Fig.2 Satueation Voltage & Collector Current  
Fig.1 Current Gain & Collector Current  
1000  
10000  
VCE=20V  
lC=10IB  
75˚C  
100  
10  
1000  
25˚C  
TC=125˚C  
100  
0.1  
1
10  
100  
1
10  
100  
1000  
Collector current IC (mA)  
Collector current IC (mA)  
Fig.4 Gain Bandwidth Product  
& Collector Current  
Fig.3 Satueation Voltage & Collector Current  
100  
10000  
PT=1ms  
PT=100ms  
1000  
PT=1s  
10  
100  
10  
1
Cob  
1
1
10  
100  
0.1  
1
10  
100  
Collector to emitter voltage VCE (V)  
Collector to base voltage VCB (V)  
Fig.5 Capacitance & Collector to Base Voltage  
Fig.6 Safe Operating Area  
WEITRON  
3/4  
24-Mar-06  
http://www.weitron.com.tw  
WTM2907A  
SOT-89 Outline Dimensions  
unit:mm  
SOT-89  
Dim  
A
B
C
D
Min  
Max  
E
1.400  
0.320  
0.360  
0.350  
4.400  
1.400  
2.300  
3.940  
1.600  
0.520  
0.560  
0.440  
4.600  
1.800  
2.600  
4.250  
A
G
H
J
C
E
G
H
J
D
B
K
K
L
1.500TYP  
L
2.900  
3.100  
WEITRON  
http://www.weitron.com.tw  
4/4  
24-Mar-06  
厂商 型号 描述 页数 下载

WEITRON

WTM1624 NPN外延平面晶体管[ NPN EPITAXIAL PLANAR TRANSISTOR ] 4 页

WEITRON

WTM1766 NPN外延平面晶体管[ NPN EPITAXIAL PLANAR TRANSISTOR ] 3 页

WEITRON

WTM1797 PNP外延平面晶体管[ PNP EPITAXIAL PLANAR TRANSISTOR ] 3 页

WEITRON

WTM2222A NPN外延平面晶体管[ NPN Epitaxial Planar Transistors ] 4 页

WEITRON

WTM2310A N沟道增强型功率MOSFET[ N-Channel Enhancement Mode Power MOSFET ] 5 页

WEITRON

WTM3904 NPN外延平面晶体管[ NPN EPITAXIAL PLANAR TRANSISTOR ] 4 页

WEITRON

WTM3906 PNP外延平面晶体管[ PNP EPITAXIAL PLANAR TRANSISTOR ] 4 页

TDK

WTM505090-10K2-5V-G1 [ Wireless charging ] 4 页

WEITRON

WTM5551 NPN外延平面晶体管[ NPN EPITAXIAL PLANAR TRANSISTOR ] 4 页

WEITRON

WTM649A PNP外延PL ANAR晶体管[ PNP Epitaxial Pl anar Transistors ] 4 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.164583s