High Voltage BIMOSFETTM
Monolithic Bipolar
IXBH 40N140 VCES = 1400/1600V
IXBH 40N160 IC25 = 33 A
MOS Transistor
VCE(sat) = 6.2 V typ.
N-Channel, Enhancement Mode
tfi
= 40 ns
C
E
TO-247 AD
G
G
C
C (TAB)
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Conditions
Maximum Ratings
Features
40N140
40N160
• Internationalstandardpackage
JEDEC TO-247 AD
VCES
VCGR
TJ = 25°C to 150°C
1400
1400
1600
1600
V
V
• HighVoltageBIMOSFETTM
TJ = 25°C to 150°C; RGE = 1 MW
- replaceshighvoltageDarlingtons
and series connected MOSFETs
- lower effective RDS(on)
• Monolithicconstruction
- highblockingvoltagecapability
- very fast turn-off characteristics
• MOS Gate turn-on
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC90
ICM
TC = 25°C,
33
20
40
A
A
A
TC = 90°C
TC = 25°C, 1 ms
- drive simplicity
• Intrinsicdiode
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 22 W VCE = 0.8•VCES ICM = 40
Clamped inductive load, L = 100 mH
A
Applications
PC
TC = 25°C
350
W
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switched-modeandresonant-mode
powersupplies
TJ
-55 ... +150
150
°C
°C
°C
°C
TJM
Tstg
TL
-55 ... +150
300
1.6 mm (0.063 in) from case for 10 s
Mounting torque
• CRTdeflection
• Lampballasts
Md
1.15/10 Nm/lb.in.
Weight
6
g
Advantages
Symbol
BVCES
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Space savings
min. typ. max.
• High power density
IC = 1 mA, VGE = 0 V
IC = 2 mA, VCE = VGE
40N140
40N160
1400
1600
V
V
VGE(th)
ICES
4
8
V
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
400 mA
mA
3
IGES
VCE = 0 V, VGE = ±20 V
± 500 nA
VCE(sat)
IC = IC90, VGE = 15 V
6.2
7.1
7.8
V
V
TJ = 125°C
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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