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IXBH32N300

型号：

IXBH32N300

描述：

初步技术信息[ Preliminary Technical Information ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

179 K

下载PDF手册
Preliminary Technical Information  
High Voltage, High Gain  
VCES = 3000V  
IC110 = 32A  
VCE(sat) ≤ 3.2V  
IXBH32N300  
IXBT32N300  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
TO-247 (IXBH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
3000  
3000  
V
V
G
C (TAB)  
TJ = 25°C to 150°C, RGE = 1MΩ  
C
E
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
80  
32  
280  
A
A
A
TO-268 (IXBT)  
SSOA  
(RBSOA)  
V
GE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 80  
VCES ≤ 2400  
A
V
Clamped Inductive Load  
G
E
PC  
TC = 25°C  
400  
W
C (TAB)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
C
= Collector  
E = Emitter  
TAB = Collector  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
z
High Blocking Voltage  
z International Standard Packages  
z Low Conduction Losses  
Advantages  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z Low Gate Drive Requirement  
z High Power Density  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
3000  
2.5  
V
V
5.0  
Applications:  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
50 μA  
mA  
TJ = 125°C  
2
z Switched-Mode and Resonant-Mode  
Power Supplies  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 32A, VGE = 15V, Note 1  
2.8  
3.5  
3.2  
V
V
z Uninterruptible Power Supplies (UPS)  
z Laser Generators  
TJ = 125°C  
z Capacitor Discharge Circuits  
z AC Switches  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100118(02/09)  
IXBH32N300  
IXBT32N300  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXBH) Outline  
Min.  
Typ.  
Max.  
gfS  
IC = 32A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
16  
26  
S
Cies  
Coes  
Cres  
3140  
124  
40  
pF  
pF  
pF  
∅ P  
1
2
3
Qg  
142  
20  
nC  
nC  
nC  
Qge  
Qgc  
IC = 32A, VGE = 15V, VCE = 1000V  
57  
e
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
50  
185  
160  
720  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
IC = 32A, VGE = 15V  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
VCE = 1250V, RG = 2Ω  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
58  
515  
165  
630  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 32A, VGE = 15V  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
VCE = 1250V, RG = 2Ω  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
RthJC  
RthCS  
0.31 °C/W  
°C/W  
.780 .800  
.177  
(TO-247)  
0.21  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-268 (IXBT) Outline  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
trr  
IF = 32A, VGE = 0V  
2.1  
V
μs  
A
1.5  
33  
IF = 16A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
IRM  
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXBH32N300  
IXBT32N300  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
VGE = 25V  
20V  
15V  
VGE = 25V  
20V  
15V  
10V  
10V  
5V  
5V  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 25V  
20V  
15V  
VGE = 15V  
I C = 64A  
10V  
I C = 32A  
I C = 16A  
5V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
I C = 64A  
TJ = 125ºC  
25ºC  
- 40ºC  
32A  
16A  
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0  
VGE - Volts  
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_32N300(8P)03-02-09  
IXBH32N300  
IXBT32N300  
Fig. 8. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 7. Transconductance  
45  
40  
35  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 25ºC  
TJ = 125ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
40  
10  
VF - Volts  
IC - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10,000  
1,000  
100  
16  
14  
12  
10  
8
f
= 1 MHz  
VCE = 1kV  
I C = 32A  
I
G = 10mA  
C
ies  
C
oes  
6
4
2
C
res  
0
10  
0
20  
40  
60  
80  
100  
120  
140  
0
5
10  
15  
20  
25  
30  
35  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.000  
0.100  
0.010  
0.001  
TJ = 125ºC  
RG = 10Ω  
dV / dt < 10V / ns  
500  
1000  
1500  
2000  
2500  
3000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBH32N300  
IXBT32N300  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
800  
700  
600  
500  
400  
300  
200  
100  
0
800  
700  
600  
500  
400  
300  
200  
100  
0
RG = 2Ω  
RG = 2Ω  
VGE = 15V  
VGE = 15V  
VCE = 1250V  
VCE = 1250V  
TJ = 125ºC  
I C = 32A  
I C = 64A  
TJ = 25ºC  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
200  
650  
600  
550  
500  
450  
400  
350  
80  
75  
70  
65  
60  
55  
50  
tf  
RG = 2Ω, VGE = 15V  
t
d(off) - - - -  
tr  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
190  
180  
170  
160  
150  
140  
130  
120  
VCE = 1250V  
VCE = 1250V  
I C = 32A  
I C = 32A  
I C = 64A  
I C = 64A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
1400  
1300  
1200  
1100  
1000  
900  
230  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
450  
400  
350  
300  
250  
200  
150  
100  
50  
tf  
td(off  
) - - - -  
TJ = 125ºC, VGE = 15V  
tf  
RG = 2Ω, VGE = 15V  
t
d(off) - - - -  
VCE = 1250V  
VCE = 1250V  
800  
I C = 32A  
700  
600  
I C = 64A  
500  
TJ = 125ºC, 25ºC  
400  
300  
200  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
RG - Ohms  
IC - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_32N300(8P)03-02-09  
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