4N90
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
900
V
ID=250μA,
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ
1.05
V/°C
Referenced to 25°C
VDS=900V, VGS=0V
VDS=720V, TC=125°C
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
10
µA
µA
Drain-Source Leakage Current
Gate- Source Leakage Current
IDSS
100
Forward
Reverse
IGSS
IGSS
+100 nA
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
4.2
V
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
RDS(ON) VGS=10V, ID=2A
3.5
Ω
CISS
740
65
960
85
pF
pF
pF
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
COSS
CRSS
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
5.6
7.3
QG
QGS
QGD
tD(ON)
tR
17
4.5
7.5
25
50
40
35
22
nC
nC
nC
ns
ns
ns
ns
VDS=720V, VGS=10V, ID=4A
Gate-Source Charge
(Note 1,2)
Gate-Drain Charge
Turn-ON Delay Time
60
110
90
Turn-ON Rise Time
VDD=450V, ID=4A, RG=25Ω
(Note 1,2)
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
80
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
4
A
A
ISM
16
1.4
VSD
tRR
IS =4A, VGS=0V
V
VGS=0V, IS=4A,
dIF/dt=100A/μs (Note 1)
450
3.5
ns
μC
QRR
Note : 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R502-479.b
www.unisonic.com.tw
