4N90C
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
900
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous
4.0
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
IDM
16
A
Avalanche Energy
EAS
162
mJ
V/ns
W
Peak Diode Recovery dv/dt
Power Dissipation
dv/dt
PD
2.3
38
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L =67 mH, IAS = 2.2A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
4. ISD ≤ 4.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
3.25
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
900
V
VDS=900V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
10
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=2.0A
2.5
4.5
4.5
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
COSS
CRSS
450
60
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
14
QG
QGS
QGD
tD(ON)
tR
25.6
6.0
8.8
56
nC
nC
nC
ns
ns
ns
ns
VDS=50V, VGS=10V, ID=1.3A
IG= 100μA (Note1, 2)
Turn-ON Delay Time (Note 1)
Rise Time
VDS=30V, VGS=10V, ID=0.5A,
RG=25ꢀ (Note1, 2)
70
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
124
60
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
IS
ISM
VSD
trr
4.0
16
A
A
Drain-Source Diode Forward Voltage (Note 1)
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
IS=4.0A, VGS=0V
IS=4.0A, VGS=0V,
dIF/dt=100A/µs
1.4
V
590
4.2
ns
µC
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R205-326.A
www.unisonic.com.tw
