4N90-C
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=250μA
900
V
VDS=900V, VGS=0V
VGS=±30V, VDS=0V
10
μA
IGSS
±10 μA
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
3.0
5.0
3.5
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS=10V, ID=2.0A
Ω
CISS
COSS
CRSS
850
95
pF
pF
pF
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate-Source Charge
10
QG
QGS
QGD
tD(ON)
tR
16
6
nC
nC
nC
ns
ns
ns
ns
VDS=100V, VGS=10V, ID=4A
IG=1mA (Note 1, 2)
Gate-Drain Charge
4
Turn-On Delay Time (Note 1)
Turn-On Rise Time
14
17
70
32
VDD=100V, VGS=10V, ID =4A,
RG =25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
4
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
16
Drain-Source Diode Forward Voltage (Note 1)
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
VSD
trr
IS=4.0A, VGS=0V
IS=4.0A, VGS=0V,
dIF/dt=100A/µs
1.4
V
520
4.4
nS
μC
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
4 of 9
QW-R205-347.E
www.unisonic.com.tw
